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    120N25 Search Results

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    Rochester Electronics LLC UPD120N25T1B-E1-AZ

    IC REG LINEAR FIXED LDO REG
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    DigiKey UPD120N25T1B-E1-AZ Bulk 179,839 854
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    Littelfuse Inc IXFX120N25P

    MOSFET N-CH 250V 120A PLUS247-3
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    DigiKey IXFX120N25P Tube 600 1
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    Newark IXFX120N25P Bulk 300
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    ROHM Semiconductor RDN120N25

    MOSFET N-CH 250V 12A TO220FN
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    DigiKey RDN120N25 Bulk 500
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    IXYS Corporation IXFK120N25

    MOSFET N-CH 250V 120A TO264AA
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    DigiKey IXFK120N25 Tube 25
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    Mouser Electronics IXFK120N25
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    IXYS Corporation IXTN120N25

    MOSFET N-CH 250V 120A SOT227B
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    DigiKey IXTN120N25 Tube 10
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    120N25 Datasheets Context Search

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    120N25

    Abstract: ID104
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFX 120N25 IXFK 120N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 120 A Ω = 22 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		120N25 ID104 247TM 728B1 120N25 ID104 PDF

    120N25

    Abstract: SiEMENS EC 350 98 0
    Text: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS


    Original     		120N25 120N25 SiEMENS EC 350 98 0 PDF

    4525G

    Abstract: ISOPLUS247
    Text: PolarHTTM HiPerFET IXFR 120N25P Power MOSFET VDSS = 250 V ID25 = 61 A Ω RDS on = 27 mΩ Electrically Isolated Tab N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		120N25P 4525G ISOPLUS247 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHTTM Power MOSFET VDSS ID25 IXTK 120N25P IXTX 120N25P RDS on = 250 V = 120 A Ω = 24 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		120N25P 120N25P O-264 PLUS247 065B1 728B1 123B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM Power MOSFET IXTK 120N25P VDSS ID25 RDS on = 250 V = 120 A Ω = 24 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25


    Original     		120N25P O-264 065B1 728B1 123B1 728B1 PDF

    PLUS247

    Abstract: IXFX120N25P
    Text: PolarHTTM HiPerFET Power MOSFET IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS on = trr < 250 V 120 A Ω 24 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V VDGR TJ = 25°C to 175°C; RGS = 1 MΩ 250


    Original     		120N25P O-264 PLUS247 PLUS247 IXFX120N25P PDF

    120N25

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 22 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		120N25 728B1 120N25 PDF

    120N25

    Abstract: No abstract text available
    Text: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS


    Original     		120N25 728B1 120N25 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS


    Original     		120N25 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 22 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ


    Original     		120N25 O-264 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS


    Original     		120N25 728B1 PDF

    5080S

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHTTM HiPerFET Power MOSFET IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS on = trr < 250 V 120 A Ω 24 mΩ 200 ns N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		120N25P 120N25P O-264 PLUS247 5080S PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET IXTK 120N25P VDSS = 250 V ID25 = 120 A RDS on ≤ 24 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 250 250 V V VGS VGSM


    Original     		120N25P 26ulombs PDF

    120N25P

    Abstract: PLUS247
    Text: PolarHTTM HiPerFET Power MOSFET VDSS = 250 V ID25 = 120 A Ω RDS on ≤ 24 mΩ ≤ 200 ns trr IXFK 120N25P IXFX 120N25P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 250 V


    Original     		120N25P 70oCoulombs 120N25P PLUS247 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF