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    100B180JP500X Price and Stock

    Kyocera AVX Components 100B180JP500XT1K

    CAP CER 18PF 500V P90 1111
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    DigiKey 100B180JP500XT1K Cut Tape 457 1
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    100B180JP500XT1K Digi-Reel 457 1
    • 1 $7.18
    • 10 $4.937
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    100B180JP500XT1K Reel 500
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    Mouser Electronics 100B180JP500XT1K
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    Richardson RFPD 100B180JP500XT1K 1,000
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    Kyocera AVX Components 100B180JP500XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 100B180JP500XC100
    • 1 $6.22
    • 10 $5.39
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    Richardson RFPD 100B180JP500XC100 38 100
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    Kyocera AVX Components 100B180JP500XTV

    Silicon RF Capacitors / Thin Film 500V 18pF Tol 5% Las Mkg Vertical
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    Kyocera AVX Components 100B180JP500XT

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Kyocera AVX Components 100B180JP500XTV1K

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 100B180JP500XTV1K
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    Find more 100B180JP500X price and stock on Findchips.com

    100B180JP500X Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B180JP500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 18PF 500V P90 1111 Original PDF
    100B180JP500XT1K American Technical Ceramics Ceramic Capacitor 18PF 500V P90 1111 Original PDF

    100B180JP500X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C8450

    Abstract: MRF5S4140H
    Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 6, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S9070NR1 A113 A114 A115 AN1955 C101 JESD22 MRF5S9070NR1 MRF5S9070NR

    UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet

    J0743

    Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 J0743 MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S9070NR1 MRF5S9070MR1 MRF5S9070NR1

    AN1955

    Abstract: MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR
    Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF5S9070NR1/D MRF5S9070NR1 AN1955 MRF5S9070NR1 T491D106K035AS 272915l crcw12065603f100 MRF5S9070NR

    MRF5S9070NR1

    Abstract: marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9070MR1 MRF5S9070NR1. MRF5S9070NR1 marking us capacitor pf l1 A113 A114 A115 AN1955 C101 JESD22 crcw12065603f100 MRF5S9070MR1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF5S9070NR1/D MRF5S9070NR1

    MRF5S9070N

    Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S9070NR1 MRF5S9070MR1 MRF5S9070N 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR

    MRF5S4140H

    Abstract: No abstract text available
    Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H

    DATUM

    Abstract: MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S9070NR1 Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S9070NR1 MRF5S9070MR1 MRF5S9070NR1 DATUM MRF5S9070NR

    MRF5S9070NR

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9070NR1/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET MRF5S9070NR1 Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S9070NR1/D MRF5S9070NR1 MRF5S9070NR

    MRF5S4140H

    Abstract: No abstract text available
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H

    22 pf capacitor datasheet

    Abstract: 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3 MRF5S4140HSR3 J0743
    Text: RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H 22 pf capacitor datasheet 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HSR3 J0743

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9070MR1 Rev. 5, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9070NR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9070MR1 MRF5S9070NR1.

    020C

    Abstract: A114 A115 JESD22 MRF5S9070NR1 515D107M050BB6A crcw12065603f100 MRF5S9070NR
    Text: Freescale Semiconductor Technical Data MRF5S9070NR1 Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S9070NR1 MRF5S9070MR1 MRF5S9070NR1 020C A114 A115 JESD22 515D107M050BB6A crcw12065603f100 MRF5S9070NR