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    12101C105KAT Price and Stock

    Kyocera AVX Components 12101C105KAT2A

    CAP CER 1UF 100V X7R 1210
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    DigiKey 12101C105KAT2A Digi-Reel 146,054 1
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    12101C105KAT2A Cut Tape 146,054 1
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    12101C105KAT2A Reel 145,000 1,000
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    Avnet Americas 12101C105KAT2A Ammo Pack 13 Weeks, 3 Days 1
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    Mouser Electronics 12101C105KAT2A 45,556
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    Newark 12101C105KAT2A Reel 21,000 1,000
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    12101C105KAT2A 1,070 9
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    Quest Components 12101C105KAT2A 1,100
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    12101C105KAT2A 960
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    TME 12101C105KAT2A 1
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    Velocity Electronics 12101C105KAT2A 11
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    Chip 1 Exchange 12101C105KAT2A 1,176
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    Chip1Stop 12101C105KAT2A 482,000
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    Kyocera AVX Components 12101C105KAT4A

    CAP CER 1UF 100V X7R 1210
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    DigiKey 12101C105KAT4A Cut Tape 20,765 1
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    12101C105KAT4A Digi-Reel 20,765 1
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    12101C105KAT4A Reel 15,000 5,000
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    12101C105KAT4A Reel 12 Weeks 5,000
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    Mouser Electronics 12101C105KAT4A 12,632
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    Kyocera AVX Components 12101C105KAT9A

    Capacitor, ceramic,1Uf,100Vdc,10-% Tol,10+% Tol, x7R-Tc Code,-15,15%-Tc Rohs Compliant: Yes |Kyocera Avx 12101C105KAT9A
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    Newark 12101C105KAT9A Bulk 10,000
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    N/A 12101C105KAT2A

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    Bristol Electronics 12101C105KAT2A 516
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    Kyocera AVX Components KGM32LR72A105KU

    Multilayer Ceramic Capacitors MLCC - SMD/SMT KGM32LR72A105KU NEW GLOBAL PN 100V 1uF X A 581-KGM32LR72A105KU
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    TTI KGM32LR72A105KU Reel 182,000 1,000
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    Find more 12101C105KAT price and stock on Findchips.com

    12101C105KAT Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12101C105KAT2A AVX X7R Dielectric Capacitor Original PDF
    12101C105KAT2A AVX CAP 1UF 100V 10% X7R SMD-1210 TR-7 PLATED-NI/SN Original PDF
    12101C105KAT4A AVX Capacitors - Ceramic Capacitors - CAP CER 1UF 100V X7R 1210 Original PDF
    12101C105KAT7A AVX X7R Dielectric Capacitor Original PDF
    12101C105KAT9A AVX X7R Dielectric Capacitor Original PDF

    12101C105KAT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fairchild diode aa14

    Abstract: No abstract text available
    Text: MAX5980 Evaluation Kit Evaluates: MAX5980 General Description The MAX5980 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board featuring an Ethernet 4-port power-sourcing equipment (PSE) circuit for -48V or -54V supply rail systems. The IEEEM 802.3af/


    Original     		PDF MAX5980 MAX5980 32-pin fairchild diode aa14

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Untitled

    Abstract: No abstract text available
    Text: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%


    Original     		PDF NPTB00004A NPTB00004 NPTB00004A NDS-036

    GA352QR7GF102K

    Abstract: ERJ8BQFR25V schottky diode N9 SOD-123 smb schottky diode s4 D2212A r56 magnetic usb readbyte writebyte HFJ24-MAX2E RJ-45 poe ethernet OPTICAL COUPLER
    Text: 19-4026; Rev 0; 2/08 MAX5952A Evaluation Kit/Evaluation System Order the MAX5952AEVCMAXQU for a complete PCbased evaluation of the MAX5952A. Order the MAX5952AEVKIT if you already have a CMAXQUSB interface board or do not require PC-based evaluation of the MAX5952A.


    Original     		PDF MAX5952A MAX5952AEVCMAXQU MAX5952A. MAX5952AEVKIT Pre-802 750mA/Port) RJ-45 10/100BASE-TX GA352QR7GF102K ERJ8BQFR25V schottky diode N9 SOD-123 smb schottky diode s4 D2212A r56 magnetic usb readbyte writebyte HFJ24-MAX2E RJ-45 poe ethernet OPTICAL COUPLER

    schematic diagram 48v battery charger lead acid

    Abstract: 2sd2704
    Text: LT8490 High Voltage, High Current Buck-Boost Battery Charge Controller with Maximum Power Point Tracking MPPT Description Features VIN Range: 6V to 80V n V BAT Range: 1.3V to 80V n Single Inductor Allows V Above, Below, or Equal IN to VBAT n Automatic MPPT for Solar Powered Charging


    Original     		PDF LT8490 100kHz 400kHz 64-Lead 12063C105KAT2A LT3652/LT3652HV LT3652) LTC4000-1 LTC4020 com/LT8490 schematic diagram 48v battery charger lead acid 2sd2704

    transistor manual substitution

    Abstract: 0838-1X1T-W7 0838-1X1T LTC4274 MAGJACK application pcb DC1567 DC1567A Single Port Midspan Power Injector user manual all transistor manual substitution Diode Rectifier S1B-E3 1A, 100V, SMA
    Text: DEMO MANUAL DC1567A LTC4274: Single Port IEEE802.3at PSE DESCRIPTION Demonstration circuit 1567A features the LTC4274, a single power sourcing equipment PSE controller designed for use in IEEE 802.3 Type 1 and Type 2 (high power) compliant Power over Ethernet (PoE) systems. The LTC4274 is


    Original     		PDF DC1567A LTC4274: IEEE802 LTC4274, LTC4274 DC1567A DC1567A. dc1567af transistor manual substitution 0838-1X1T-W7 0838-1X1T MAGJACK application pcb DC1567 Single Port Midspan Power Injector user manual all transistor manual substitution Diode Rectifier S1B-E3 1A, 100V, SMA

    ATC 600F

    Abstract: NPTB00004 transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF AD-015 Nitron
    Text: AD-015 AD-015 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.1 to 5.2GHz Application design AD-015 with a Nitronex NPTB00004 GaN HEMT device has approximately 29dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 11dB gain with 23% drain efficiency at 2.5% EVM


    Original     		PDF AD-015 AD-015 NPTB00004 29dBm 150mA. 100ma AD-015: ATC 600F transistors ND C9 GRM188R72A104KA35D ERJ2GE0R00X 01UF 100UF 10UF Nitron

    solar charger schematic 12V

    Abstract: LT1636 equivalent
    Text: Electrical Specifications Subject to Change LT8490 High Voltage, High Current Buck-Boost Battery Charge Controller with Maximum Power Point Tracking MPPT Description Features VIN Range: 6V to 80V n V BAT Range: 1.3V to 80V n Single Inductor Allows V Above, Below, or Equal


    Original     		PDF LT8490 100kHz 400kHz 64-Lead 12063C105KAT2A LT3652/LT3652HV LT3652) LTC4000-1 LTC4020 com/LT8490 solar charger schematic 12V LT1636 equivalent

    PIMD3

    Abstract: No abstract text available
    Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz


    Original     		PDF NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 PIMD3

    poe splitter circuit

    Abstract: MAGJACK application pcb MAX5971A MAX5971 RJ45 lan female jack atmel 748 08261X1TGH-F 0826-1X1T
    Text: 19-5783; Rev 0; 3/11 MAX5971B Evaluation Kit Evaluates: MAX5971B General Description The MAX5971B evaluation kit EV kit is a fully assembled and tested surface-mount PCB featuring an Ethernet single-port power-sourcing equipment (PSE) circuit for -54V supply rail systems. The IEEEM 802.3af/at-compliant


    Original     		PDF MAX5971B MAX5971B 28-pin poe splitter circuit MAGJACK application pcb MAX5971A MAX5971 RJ45 lan female jack atmel 748 08261X1TGH-F 0826-1X1T

    ATC 600F

    Abstract: NPTB00004 AD-016 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf
    Text: AD-016 AD-016 Nitronex NPTB00004 GaN HEMT Power Transistors Application Board Tuned for 5.7 to 5.8GHz Application design AD-016 with a Nitronex NPTB00004 GaN HEMT device has approximately 27dBm average RF power under single carrier OFDM WiMax modulation1 and approximately 10dB gain with 23% drain efficiency at 2.5% EVM


    Original     		PDF AD-016 AD-016 NPTB00004 27dBm 150mA. 100ma AD-016: ATC 600F 100uf 16v murata tantalum GRM188R72A104KA35D 490-3285-2-ND ERJ2GE0R00X P033A 06031C103KAT2A Cer cap 100uf

    12062C103KAT2A

    Abstract: 06035G104ZAT2A 1812HC102KAT1A 70001410 12065C224KAT 06035C333KAT2A 04025A180JAT2A 06031A221JAT2A 0402YC223KAT2A 12065C104JAT
    Text: 1764-2012:QuarkCatalogTempNew 9/11/12 10:47 AM Page 1764 TEST & MEASUREMENT 21 Ceramic Chip Capacitors RoHS Multilayer ceramic capacitors are available in both Class I and Class II formulations. Temperature compensating formulations are Class I and temperature stable and


    Original     		PDF pF-22 12061A470JAT2A 06031A560JAT2A 08051A560JAT2A 08051A680JAT2A 06031A820JAT2A 06031A101FAT2A 06031A101JAT2A 06031A101KAT2A 08051A10102 12062C103KAT2A 06035G104ZAT2A 1812HC102KAT1A 70001410 12065C224KAT 06035C333KAT2A 04025A180JAT2A 06031A221JAT2A 0402YC223KAT2A 12065C104JAT

    GRM188R61C105KA

    Abstract: MA2J11200L keihin smd 414 MELF SMD8 DPA424G tv nei schematics DER-112 DPA423G MMBTA56LT1
    Text: Design Example Report 20 W and 30 W Boost Converters with Constant Current Output using DPA423G and DPA424G Title Input: 24 VDC Specification Board #1 Output: 40 V / 500 mA CC Board #2 Output: 60 V / 500 mA CC Application LED RGB Backlight for LCD TV Author


    Original     		PDF DPA423G DPA424G DER-112 DPA423 DPA424 GRM188R61C105KA MA2J11200L keihin smd 414 MELF SMD8 DPA424G tv nei schematics DER-112 DPA423G MMBTA56LT1

    ETH1-460L

    Abstract: SMBJ64A
    Text: DEMO MANUAL DC1814A LTC4274A Single LTPoE+ PSE Controller Description Demonstration circuit 1814A features the LTC 4274A, single port power sourcing equipment PSE controller, capable of delivering up to 90W of LTPoE+ power to a compatible LTPoE+ powered device (PD). A proprietary


    Original     		PDF DC1814A LTC4274A LTC4274. dc1814afc ETH1-460L SMBJ64A

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    GRM188R72A104KA35D

    Abstract: GaN Bias 25 watt NPTB00025 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019
    Text: AD-001 AD-001: Nitronex NPTB00025 GaN HEMT Tuned for 2.11 to 2.17GHz Application board AD-001 with a Nitronex NPTB00025 GaN HEMT device outputs approximately 3 Watts of average RF power under single carrier WCDMA modulation1 with approximately 12.5.0 dB gain, 30+% drain efficiency and an ACPR better then 35dBc. All measurements were collected at 2.11 to 2.17GHz with a drain bias of


    Original     		PDF AD-001 AD-001: NPTB00025 17GHz AD-001 35dBc. 17GHz 250mA. GRM188R72A104KA35D GaN Bias 25 watt 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019

    AD-009

    Abstract: ad009 NPTB00004 12101C105KAT2A ATC600F330B smd cap Cer cap 100uf ERJ-6BWJR033W AD009 smd CAP 27pf 100v 1 0603
    Text: AD-009 AD-009: Nitronex NPTB00004 GaN HEMT Tuned for 2.5 to 2.7GHz Driver Applications Application board AD-009 with a Nitronex NPTB00004 GaN HEMT device outputs approximately 29dBm of average RF power under single carrier OFDM WiMAX modulation1 and approximately 12.5dB gain with 22% drain efficiency at 2.5% EVM


    Original     		PDF AD-009 AD-009: NPTB00004 AD-009 29dBm 150mA. 150ma ad009 12101C105KAT2A ATC600F330B smd cap Cer cap 100uf ERJ-6BWJR033W AD009 smd CAP 27pf 100v 1 0603

    ATC100B101JW500X

    Abstract: CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B NPT1007 DTA183 RES2512 ELXY630ELL271MK25S
    Text: AD-014 AD-014: Nitronex NPT1007 GaN HEMT Tuned for 500-1000 MHz Application design AD-014 with one half of a Nitronex NPT1007 GaN HEMT device outputs approximately 50 Watts of average RF power under CW conditions with approximately 9.0 to 14 dB gain, 50% drain efficiency. All measurements were collected


    Original     		PDF AD-014 AD-014: NPT1007 AD-014 1000MHz 700mA. APB08-132 ATC100B101JW500X CAP1206 RES1210 ATC100B2R0GW500X 12061C103KAT2A ATC100B DTA183 RES2512 ELXY630ELL271MK25S

    nptb00004

    Abstract: NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100
    Text: NPTB00004 Datasheet Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz


    Original     		PDF NPTB00004 2500MHz EAR99 6000MHz 2500MHz, NDS-002 NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100

    CTX03-18842-R

    Abstract: MAX5974C B2100-13-F MAGJACK rj45 connector GA355QR7GF222KW awp top mark MAX5974CETE CTX0318842
    Text: 19-5262; Rev 0; 11/11 MAX5974C Evaluation Kit Evaluates: MAX5974C General Description The EV kit features a galvanically isolated 25W, 250kHz switching-frequency, active-clamped, synchronous-rectified forward DC-DC converter using the IC. The device circuit achieves high efficiency up to 93.5% using a


    Original     		PDF MAX5974C MAX5974C 250kHz MAX5969B Products10 CTX03-18842-R B2100-13-F MAGJACK rj45 connector GA355QR7GF222KW awp top mark MAX5974CETE CTX0318842

    GA352QR7GF102K

    Abstract: NEC B1100 MAX5020 poe splitter circuit HFJ24-MAX2E INTEL 40 pin ICs RJ-45 poe ethernet schottky diode N9 SOD-123 smb schottky diode s4
    Text: 19-4026; Rev 0; 2/08 MAX5952A Evaluation Kit/Evaluation System Order the MAX5952AEVCMAXQU for a complete PCbased evaluation of the MAX5952A. Order the MAX5952AEVKIT if you already have a CMAXQUSB interface board or do not require PC-based evaluation of the MAX5952A.


    Original     		PDF MAX5952A MAX5952AEVCMAXQU MAX5952A. MAX5952AEVKIT Pre-802 750mA/Port) RJ-45 10/100BASE-TX GA352QR7GF102K NEC B1100 MAX5020 poe splitter circuit HFJ24-MAX2E INTEL 40 pin ICs RJ-45 poe ethernet schottky diode N9 SOD-123 smb schottky diode s4

    EIA 549 Class 130B transformer

    Abstract: mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR
    Text: ND3% BASE1 XXXX0118-0396-1-P 396 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 20-07-11 Hour: 11:09 TS:TS date TS time CAPACITORS Find Datasheets Online CERAMIC CAPACITORS MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF 2 MULTILAYER CERAMIC CAPACITORS - 0.5pF TO 82,000pF CONT.


    Original     		PDF 000pF 000pF 0201ZD103KAT2A 0201ZC103KAT2A 0201YC101KAT2A 0201YC271KAT2A 0201YC471KAT2A 02013A1R0CAT2A 02013A4R7CAT2A 02013A100JAT2A EIA 549 Class 130B transformer mcf 300.04 capacitor 225 35k 844 SMD av 1.40.00 mkt x2 .01uf NTC 20K honeywell 1000 rpm dc motor 12v 100watt BO 680Y clarostat POTENTIOMETER 73JA SMD MARKING CODE 503b 03028BR

    12101C105KAT

    Abstract: No abstract text available
    Text: M.S. KENNEDY CORPORATION 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: 315 701-6751 | FAX: (315) 701-6752 MSK Web Site: http://www.mskennedy.com/ Application Note 015 MSK5053RH Eval Board User's Guide By Bob Abel & Paul Musil, MS Kennedy Corp.; Revised 10/16/2013


    Original     		PDF MSK5053RH 400KHz 100uA, 150pF 015uF 2000pF MSK5053RH 12101C105KAT 08051C104KAT 12101C105KAT

    Untitled

    Abstract: No abstract text available
    Text: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%


    Original     		PDF NPTB00004A NPTB00004 NPTB00004A NDS-036