Si2302ADS
Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A MARKING CODE
Text: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC
|
Original
|
PDF
|
Si2302ADS
2002/95/EC
O-236
OT-23)
Si2302ADS-T1-E3
Si2302ADS-T1-GE3
11-Mar-11
2A MARKING CODE
|
Untitled
Abstract: No abstract text available
Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
PDF
|
SiR166DP
2002/95/EC
SiR166DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
SiR862DP
2002/95/EC
SiR862DP-T1-GE3
18-Jul-08
|
Si7141
Abstract: Si7141DP-T1-GE3 Si7141DP
Text: New Product Si7141DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0019 at VGS = - 10 V - 60d 0.0030 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si7141DP
2002/95/EC
Si7141DP-T1-GE3
18-Jul-08
Si7141
|
Untitled
Abstract: No abstract text available
Text: SUD50P04-08 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0081 at VGS = - 10 V - 50d 0.0117 at VGS = - 4.5 V - 48d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
SUD50P04-08
2002/95/EC
O-252
SUD50P04-08-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiB488DK Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.020 at VGS = 4.5 V 9 0.024 at VGS = 2.5 V 9 0.029 at VGS = 1.8 V 9 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
SiB488DK
SC-75
2002/95/EC
SC-75-6L-Single
SiB488DK-T1-GE3
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
SiR862DP
2002/95/EC
SiR862DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
XD1001-BD-EV1
Abstract: DM6030HK TS3332LD XD1001-BD XD1001-BD-000V XD1001
Text: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier D1001-BD January 2010 - Rev 11-Jan-10 Features Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
|
Original
|
PDF
|
D1001-BD
11-Jan-10
MIL-STD-883
l01-BD-000V
XD1001-BD-EV1
XD1001-BD
XD1001-BD-EV1
DM6030HK
TS3332LD
XD1001-BD-000V
XD1001
|
Si2302ADS
Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3
Text: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC
|
Original
|
PDF
|
Si2302ADS
2002/95/EC
O-236
OT-23)
Si2302ADS-T1-E3
Si2302ADS-T1-GE3
18-Jul-08
|
sir166
Abstract: 4558 m 4558 4558 C AN609 305510
Text: SiR166DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
SiR166DP
AN609,
11-Jan-10
sir166
4558
m 4558
4558 C
AN609
305510
|
Si2323CDS
Abstract: No abstract text available
Text: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
PDF
|
Si2323CDS
2002/95/EC
O-236
OT-23)
Si2323CDS-T1-GE3
18-Jul-08
|
AN609
Abstract: SiA433EDJ
Text: SiA433EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
|
Original
|
PDF
|
SiA433EDJ
AN609,
11-Jan-10
AN609
|
Untitled
Abstract: No abstract text available
Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
PDF
|
SiR166DP
2002/95/EC
SiR166DP-T1-GE3
18-Jul-08
|
Untitled
Abstract: No abstract text available
Text: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
PDF
|
Si2323CDS
2002/95/EC
O-236
OT-23)
Si2323CDS-T1-GE3
18-Jul-08
|
|
|
sir166
Abstract: SiR166DP
Text: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
|
Original
|
PDF
|
SiR166DP
2002/95/EC
SiR166DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
sir166
|
Untitled
Abstract: No abstract text available
Text: New Product SiA778DJ Vishay Siliconix N-Channel 12 V and 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel 1 12 Channel 2 20 RDS(on) (Ω) 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.225 at VGS = - 4.5 V 0.270 at VGS = - 2.5 V
|
Original
|
PDF
|
SiA778DJ
SC-70-6
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
SUD50P04-08
Abstract: No abstract text available
Text: SUD50P04-08 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A) 0.0081 at VGS = - 10 V - 50d 0.0117 at VGS = - 4.5 V - 48d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
SUD50P04-08
2002/95/EC
O-252
SUD50P04-08-GE3
18-Jul-08
SUD50P04-08
|
Untitled
Abstract: No abstract text available
Text: Z C H N G .N r. MASSE IN mm - C-160337-D EINZELMASSE NICHT MASSTÄBLICH DESCRIPTION LTR ¡2*6,4 FÜR M6 B1 BOLZEN DATE 11JAN10 REVISED PER ECO-10-000445 DWN APVD KK HMR 1 ISOl.02,5-3,5 BESTELL NS MATERIAL OBERFLÄCHE MESSING. BLANK 160337-1 160337-2 ; : MESSING VERZINNT.
|
OCR Scan
|
PDF
|
C-160337-D
ECO-10-000445
11JAN10
C-160337-D
|
modular jack RJ45 8P8C
Abstract: JACK RJ45 8P8C RJ45 8P8C TYCO 8P8C jack rj45 5-1734324-3 8P8C RJ45 LED rj45 jack 8P8C 4-1734324-3 RJ45 amp
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ALL RIGHTS BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST R E V IS IO N S RESERVED. p DESCRIPTION LTR APVD 14D EC 07 ECR—07—028576 REVISED PER ECO-10-000445 A1 DWN DATE KK AEG 11JAN10 X < > I_
|
OCR Scan
|
PDF
|
ECO-10-000445
14DEC07
11JAN10
27/xm
65/xm
04MAR2008
31MAR2000
modular jack RJ45 8P8C
JACK RJ45 8P8C
RJ45 8P8C
TYCO 8P8C
jack rj45
5-1734324-3
8P8C RJ45 LED
rj45 jack 8P8C
4-1734324-3
RJ45 amp
|
me 555 N
Abstract: No abstract text available
Text: TH I 5 DRAW I NG IS COPY RIGH T UNPUBLI SHED. R E L E A S E D 19 BY A MP FOR ALL INCORPORATED. P U B L I C A T IO N RIGH TS LOC . I 9 R E V I S I ONS D I ST DY R ES ER V ED . LTR 508 APVD KK AEG I - 2 . 5 ][ □ DWN 11JAN10 REVISED PER ECO-10-000445 0 1 +
|
OCR Scan
|
PDF
|
ECO-10-000445
11JAN10
3SEP04
9MAY94
me 555 N
|
Untitled
Abstract: No abstract text available
Text: 1 THS MW Mtt 15 UUFUBUSHHT OOPHWHT m tf n r m tO M C S OMWMWnOW. - r h e s ie r — REVISIO N S LDC ALL Riems HESBWH5T DW LTB HIE DESCRFIION DwJ 20FEB08 A REDRAW ECR-08-0029e9 A1 REVISED PER ECQ-10-000445 11JAN10 SC WK KK AEG TOP PANEL GROUND 21.35±0.25
|
OCR Scan
|
PDF
|
20FEB08
ECR-08-0029e9)
ECQ-10-000445
11JAN10
31I4W2000
X280m
|
6278349-8
Abstract: No abstract text available
Text: TH I S DRAW I NG £ l IS UNPUBLI S HE D. C O P Y RI G HT 19 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION R 1G H T S LOC CE RESERVED. REV I S IONS D I ST 00 LTR RELEASE A1 A MATERIAL: HOUSING: DIECAST ZINC, NICKEL PLATED AL I G N M E N T S L E E V E : S E E DASH N O ' S
|
OCR Scan
|
PDF
|
PEI-GE30,
ECO-10-000445
07JUN2Ã
11JAN10
2-56UNC-2B,
17MAY
MAR2000
6278349-8
|
J293
Abstract: No abstract text available
Text: NOTES 2.057 typ [.0 8 1 TYPJ 0.38¿0.13 TYP C. 01 5 ± . 0 0 5 1 TYP} n o rsj in \ n a H \ CONNECTOR W IL L A C C E P T F L E X I B L E P R IN T E D C IR C U I T OR F L A T F L E X I B L E C A B LE ON 2 . 5 4 C . 1003 C ENTERS IN A T H IC K N E S S RANGE OF 0 . 1 2 7 TO 0 .3 8 1
|
OCR Scan
|
PDF
|
ECO-10-000445
ECR-06-04332
FRO00-0011-04
DY/EC/0784
19FEB04
TR10MATE
J293
|
Untitled
Abstract: No abstract text available
Text: 2 THIS £ l DRAWING IS UNPUBLISHED. C O P Y R I G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R|3 HT$ LOC RESERVED. REV I S I ONS D I ST 22 AA LTR DE S C R PTION DATE Al ECOS I 1- 0 2 0 1 - 04 REV PER E C R - 0 9 - 0 2 3 0 2 8 A2 REVISED PER ECO-10-000445
|
OCR Scan
|
PDF
|
ECO-10-000445
11JAN10
0013mm
09MAY2005
163APPL
MAR200Ü
|