1030MHz-1090MHz
Abstract: Avago 1090mhz signal Anaren anaren mixer 1030mhz airborn TriQuint radiall vco mimix
Text: Airborne Transponder/DMES Block Diagram: 1030MHz-1090MHz Transmitter PA PRE-DRIVER DRIVER Circulator Isolator H&S RADIALL Cables COUPLER Anaren M/A-COM FINAL Antenna M/A-COM RELL Avago M/A-COM Mimix Peregrine RELL Triquint FreescaleTM HVVi M/A-COM Microsemi
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1030MHz-1090MHz
1030MHz-1090MHz
Avago
1090mhz signal
Anaren
anaren mixer
1030mhz
airborn
TriQuint
radiall
vco mimix
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mode 5 IFF
Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1011-300
429-HVVi
EG-01-DS02A
EG-01-DS02A5
mode 5 IFF
diode gp 429
hvvi
"RF MOSFET" 300W
1030mhz
hvv1011
1090mhz
RF 1090MHz
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HVV0912-800
Abstract: SEMICONDUCTORS INC
Text: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor
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HVV0912-800
HVV0912-800
429-HVVi
EG-01-POXXX1
SEMICONDUCTORS INC
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UHF TRANSISTOR
Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0405-175
429-HVVi
EG-01-DS10B
05/XX/09
UHF TRANSISTOR
J152-ND
J151-ND
RF MOSFET CLASS AB
Coaxicom
transistor SMD g 28
100B100JP500X
RC1206JR-07100KL
smd transistor 259
4404 mosfet
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500W TRANSISTOR
Abstract: hvvi
Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1011-500L
on/18us
HVV1011-500L
EG-01-PO17X1
500W TRANSISTOR
hvvi
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uhf 150w mosfet
Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0912-150
121eliable.
EG-01-DS11A
or429-HVVi
uhf 150w mosfet
10uF CAPACITOR 1210 PACKAGE
capacitor 10uF/63V
smd transistor EK
10uf 63v capacitor
50V 1215MHZ
banana socket datasheet
capacitor 220uF/63V
diode gp 429
DS2346
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Radar
Abstract: diode gp 429 HV400 hvvi transistor 1150
Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,
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HVV1012-050
HVV1012-050
HVV1012-050MHz,
Pulsed10
HVV1012-060
1025-1150MHz,
10sPACKAGE
Radar
diode gp 429
HV400
hvvi
transistor 1150
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Untitled
Abstract: No abstract text available
Text: PACKAGE H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle ! For U H F band, Weather and Long Range Radar Applications ! The innovative Semiconductor Company! ! ! ! ! ! ! ABSOLUTE MAXIMUM RATING IEC 134
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V0405-175
21DD1E)
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HVV1012-550
Abstract: 4884 12W 01 TRANSISTOR hvvi
Text: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed
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HVV1012-550
HVV1012-550
429-HVVi
EG-01-PO18X2
4884
12W 01 TRANSISTOR
hvvi
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500W TRANSISTOR
Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
Text: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor
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HVV1011-500L
on/18us
HVV1011-500L
on/18
HV800
MIL-STD-883,
429-HVVi
EG-01-PO17X7
500W TRANSISTOR
500W
RF Transistor 1030 MHz
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HVV1214-140
Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain
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HVV1214-140
429-HVVi
EG-01-PO22X1
HVV1214-140
L-Band 1200-1400 MHz
SMD TRANSISTOR PD4
radar circuit
ERJ8GEYJ100V
L-band RF MOSFET
1030mhz
"RF MOSFET CLASS AB
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mode 5 IFF
Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1011-300
429-HVVi
EG-01-DS02B
EG-01-DS02B8
mode 5 IFF
Coaxicom
RF 1090MHz
hvvi
4884 MOSFET
hvv1011
RF MOSFET CLASS AB
100B270JP500X ATC
FXT00
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westcode scr
Abstract: toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR
Text: 90461431 RF, Microwave Components Your Global Source for RF, Microwave and Power Conversion Products Our valued suppliers Click on the supplier name below to visit their storefront on www.rell.com Richardson Electronics’ RF, Wireless & Power Division designs and distributes
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G15000CR
MK100104
westcode scr
toko filters
westcode diodes
TOKO INDUCTORS
tyco igbt
mitsubishi sic MOSFET
KU SERIES CHEMICON capacitor
nujira
NATIONAL IGBT
welding transformer SCR
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HVV0912-450
Abstract: diode gp 429 TACAN
Text: HVV0912-450 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulsewidth, 10% Duty Cycle For Ground DME/TACAN Applications DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor
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HVV0912-450
HVV0912-450
429-HVVi
EG-01-PO35X1
diode gp 429
TACAN
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TUBE Light Choke connection diagram
Abstract: UCC29910PW 90W ac adapter schematic PFC buck converter design guidelines 90W laptop adapter Buck PFC Controller buck pfc SLUS923 UCC29910 Laptop universal adapter 90w circuit diagram
Text: UCC29910 www.ti.com SLUSA04B – DECEMBER 2009 – REVISED JUNE 2010 Buck PFC Controller Check for Samples: UCC29910 FEATURES DESCRIPTION • The UCC29910 Buck Power Factor Correction PFC controller provides a relatively flat high-efficiency performance across universal line for designers
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UCC29910
SLUSA04B
UCC29910
TUBE Light Choke connection diagram
UCC29910PW
90W ac adapter schematic
PFC buck converter design guidelines
90W laptop adapter
Buck PFC Controller
buck pfc
SLUS923
Laptop universal adapter 90w circuit diagram
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NI-400
Abstract: diode gp 429 HV400
Text: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,
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HVV1012-050
HVV1012-050
HVV1012-050MHz,
Pulsed10
HVV1012-060
1025-1150MHz,
10sPACKAGE
NI-400
diode gp 429
HV400
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ERJ8GEYJ100V
Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V
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HVV1012-250
429-HVVi
EG-01-DS09B
ERJ8GEYJ100V
Johanson Technology
C1206C102K1RACTU
C1206C103K1RACTU
445-4109-2-ND
478-2666-1-ND
251R15S
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transistor SMD 12W MOSFET
Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the
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HVV1011-600
1030MHz
1090MHz.
transistor SMD 12W MOSFET
transistor SMD 12W
transistor JE 1090
smd transistor code 12w
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1030-1090MHz
Abstract: 4884 SM200 DS01A
Text: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1011-035
1030-1090MHz,
HVV1011-035
429-HVVi
EG-01-DS01A
1030-1090MHz
4884
SM200
DS01A
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PDF
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HVVi Semiconductors
Abstract: SM200
Text: HVV1214-025 L-Band High Power Pulsed Transistor 1200-1400MHz, 200µs, 10% Duty For Ground Based Radar Applications DESCRIPTION PACKAGE The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications
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HVV1214-025
1200-1400MHz,
HVV1214-025
429-HVVi
EG-01-DS05A
HVVi Semiconductors
SM200
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PDF
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1030mhz
Abstract: 2TD12 HV400 SM200 1090mhz
Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed
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HVV1011-040
HVV1214-075
HVV1011-040
1030-1090MHz,
HVV1011-035
1030mhz
2TD12
HV400
SM200
1090mhz
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PDF
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RTO BH
Abstract: NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369
Text: Die no. D-15 NPN medium power transistor Dimensions Units : mm These are epitaxial planar NPN silicon transistors. SST3 Features 2.9 available in a SST3 (SST, SOT-23) package, see page 300 ± 0.2 1 . 9 * 0.2 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at
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OT-23)
RTO BH
NPN BH RE
IY 925 TRANSISTOR
transistor marking bh ra
transistors 368 & 369
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Untitled
Abstract: No abstract text available
Text: 3-phase, full-wave, motor driver BA6491FS The BA6491 FS is an IC that can be used to control and drive floppy disk drive spindle motors. This IC uses a 3-phase, full-wave drive system. Dimensions Units : mm BA6491FS (SSOP-P32) I36±02 With a built-in digital servo, amplifier
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BA6491FS
BA6491
SSOP-P32)
SSOP-P32
001G21Ã
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PDF
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E7 Charging circuit diagram
Abstract: BA7039 peak hold ic IC drum
Text: BA7039 VCR auto tracking interface The BA7039 is an auto tracking interface device for VCRs. Dimensions Units : mm BA7039 (DIP16) Using the audio or video FM signal, the 1C generates an integral waveform or peak hold voltage that is proportional to the peak detection output.
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BA7039
BA7039
DIP16
D13bl2
E7 Charging circuit diagram
peak hold ic
IC drum
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