mode 5 IFF
Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1011-300
429-HVVi
EG-01-DS02A
EG-01-DS02A5
mode 5 IFF
diode gp 429
hvvi
"RF MOSFET" 300W
1030mhz
hvv1011
1090mhz
RF 1090MHz
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz. FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage
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HVV1011-035
SM200
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500W TRANSISTOR
Abstract: hvvi
Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1011-500L
on/18us
HVV1011-500L
EG-01-PO17X1
500W TRANSISTOR
hvvi
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500W TRANSISTOR
Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
Text: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor
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HVV1011-500L
on/18us
HVV1011-500L
on/18
HV800
MIL-STD-883,
429-HVVi
EG-01-PO17X7
500W TRANSISTOR
500W
RF Transistor 1030 MHz
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mode 5 IFF
Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1011-300
429-HVVi
EG-01-DS02B
EG-01-DS02B8
mode 5 IFF
Coaxicom
RF 1090MHz
hvvi
4884 MOSFET
hvv1011
RF MOSFET CLASS AB
100B270JP500X ATC
FXT00
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Untitled
Abstract: No abstract text available
Text: >LL'&''# &&#;A EVALUATION KIT )&&MWjji"+&L"'&)&#'&/&C>p RF Power Transistor Part Number: HVV1011-300 Evaluation Kit Part Number: HVV1011-300-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com
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HVV1011-300
HVV1011-300-EK
100B101JP500X
J153-ND
FXT000158
3-252510RS3394
P242393
SCAS-0440-08C
ZSLW-004-M
SCAS-0440-12M
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1030-1090MHz
Abstract: 4884 SM200 DS01A
Text: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1011-035
1030-1090MHz,
HVV1011-035
429-HVVi
EG-01-DS01A
1030-1090MHz
4884
SM200
DS01A
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1030mhz
Abstract: 2TD12 HV400 SM200 1090mhz
Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed
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HVV1011-040
HVV1214-075
HVV1011-040
1030-1090MHz,
HVV1011-035
1030mhz
2TD12
HV400
SM200
1090mhz
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HV400
Abstract: 1030 mhz interrogator 1030 PULSED
Text: HVV1011-075L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-075L device is a high voltage silicon enhancement mode RF transistor
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HVV1011-075L
on/18us
HVV1011-075L
on/18
429-HVVi
EG-01-POXXX1
HV400
1030 mhz
interrogator
1030 PULSED
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HVV1011-1000L
Abstract: transistor 1000W 1000w power supply 1030 PULSED
Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor
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HVV1011-1000L
on/18us
HVV1011-1000L
on/18
429-HVVi
EG-01-POXXX2
transistor 1000W
1000w power supply
1030 PULSED
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HVV1011-600
Abstract: hvvi 1090MHZ
Text: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor
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HVV1011-600
1030-1090MHz
HVV1011-600
HV800
MIL-STD-883,
EG-01-PO15X4
hvvi
1090MHZ
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hvv1011
Abstract: HV400 Radar Transponder HV800 SM200 1030 HVV1011-300 rf power transistors
Text: Product Selection Guide Avionics RF Power Transistors For IFF, TCAS, Transponder/Interrogator Applications Pulse Width = 50us, Duty Cycle = 2% PART NUMBER HVV1011-035 HVV1011-300 HVV1011-600 FREQUENCY (MHz) 1030-1090 1030-1090 1030-1090 VDD (V) 50 50 50
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HVV1011-035
HVV1011-300
HVV1011-600
SM200
HV400
HV800
hvv1011
HV400
Radar Transponder
HV800
SM200
1030
HVV1011-300
rf power transistors
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J152-ND
Abstract: No abstract text available
Text: EVALUATION KIT >LL'&''#,&&#;A RF Power Transistor Part Number: HVV1011-600 Evaluation Kit Part Number: HVV1011-600-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com Contents: - PCB Component Placement Diagram
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HVV1011-600
HVV1011-600-EK
712-1388-1-ND
478-2646-1-ND
399-1222-2-ND
399-1236-2-ND
478-3134-1-ND
PCE3484TR-ND
HV800
FXT000116
J152-ND
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diode gp 429
Abstract: HVV1011-1000L interrogator transistor 1000W
Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, LTDC 6.4% For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor
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HVV1011-1000L
on/18us
HVV1011-1000L
on/18
429-HVVi
EG-01-POXXXX
07/XX/09
diode gp 429
interrogator
transistor 1000W
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GROUND BASED RADAR
Abstract: AIRBORNE DME vimostm
Text: Thermal Characteristics & Considerations VIMOS Product Portfolio VIMOS THERMAL CHARACTERISTICS & CONSIDERATIONS Introduction: This document provide’s the RF amplifier design Engineer with a useful reference to aid in thermal considerations and calculations, applied to the VIMOSTM portfolio of RF power transistors. Rather
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1214-1400MHz
200uS
GROUND BASED RADAR
AIRBORNE DME
vimostm
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Untitled
Abstract: No abstract text available
Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE
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transistor SMD 12W MOSFET
Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the
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HVV1011-600
1030MHz
1090MHz.
transistor SMD 12W MOSFET
transistor SMD 12W
transistor JE 1090
smd transistor code 12w
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SM200
Abstract: Radar HV400 Radar Transponder HVV1011-300 HVV1214-100
Text: The innovative Semiconductor Company! Technology Overview TM A NEW APPROACH TO SILICON RF POWER TRANSISTOR DESIGN Today’s radar and avionics applications demand RF power amplifiers that can deliver higher power density in smaller packages and with greater reliability. But, the silicon technologies currently used in most power transistors
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