Untitled
Abstract: No abstract text available
Text: SMA SPECIFICATIONS MATERIAL COAXICOM SMA CONNECTORS are manufactured to have excellent performance up to 18 GHz. The pages that follow include types that are used on coaxial cable flexible , Ultra-Flex and semi-rigid , as launchers into stripline or microstrip, or as receptacles
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MIL-PRF-39012.
3115B-1
3115EM-1
3115EM-1-1
3114P-1
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Untitled
Abstract: No abstract text available
Text: 75 Ω SCREW-ON & SNAP-ON SPECIFICATIONS COAXICOM 75 Ω connectors are designed to provide a well-matched system impedance for critical telecommunication and CATV applications. They are available in both a Snap-On configuration with an interface similar to but larger than
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6705F-75-1
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UHF TRANSISTOR
Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0405-175
429-HVVi
EG-01-DS10B
05/XX/09
UHF TRANSISTOR
J152-ND
J151-ND
RF MOSFET CLASS AB
Coaxicom
transistor SMD g 28
100B100JP500X
RC1206JR-07100KL
smd transistor 259
4404 mosfet
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Untitled
Abstract: No abstract text available
Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE
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uhf 150w mosfet
Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0912-150
121eliable.
EG-01-DS11A
or429-HVVi
uhf 150w mosfet
10uF CAPACITOR 1210 PACKAGE
capacitor 10uF/63V
smd transistor EK
10uf 63v capacitor
50V 1215MHZ
banana socket datasheet
capacitor 220uF/63V
diode gp 429
DS2346
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PDF
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HVV1214-140
Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain
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HVV1214-140
429-HVVi
EG-01-PO22X1
HVV1214-140
L-Band 1200-1400 MHz
SMD TRANSISTOR PD4
radar circuit
ERJ8GEYJ100V
L-band RF MOSFET
1030mhz
"RF MOSFET CLASS AB
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mode 5 IFF
Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1011-300
429-HVVi
EG-01-DS02B
EG-01-DS02B8
mode 5 IFF
Coaxicom
RF 1090MHz
hvvi
4884 MOSFET
hvv1011
RF MOSFET CLASS AB
100B270JP500X ATC
FXT00
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ERJ8GEYJ100V
Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V
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HVV1012-250
429-HVVi
EG-01-DS09B
ERJ8GEYJ100V
Johanson Technology
C1206C102K1RACTU
C1206C103K1RACTU
445-4109-2-ND
478-2666-1-ND
251R15S
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transistor SMD 12W MOSFET
Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the
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HVV1011-600
1030MHz
1090MHz.
transistor SMD 12W MOSFET
transistor SMD 12W
transistor JE 1090
smd transistor code 12w
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Untitled
Abstract: No abstract text available
Text: >LL'&''# &&#;A EVALUATION KIT )&&MWjji"+&L"'&)&#'&/&C>p RF Power Transistor Part Number: HVV1011-300 Evaluation Kit Part Number: HVV1011-300-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com
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HVV1011-300
HVV1011-300-EK
100B101JP500X
J153-ND
FXT000158
3-252510RS3394
P242393
SCAS-0440-08C
ZSLW-004-M
SCAS-0440-12M
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5230-7-C
Abstract: No abstract text available
Text: INTER SERIES ADAPTERS INTRODUCTION & 2.4 MM, 2.9 MM INTER SERIES Inter series coaxial adapters are some of the more common components used in RF, microwave and wireless applications. OEM’s and manufacturing and engineering test facilities are continually required to provide temporary or
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5120S
5130S
5230-7-C
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GROUND BASED RADAR
Abstract: transistor SMD R1D
Text: REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 818 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM HVV1214-140 (Preliminary Datasheet) L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle ! For Ground Based Radar Applications
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HVV1214-140
21DD1E)
GROUND BASED RADAR
transistor SMD R1D
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capacitor 10uF/63V
Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0405-175
EG-01-DS10A
429-HVVi
capacitor 10uF/63V
ds10a
capacitor 100uF 50V
capacitor 1206 63V
hex head screws
10uf 63v capacitor
AB-45
banana socket datasheet
diode gp 429
SMD 1206 RESISTOR 100 OHMS
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j152
Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
Text: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1214-100
429-HVVi
EG-01-DS06B
j152
RF MOSFET CLASS AB
L-Band 1200-1400 MHz
1030mhz
5919CC-TB-7
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J152-ND
Abstract: No abstract text available
Text: EVALUATION KIT >LL'&''#,&&#;A RF Power Transistor Part Number: HVV1011-600 Evaluation Kit Part Number: HVV1011-600-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com Contents: - PCB Component Placement Diagram
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HVV1011-600
HVV1011-600-EK
712-1388-1-ND
478-2646-1-ND
399-1222-2-ND
399-1236-2-ND
478-3134-1-ND
PCE3484TR-ND
HV800
FXT000116
J152-ND
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Untitled
Abstract: No abstract text available
Text: EVALUATION KIT >LL' '*#'*&#;A RF Power Transistor Part Number: HVV1214-140 Evaluation Kit Part Number: HVV1214-140-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com Contents: - PCB Component Placement Diagram
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HVV1214-140
HVV1214-140--EK
C1206C103K1RACTU
PCE3479CT-ND
PCE3483CT-ND
ERJ8GEYJ100V
ERJ8GEYJ102V
5919CC-TB-7
J151-ND
J152-ND
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7900F
Abstract: plug 3.5mm jack female 3080-9 Coaxicom plug 3.5mm female SMA Reverse 50 ohm termination 5230-7-C coaxicom coaxicom catalog 3993A tnc bulkhead jack
Text: COMPONENTS ATTENUATORS, PHASE ADJUSTERS, DC BLOCKS, DUST CAPS, SHORTS INTER SERIES ADAPTERS INTRODUCTION & 2.4 MM, 2.9 MM INTER SERIES NOTE: ATTENUATORS AVAILABLE IN ADDITIONAL VALUES THAN THOSE SHOWN. CALL FOR AVAILABILITY. DC-18 GHz TYPE N ATTENUATORS VSWR 1.35:1 MAX.
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DC-18
DC-500
DC-100
3524F-7-3
7900F
plug 3.5mm jack female
3080-9 Coaxicom
plug 3.5mm female
SMA Reverse 50 ohm termination
5230-7-C
coaxicom
coaxicom catalog
3993A
tnc bulkhead jack
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AIRBORNE DME
Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
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HVV1012-550
1025MHz
1150MHz.
AIRBORNE DME
transistor SMD 12W MOSFET
transistor SMD 12W
smd transistor code 12w
RF Transistor S10-12
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9044-9513-001
Abstract: SF2950
Text: SMA Field Replaceable Cross Reference S M A Field R e p la c e a b le J a c k C r o s s R e fe re n ce P in F la n g e .012 .500 sq 4 hole .375 sq 4 hole .223x 625 2 hole .015 .500 sq 4 hole .375 sq 4 hole 223X.625 2 hole .018 .500 sq 4 hole .375 sq 4 hole
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OCR Scan
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213-01SF
39PR133-2
39PR131-2
211-06SF
39PR132-3
213-06SF
39PR133-3
39PR131-3
211-03SF
39PR132-4
9044-9513-001
SF2950
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