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    Kyocera AVX Components 100B150JP500XC100

    Silicon RF Capacitors / Thin Film 15PF 500V 5% 1111
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    Kyocera AVX Components 100B150JP500XTV

    Silicon RF Capacitors / Thin Film 500V 15pF Tol 5% Las Mkg Vertical
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    Kyocera AVX Components 100B150JP500XT

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    American Technical Ceramics Corp 100B150JP500X

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    100B150JP500X Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 MRF6S9045MR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF6S9060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9060 MRF6S9060NR1/NBR1. MRF6S9060MR1 MRF6S9060MBR1 MRF6S9060MR1

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S9070NR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR

    MRF6S9045MR1

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 2, 5/2006 Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S9045 MRF6S9045NR1/NBR1. MRF6S9045MR1 MRF6S9045MBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1

    KME63VB471M12x25LL

    Abstract: transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 MRF5S9150HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.


    Original     		PDF MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 KME63VB471M12x25LL transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HSR3

    UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet

    Untitled

    Abstract: No abstract text available
    Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE


    Original     		PDF

    uhf 150w mosfet

    Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
    Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S9070NR1 MRF5S9070MR1 MRF5S9070NR1

    KME63VB

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 0, 10/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160H KME63VB

    HVV1214-140

    Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
    Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain


    Original     		PDF HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB

    mode 5 IFF

    Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
    Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV1011-300 429-HVVi EG-01-DS02B EG-01-DS02B8 mode 5 IFF Coaxicom RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00

    AN1955

    Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR
    Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF5S9070NR1/D MRF5S9070NR1 AN1955 MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR

    MRF5S9150HSR3

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9150HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869


    Original     		PDF MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150HR3 MRF5S9150HSR3 A114 A115 AN1955 C101 JESD22

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 J-044
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6S9045N MRF6S9045NR1 MRF6S9045NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9045N MRF6S9045NBR1 J-044

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 0, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869


    Original     		PDF MRF5S9150H MRF5S9150HR3 MRF5S9150HSR3 MRF5S9150H

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160H

    MRF5S9070NR1

    Abstract: marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9070MR1 MRF5S9070NR1. MRF5S9070NR1 marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF5S9070NR1/D MRF5S9070NR1

    MRF5S9070N

    Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S9070NR1 MRF5S9070MR1 MRF5S9070N 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9060N MRF6S9060NBR1 MRF6S9060NR1 Lateral
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6S9060N MRF6S9060NR1 MRF6S9060NBR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S9060N MRF6S9060NBR1 Lateral

    GROUND BASED RADAR

    Abstract: transistor SMD R1D
    Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications


    Original     		PDF HVV1214-140 21DD1E) GROUND BASED RADAR transistor SMD R1D

    A114

    Abstract: A115 AN1955 C101 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9160HR3 MRF6S9160HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 MRF6S9160HR3 A114 A115 AN1955 C101 JESD22 MRF6S9160H MRF6S9160HSR3

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S9060 MRF6S9060MBR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9060 Rev. 1, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF6S9060 MRF6S9060NR1 MRF6S9060NBR1 MRF6S9060MR1 MRF6S9060MBR1 A113 A114 A115 C101 JESD22 MRF6S9060 MRF6S9060MBR1