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    Nisshinbo Micro Devices RP102N121D-TR-FE

    IC REG LINEAR 1.2V 300MA SOT23-5
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    DigiKey RP102N121D-TR-FE Cut Tape 2,028 1
    • 1 $0.91
    • 10 $0.649
    • 100 $0.5143
    • 1000 $0.44366
    • 10000 $0.44366
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    RP102N121D-TR-FE Digi-Reel 2,028 1
    • 1 $0.91
    • 10 $0.649
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    RP102N121D-TR-FE Reel 3,000
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    Mouser Electronics RP102N121D-TR-FE
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    Telemechanique Sensors XCKT2102N12

    SWITCH LIMIT DPDT 3A 240V
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    DigiKey XCKT2102N12 Box 2 1
    • 1 $129.87
    • 10 $107.52
    • 100 $91.95
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    Mouser Electronics XCKT2102N12 2
    • 1 $101.4
    • 10 $84.03
    • 100 $69.61
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    Newark XCKT2102N12 Bulk 1
    • 1 $142.51
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    • 100 $102.43
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    RS XCKT2102N12 Bulk 1 2 Weeks 1
    • 1 $103.68
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    TME XCKT2102N12 1
    • 1 $44.89
    • 10 $38.9
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    Telemechanique Sensors XCKP2102N12

    SWITCH LIMIT DPDT 3A 240V
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    DigiKey XCKP2102N12 Box 2 1
    • 1 $81.41
    • 10 $67.403
    • 100 $55.7879
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    Mouser Electronics XCKP2102N12 2
    • 1 $86.71
    • 10 $77.54
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    Newark XCKP2102N12 Bulk 1 1
    • 1 $95.64
    • 10 $81.29
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    RS XCKP2102N12 Bulk 3 Weeks 1
    • 1 $88.44
    • 10 $75.18
    • 100 $68.1
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    TME XCKP2102N12 2 1
    • 1 $25.63
    • 10 $22.21
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    Telemechanique Sensors XCKD2102N12

    SWITCH LIMIT DPDT 3A 240V
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    DigiKey XCKD2102N12 Box 2 1
    • 1 $87.73
    • 10 $72.633
    • 100 $60.375
    • 1000 $60.375
    • 10000 $60.375
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    Mouser Electronics XCKD2102N12
    • 1 $86.17
    • 10 $72.63
    • 100 $60.37
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    Newark XCKD2102N12 Bulk 1
    • 1 $93.57
    • 10 $80.41
    • 100 $67.25
    • 1000 $64.81
    • 10000 $64.81
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    RS XCKD2102N12 Bulk 2 3 Weeks 1
    • 1 $88.61
    • 10 $75.32
    • 100 $68.23
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    TME XCKD2102N12 1
    • 1 $63.67
    • 10 $55.17
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    Telemechanique Sensors XCPR2102N12

    SWITCH LIMIT DPST 3A 240V
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    DigiKey XCPR2102N12 Box 1
    • 1 $194.89
    • 10 $194.89
    • 100 $194.89
    • 1000 $194.89
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    Mouser Electronics XCPR2102N12
    • 1 $151.85
    • 10 $148.81
    • 100 $142.75
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    Newark XCPR2102N12 Bulk 1
    • 1 $150.65
    • 10 $139.94
    • 100 $121.59
    • 1000 $121.59
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    RS XCPR2102N12 Bulk 29 Weeks 1
    • 1 $153.37
    • 10 $153.37
    • 100 $153.37
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    TME XCPR2102N12 1
    • 1 $63.21
    • 10 $54.77
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    102N12 Datasheets Context Search

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    102N12

    Abstract: Directed Energy Directed 400P DE375-102N12A
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		DE375-102N12A 50MHz 102N12 Directed Energy Directed 400P DE375-102N12A PDF

    13.56MHZ 3KW GENERATOR

    Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A


    Original     		56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv PDF

    DE375-102N12A

    Abstract: 400P
    Text: DE375-102N12A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		DE375-102N12A 50MHz DE375-102N12A 400P PDF

    DE375-102N12A

    Abstract: PIN diode SPICE model 400P 102N12A
    Text: DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous


    Original     		DE375-102N12A 50MHz 2N12A DE375-102N12A PIN diode SPICE model 400P 102N12A PDF

    IXZ4DF12N100

    Abstract: DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier DEIC-515 RF Amplifier 500w 175 mhz
    Text: IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability


    Original     		IXZ4DF12N100 DEIC-515 DE375-102N12A 1000lvin IXZ4DF12N100 DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier RF Amplifier 500w 175 mhz PDF