smd code marking rac
Abstract: HYB3118160 HYB5118160 RAD SMD MARKING CODE
Text: 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 tRAC
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PDF
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16-Bit
5118160BSJ-50/-60
3118160BSJ-50/-60
HYB5118160
HYB3118160
P-TSOPII-50/44-1
GPX05958
smd code marking rac
HYB3118160
HYB5118160
RAD SMD MARKING CODE
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5118160
Abstract: HYB3118160 HYB5118160
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature
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Original
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PDF
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16-Bit
HYB5116160BSJ-50/-60
HYB3116160BSJ/BST
HYB3118160BSJ/BST
HYB5116160
HYB3116160
HYB5118160
HYB3118160
5118160
HYB3118160
HYB5118160
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5118160
Abstract: Q67100-Q1073 Q67100-Q1072 HYB5118160BSJ-50
Text: 1M x 16-Bit Dynamic RAM 1k-Refresh 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20
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PDF
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16-Bit
HYB5118160BSJ-50/-60/-70
5118160BSJ-50/-60/-70
16-DRAM
P-SOJ-42
GPJ05853
5118160
Q67100-Q1073
Q67100-Q1072
HYB5118160BSJ-50
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Untitled
Abstract: No abstract text available
Text: 2M x 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 Advanced Information • 2 097 152 words by 32-bit organization • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version)
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Original
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PDF
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32-Bit
322005S/GS-50/-60
L-SIM-72-10
GLS58332
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Untitled
Abstract: No abstract text available
Text: 1M x 32-Bit Dynamic RAM Module 2M × 16-Bit Dynamic RAM Module HYM 321000S/GS-50/-60 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)
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Original
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PDF
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32-Bit
16-Bit
321000S/GS-50/-60
16-bit)
32-Bit
L-SIM-72-10
GLS05833
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Untitled
Abstract: No abstract text available
Text: SIE M EN S 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50
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OCR Scan
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PDF
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16-Bit
5118160BSJ-50/-60
3118160BSJ-50/-60
HYB5118160
HYB3118160
3118160BSJ-50/-60
GPX05958
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5118160
Abstract: No abstract text available
Text: SIEM ENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Inform ation • • • 1 048 576 words by 16-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)
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OCR Scan
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16-Bit
5118160BSJ-50/-60/-70
W77//77/7/7,
///////////777A
235b05
0071SSb
5118160
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5118160
Abstract: AG71S 0071547 d0715 Q67100-Q1072 Q67100-Q1073 Q67100-Q1074
Text: SIEM ENS Olk -R e fiih DynamiC RAM HYB 5118160b s j -50/-60/-70 Advanced Inform ation 1 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle tim e RAS access time: 50 ns -50 version) 60 ns (-60 version) 70 ns (-70 version)
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OCR Scan
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5118160BSJ-50/-60/-70
16-bit
77/V///Ã
f77/////////,
235b05
DD71SSb
5118160
AG71S
0071547
d0715
Q67100-Q1072
Q67100-Q1073
Q67100-Q1074
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Untitled
Abstract: No abstract text available
Text: 5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description T he H itachi H M 5118160B I is a C M O S dynam ic R A M organized as 1,048,576-w ord x 16-bit. It em ploys the m ost advanced C M O S technology fo r high perform ance and low pow er. T he H M 5118160B I offers
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OCR Scan
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PDF
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HM5118160BI
1048576-word
16-bit
ADE-203-580A
5118160B
576-w
16-bit.
ns/70
ns/80
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 ¿RAC RAS access time 50 60 70 ns ¿CAC CAS access time 13
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OCR Scan
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PDF
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16-Bit
5118160BSJ-50/-60/-70
235b05
16-DRAM
a235bDS
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TC5118160B
Abstract: No abstract text available
Text: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • 5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT
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TC5118160BJ/BFT-60/70
5118160BJ/BFT
18160BJ/BFT
0D2fi367
TC5118160B
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TC5118160
Abstract: TC5118160B
Text: TOSHIBA 5118160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The TC 5118160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The TC 5118160BJ/BFT utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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OCR Scan
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TC5118160BJ/BFT-60/70
5118160BJ/BFT
18160BJ/BFT
B-127
TC5118160
TC5118160B
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5118160BSJ
Abstract: No abstract text available
Text: SIEMENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 'C operating temperature • Performance: -50 -60 -70 fRAC RAS access time 50 60 70 ^CAC CAS access time 13 15
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OCR Scan
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PDF
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16-Bit
5118160BSJ-50/-60/-70
5118160BSJ-50/-60/-70
16-DRAM
5118160BSJ
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 1M x 16-Bit Dynamic RAM 1 k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Inform ation • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:
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OCR Scan
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PDF
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16-Bit
5118160BSJ-50/-60
3118160BSJ-50/-60
HYB5118160
HYB3118160
102lastic
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 1 M X 1 6 - B it D y n a m ic R A M H Y B 5 1 1 8 1 6 0 B S J -5 0 /-6 0 /-7 0 1 k -R e fre s h A d v a n c e d In fo rm a tio n • 1 04 8 57 6 w o rd s by 16-bit o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re
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16-bit
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thv8
Abstract: HYB39S16800T 16m x 4 hyb
Text: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15
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L-SIM-72-12
324020S/GS
324025S/GS
L-SIM-72-15
328020S/GS
328025S/GS
364020S/GS
L-SIM-72-13
364035S/GS
thv8
HYB39S16800T
16m x 4 hyb
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SIEMENS BST h 05 90
Abstract: SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1 k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature
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OCR Scan
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PDF
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16-Bit
HYB5116160BSJ-50/-60
HYB3116160BSJ/BST
HYB3118160BSJ/BST
HYB5116160
HYB3116160
HYB5118160
HYB3118160
SIEMENS BST h 05 90
SIEMENS BST N 35
SIEMENS BST g 02 60
SIEMENS BST h 05 60
SIEMENS BST P
SIEMENS BST
SIEMENS BST h 05 110
SIEMENS BST l 45 90
160BS
SIEMENS BST G 03 60
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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5117400
Abstract: sem 2500 7212 tube
Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1
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OCR Scan
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PDF
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P-SOJ-26/20-1
J-26/20-5?
P-SOJ-28-2
P-SOJ-40-1
P-TSOPII-26/20-1
P-SOJ-26/24-1
1000BJ
514256BJ
514100BJ
514400BJ
5117400
sem 2500
7212 tube
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Q67100-Q2066
Abstract: edo simm 20.32 mm
Text: SIEMENS 2M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 • SIMM modules with 2 097 152 words by 32-bit organization for PC main memory application • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)
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OCR Scan
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PDF
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32-Bit
322005S/GS-50/-60
L-SIM-72-10
GLS58332
Q67100-Q2066
edo simm 20.32 mm
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SOJ42
Abstract: No abstract text available
Text: SIEMENS 1M X 32-Bit Dynamic RAM Module 2M X 16-Bit Dynamic RAM Module HYM 321000S/GS-50/-60 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)
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OCR Scan
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PDF
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32-Bit
16-Bit
321000S/GS-50/-60
16-bit)
321000S/GS-50/-60
32-Bit
SOJ42
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Untitled
Abstract: No abstract text available
Text: 5118160B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-476 Z Preliminary Rev. 0.0 Dec. 6, 1995 Description The Hitachi 5118160B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The 5118160B offers Fast Page
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OCR Scan
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PDF
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HM5118160B
1048576-word
16-bit
ADE-203-476
576-word
16-bit.
ns/70
ns/80
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hy5118160b
Abstract: WU33 HY5118160 D08-15 tcpt 200 HD-007 HY5118160BTC
Text: •HYUNDAI H Y 5 1 1 8 1 6 0 B S e r ie s 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The H 5118160B is the new generation and fast dynam ic RAM organized 1,048,576x 16-bit. The 5118160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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PDF
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16-bit
Y5118160B
16-bit.
HY5118160B
ia069
1AD54-10-MAY95
HY5118160BJC
HY5118160BSLJC
WU33
HY5118160
D08-15
tcpt 200
HD-007
HY5118160BTC
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BT 804
Abstract: No abstract text available
Text: SIEMENS Contents Page In tro d u c tio n .9 Sum m ary o f T ypes incl. ordering codes . 13
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OCR Scan
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PDF
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32-Bit
B166-H6993-X-7600,
BT 804
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