Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIA778DJ Search Results

    SF Impression Pixel

    SIA778DJ Price and Stock

    Vishay Siliconix SIA778DJ-T1-GE3

    MOSFET 2N-CH 12V/20V 4.5A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA778DJ-T1-GE3 Digi-Reel 1
    • 1 $0.35
    • 10 $0.35
    • 100 $0.35
    • 1000 $0.35
    • 10000 $0.35
    		Buy Now
    SIA778DJ-T1-GE3 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SIA778DJ-T1-GE3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    SIA778DJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA778DJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 12V 4.5A SC70-6 Original PDF

    SIA778DJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    26.5938

    Abstract: 16503 AN609
    Text: SiA778DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiA778DJ AN609, CONFIGU091 05-Feb-10 26.5938 16503 AN609

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA778DJ Vishay Siliconix N-Channel 12 V and 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA778DJ 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA778DJ Vishay Siliconix N-Channel 12 V and 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel 1 12 Channel 2 20 RDS(on) (Ω) 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.225 at VGS = - 4.5 V 0.270 at VGS = - 2.5 V


    Original     		PDF SiA778DJ SC-70-6 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIA778DJ-T1-GE3

    Abstract: SC-70-6
    Text: New Product SiA778DJ Vishay Siliconix N-Channel 12 V and 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel 1 12 Channel 2 20 RDS(on) (Ω) 0.029 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.044 at VGS = 1.8 V 0.065 at VGS = 1.5 V 0.225 at VGS = - 4.5 V 0.270 at VGS = - 2.5 V


    Original     		PDF SiA778DJ SC-70 2002/95/EC 18-Jul-08 SIA778DJ-T1-GE3 SC-70-6