PIMD3
Abstract: No abstract text available
Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz
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Original
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PDF
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NPTB00004
2500MHz
EAR99
6000MHz
2500MHz,
NDS-002
PIMD3
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nptb00004
Abstract: NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100
Text: NPTB00004 Datasheet Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz
|
Original
|
PDF
|
NPTB00004
2500MHz
EAR99
6000MHz
2500MHz,
NDS-002
NPTB00004DT
NPTB00004D
250v m1
APP-NPTB00004-25
NPTB00004DR
NBD-012
0J100
j105 250v
j105100
|
PIMD3
Abstract: No abstract text available
Text: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz
|
Original
|
PDF
|
NPTB00004
2500MHz
EAR99
6000MHz
2500MHz,
NDS-002
PIMD3
|