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    120N15P Search Results

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    120N15P Price and Stock

    Littelfuse Inc IXFH120N15P

    MOSFET N-CH 150V 120A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH120N15P Tube 1,405 1
    • 1 $10.66
    • 10 $10.66
    • 100 $6.34367
    • 1000 $5.00651
    • 10000 $5.00651
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    Newark IXFH120N15P Bulk 300
    • 1 -
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    • 100 -
    • 1000 $5.25
    • 10000 $5.25
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    RS IXFH120N15P Bulk 8 Weeks 30
    • 1 -
    • 10 -
    • 100 $7.74
    • 1000 $7.74
    • 10000 $7.74
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    New Advantage Corporation IXFH120N15P 180 1
    • 1 -
    • 10 -
    • 100 $7.8
    • 1000 $7.28
    • 10000 $7.28
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    Littelfuse Inc IXTT120N15P

    MOSFET N-CH 150V 120A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT120N15P Tube 415 1
    • 1 $12.34
    • 10 $12.34
    • 100 $7.43467
    • 1000 $6.05975
    • 10000 $6.05975
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    Newark IXTT120N15P Bulk 300
    • 1 -
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    • 1000 $6.35
    • 10000 $6.35
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    Littelfuse Inc IXTQ120N15P

    MOSFET N-CH 150V 120A TO3P
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    DigiKey IXTQ120N15P Tube 300
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    • 1000 $4.70873
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    Newark IXTQ120N15P Bulk 300
    • 1 -
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    • 1000 $4.94
    • 10000 $4.94
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    Littelfuse Inc IXFT120N15P

    MOSFET N-CH 150V 120A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFT120N15P Tube 300
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    • 1000 $6.18273
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    Newark IXFT120N15P Bulk 300
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    RS IXFT120N15P Bulk 8 Weeks 30
    • 1 -
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    • 100 $9.56
    • 1000 $9.56
    • 10000 $9.56
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    IXYS Corporation IXFH120N15P

    MOSFETs 120 Amps 150V 0.016 Rds
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    Mouser Electronics IXFH120N15P 461
    • 1 $9.25
    • 10 $8.34
    • 100 $5.79
    • 1000 $5.01
    • 10000 $5.01
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    TTI IXFH120N15P Tube 60 30
    • 1 -
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    • 100 $5.56
    • 1000 $5.01
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    TME IXFH120N15P 223 1
    • 1 $9.04
    • 10 $6.78
    • 100 $6.12
    • 1000 $5.42
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    Find more 120N15P price and stock on Findchips.com

    120N15P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS = ID25 = RDS on ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150


    Original     		120N15P O-268 PDF

    4900 SIEMENS

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Maximum Ratings TO-3P (IXTQ) Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		120N15P 4900 SIEMENS PDF

    120N15P

    Abstract: No abstract text available
    Text: IXTQ 120N15P IXTT 120N15P PolarHTTM Power MOSFET VDSS = ID25 = RDS on ≤ 150 V 120 A Ω 16 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM


    Original     		120N15P O-268 120N15P PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		120N15P PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS = 150 V ID25 = 120 A Ω RDS on ≤ 17 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		120N15P PDF

    IXFH120N15P

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original     		120N15P IXFH120N15P PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF