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    DE475-102N21A

    Abstract: PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice
    Text: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE475-102N21A 30MHz DE475-102N21A PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice

    475102N2

    Abstract: 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21
    Text: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE475-102N21A 30MHz 475102N2 102n21 "RF MOSFETs" 1000 volt mosfet 400P DE475-102N21A volt21

    400P

    Abstract: DE475-102N21A
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-102N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE475-102N21A 30MHz 400P DE475-102N21A