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    10A, 100V FAST RECOVERY DIODE Search Results

    10A, 100V FAST RECOVERY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    10A, 100V FAST RECOVERY DIODE Price and Stock

    onsemi MMBD1204

    Diode Ultra Fast Recovery Rectifier 100V 0.2A 3-Pin SOT-23 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MMBD1204 60,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0354
    		Buy Now

    Taitron Components Inc MMBD7000

    Diode Ultra Fast Recovery Rectifier 100V 0.2A 3-Pin SOT-23 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com MMBD7000 385
    • 1 $0.0254
    • 10 $0.0254
    • 100 $0.0254
    • 1000 $0.0254
    • 10000 $0.0216
    		Buy Now

    NTE Electronics Inc 1N914A

    Diode Ultra Fast Recovery Rectifier 100V 0.2A 2-Pin DO-35 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N914A 7
    • 1 $0.0623
    • 10 $0.0623
    • 100 $0.0623
    • 1000 $0.0566
    • 10000 $0.0432
    		Buy Now

    Microchip Technology Inc SBR60100

    Schottky Diode - 100V - 60A - Fast Recovery =< 500ns, > 200mA (Io) - 1mA @ 100V Reverse Leakage @ Vr - DO-5 Package - Stud Mount.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SBR60100
    • 1 -
    • 10 -
    • 100 $123.43
    • 1000 $123.43
    • 10000 $123.43
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    Microchip Technology Inc HSM8100J/TR13

    Schottky Diode - 100V - 8A - 780 mV @ 8 A Forward (Vf) (Max) @ If - Fast Recovery =< 500ns, > 200mA (Io) - DO-214AB - Surface Mount.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com HSM8100J/TR13
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.58
    • 10000 $2.04
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    Find more 10A, 100V FAST RECOVERY DIODE price and stock on Findchips.com

    10A, 100V FAST RECOVERY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    byv32

    Abstract: 10A, 100v fast recovery diode power Diode 200V 10A anode common fast recovery diode dual BYV32-200TMF 2A Fast Recovery Diodes DUAL DIODES COMMON ANODE TO220 to-276ab common anode fast to220 fast rectifier common anode
    Text: BYV32–50M0 BYV32–100M BYV32–150M BYV32–200M MECHANICAL DATA Dimensions in mm 4.6 0.8 0 .7 6 0 .0 3 0 m in . 1 0 .6 1 3 .5 16.5 3.6 Dia. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 1 3 .7 0 3 .6 0 (0 .1 4 2 ) M a x . 3 1 0 .6 9 (0 .4 2 1 )


    Original     		PDF BYV32 BYV32-200SMDCECC O276AB) BYV32-200TM BYV32-200TMF BYV32-200XM BYV32-50ASMD 10A, 100v fast recovery diode power Diode 200V 10A anode common fast recovery diode dual 2A Fast Recovery Diodes DUAL DIODES COMMON ANODE TO220 to-276ab common anode fast to220 fast rectifier common anode

    HUR1630CT

    Abstract: No abstract text available
    Text: HUR1630CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR1630CT Symbol VRRM V 300 Test Conditions IFRMS IFAVM TC=130oC; rectangular, d=0.5 IFSM


    Original     		PDF HUR1630CT O-220AB 130oC; 180uH 10kHz; HUR1630CT

    HUR830

    Abstract: No abstract text available
    Text: HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR830 Symbol VRRM V 300 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580


    Original     		PDF HUR830 O-220AC 130oC; HUR830

    600v 10A ultra fast recovery diode

    Abstract: HUR20100CT fast recovery diode 600v 12A HUR20120CT fast recovery diode 600v 5A
    Text: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM


    Original     		PDF HUR20100CT, HUR20120CT O-220AB HUR20100CT 115oC; 180uH 10kHz; 25oCg. 600v 10A ultra fast recovery diode HUR20100CT fast recovery diode 600v 12A HUR20120CT fast recovery diode 600v 5A

    HUR1060

    Abstract: 100v 20a fast recovery power diode 30v 10a smps
    Text: HUR1060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR1060 Symbol VRRM V 600 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580


    Original     		PDF HUR1060 O-220AC 135oC; HUR1060 100v 20a fast recovery power diode 30v 10a smps

    600v 10A ultra fast recovery diode

    Abstract: HUR10100 HUR10120
    Text: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G


    Original     		PDF HUR10100, HUR10120 O-220AC HUR10100 600v 10A ultra fast recovery diode HUR10100 HUR10120

    HUR830

    Abstract: 10A, 100v fast recovery diode
    Text: HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR830 Symbol VRRM V 300 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580


    Original     		PDF HUR830 O-220AC 130oC; HUR830 10A, 100v fast recovery diode

    HUR2060CT

    Abstract: No abstract text available
    Text: HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR2060CT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM


    Original     		PDF HUR2060CT O-220AB 135oC; 180uH 10kHz; HUR2060CT

    600v 10A ultra fast recovery diode

    Abstract: fast recovery diode 600v 12A HUR20100CT 10A, 100v fast recovery diode 10a ultra fast diode HUR20120CT fast recovery diode 600v 5A ultra fast recovery time diode
    Text: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM


    Original     		PDF HUR20100CT, HUR20120CT O-220AB HUR20100CT 180uH 10kHz; 54Dynamic 600v 10A ultra fast recovery diode fast recovery diode 600v 12A HUR20100CT 10A, 100v fast recovery diode 10a ultra fast diode HUR20120CT fast recovery diode 600v 5A ultra fast recovery time diode

    sonic cleaner

    Abstract: HUR2060CT
    Text: HUR2060CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR2060CT Symbol VRRM V 600 Test Conditions IFRMS IFAVM TC=135oC; rectangular, d=0.5 IFSM


    Original     		PDF HUR2060CT O-220AB 180uH 10kHz; sonic cleaner HUR2060CT

    HUR1630CT

    Abstract: No abstract text available
    Text: HUR1630CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR1630CT Symbol VRRM V 300 Test Conditions IFRMS IFAVM TC=130oC; rectangular, d=0.5 IFSM


    Original     		PDF HUR1630CT O-220AB 180uH 10kHz; HUR1630CT

    smps high power

    Abstract: HUR1060
    Text: HUR1060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 600 HUR1060 Symbol VRRM V 600 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580


    Original     		PDF HUR1060 O-220AC 135oC; smps high power HUR1060

    HUR830S

    Abstract: 10a ultra fast diode 5a ultra fast diode
    Text: HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263 D2PAK C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode VRSM V 300 HUR830S Symbol VRRM V 300 Test Conditions 1. 2. 3. 4. Gate Collector Emitter Collector


    Original     		PDF HUR830S O-263 HUR830S 10a ultra fast diode 5a ultra fast diode

    600v 10A ultra fast recovery diode

    Abstract: sonic cleaner HUR10100 HUR10120 fast recovery diode 600v 5A 600v 10A ultra fast recovery diode to-220ac ultra fast recovery time diode
    Text: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G


    Original     		PDF HUR10100, HUR10120 O-220AC HUR10100 600v 10A ultra fast recovery diode sonic cleaner HUR10100 HUR10120 fast recovery diode 600v 5A 600v 10A ultra fast recovery diode to-220ac ultra fast recovery time diode

    10a ultra fast diode

    Abstract: HUR830S
    Text: HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-263 D2PAK C(TAB) A C A NC A=Anode, NC= No connection, TAB=Cathode VRSM V 300 HUR830S Symbol VRRM V 300 Test Conditions 1. 2. 3. 4. Gate Collector Emitter Collector


    Original     		PDF HUR830S O-263 10a ultra fast diode HUR830S

    Untitled

    Abstract: No abstract text available
    Text: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss


    Original     		PDF AOTF10N50FD AOTF10N50FD AOTF10N50FDL O-220F

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    jrc 5532

    Abstract: jrc 5534 as4558 audio amplifier 4558 12v electronic transformer RECTIFIER 5532 JRC 4558 JRC JRC4558 bridge rectifier 12V 1A jrc 4558
    Text: NIEC’s SBD and FRED for Audio Nihon Inter Electronics Corporation NIEC is a major manufacturer of Schottky Barrier Diode (SBD) and Fast Recovery Epitaxial Diode (FRED). Thanks to low dissipation, fast switching, and low noise characteristics, these fast switching diodes are widely used in Switching Mode Power Supply (SMPS) all over the


    Original     		PDF FSQ05A04 jrc 5532 jrc 5534 as4558 audio amplifier 4558 12v electronic transformer RECTIFIER 5532 JRC 4558 JRC JRC4558 bridge rectifier 12V 1A jrc 4558

    k07n120

    Abstract: Q67040-S4280 PG-TO-247-3 SKW07N120
    Text: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:


    Original     		PDF SKW07N120 SKW07N120 k07n120 Q67040-S4280 PG-TO-247-3

    RF2001T2D

    Abstract: No abstract text available
    Text: RF2001T2D Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 5.0±0.2 ① 13.5MIN 1.2 Construction Silicon epitaxial planar


    Original     		PDF RF2001T2D O-220) O220FN 60Hz/1cyc) 200pF 100pF R1120A RF2001T2D

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Fast recovery diode RF2001T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery


    Original     		PDF RF2001T2D O-220) O220FN current25 200pF 100pF R1120A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET F S 1 O A S J -2 HIGH-SPEED SWITCHING USE FS1 OASJ-2 ' 4V DRIVE ' V d s s . ' rDS ON (MAX) . ' Id . ' Integrated Fast Recovery Diode (TYP.) . 100V . 0.190 .10A 95ns APPLICATION


    OCR Scan     		PDF

    10A, 100v fast recovery diode

    Abstract: No abstract text available
    Text: -Jülitron ra@ y Tr ©¿aim©« Devices. Inc. MEDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 Â Aluminum Cathode: Gold Polished silicon or “Chrome Nickel Silver" also available


    OCR Scan     		PDF 305mm) 18moe C-126 10A, 100v fast recovery diode

    75 ns 75

    Abstract: SOLITRON DEVICES
    Text: 8368602 SOLITRON DEVICES INC _ 9 5D ÌS Ä¥Ä L@(i 02917 D E|fl3bflt:D 2 D 7"- □ □ □ 2 CU 7 àJ - / ? □ | MEDIUM VOLTAGE, FAST RECOVERY Devices, Inc CHIP NUMBER PN EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000  Aluminum


    OCR Scan     		PDF 305mm) C-126 75 ns 75 SOLITRON DEVICES