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Kyocera AVX Components 100B101JW500XT1K CAP CER 100PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B101JW500XT1K	Digi-Reel	6,048		1	1 $6.26 10 $4.271 100 $3.2121 1000 $3.2121 10000 $3.2121	Buy Now
	100B101JW500XT1K	Cut Tape	6,048		1	1 $6.26 10 $4.271 100 $3.2121 1000 $3.2121 10000 $3.2121	Buy Now
	100B101JW500XT1K	Reel	6,000		500	1 - 10 - 100 - 1000 $2.62516 10000 $2.43833	Buy Now
Avnet Americas	100B101JW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B101JW500XT1K		499			1 $5.81 10 $4.28 100 $3.22 1000 $2.55 10000 $2.55	Buy Now
Richardson RFPD	100B101JW500XT1K		1,000		1,000	1 - 10 - 100 - 1000 $2.87 10000 $2.52	Buy Now
Kyocera AVX Components 100B101JWN500XC100 MLC A/B/R - Waffle Pack (Alt: 100B101JWN500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B101JWN500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B101JWN500XC100					1 $6.55 10 $5.68 100 $4.31 1000 $4.31 10000 $4.31	Get Quote
TTI	100B101JWN500XC100	WAFL			100	1 - 10 - 100 $4.27 1000 $4.27 10000 $4.27	Buy Now
Richardson RFPD	100B101JWN500XC100				100	1 - 10 - 100 $3.62 1000 $3.29 10000 $2.9	Buy Now
Kyocera AVX Components 100B101JW500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B101JW500XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B101JW500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B101JW500XTV					1 - 10 - 100 - 1000 $3.74 10000 $3.74	Get Quote
Kyocera AVX Components 100B101JW500XTV1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B101JW500XTV1K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B101JW500XTV1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B101JW500XTV1K					1 - 10 - 100 - 1000 $2.72 10000 $2.72	Get Quote
Kyocera AVX Components 100B101JWN500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B101JWN500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B101JWN500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B101JWN500XT					1 - 10 - 100 - 1000 $3.96 10000 $3.96	Get Quote

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100B101JW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B101JW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111		Original	PDF
100B101JW500XT1K		American Technical Ceramics	Ceramic Capacitor 100PF 500V P90 1111		Original	PDF

100B101JW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
100B101JW Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to	Original	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3	PDF
J294 Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS	PDF
transistor GT 1081 Abstract: MRFG35010AR5 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for	Original	MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5	PDF
J209 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 0, 5/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to	Original	MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H J209	PDF
transistor MARKING NC KRC Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09130E Hz--960 AGR09130E AGR09130EU AGR09130EF transistor MARKING NC KRC MARKING CODE c26 AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP	PDF
25C1740 Abstract: 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3 V10690 Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 1, 6/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to	Original	MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 25C1740 465B A114 A115 AN1955 JESD22 MRF7S21170HSR3 V10690	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 3, 9/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to	Original	MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H	PDF
bc857b nxp Abstract: C5750X7S2A106M Gan transistor C 1972 transistor Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from	Original	CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50 bc857b nxp C5750X7S2A106M Gan transistor C 1972 transistor	PDF
AGR09130E Abstract: AGR09130EF AGR09130EU JESD22-C101A Text: Draft Copy Only Preliminary Data Sheet November 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09130E Hz--960 AGR09130E DS04-030RFPP DS03-151RFPP) AGR09130EF AGR09130EU JESD22-C101A	PDF
100A101JW150XT Abstract: transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for	Original	MRFG35010A MRFG35010AR1 100A101JW150XT transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101	PDF
Untitled Abstract: No abstract text available Text: CLF1G0035-50; CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation is from	Original	CLF1G0035-50; CLF1G0035S-50 CLF1G0035-50 CLF1G0035S-50 1G0035S-50	PDF
RM73B2B Abstract: gl 3201 AGR09130EF AGR09130E AGR09130EU JESD22-C101A Text: Draft Copy Only Preliminary Data Sheet April 2004 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09130E Hz--960 AGR09130E DS04-154RFPP DS04-030RFPP) RM73B2B gl 3201 AGR09130EF AGR09130EU JESD22-C101A	PDF
20-60MHz Abstract: 100b101jw500xt Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 2, 8/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to	Original	MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H 20-60MHz 100b101jw500xt	PDF
WZ150 Abstract: No abstract text available Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09130E Hz--960 DS03-151RFPP WZ150	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for	Original	MRFG35010A MRFG35010AR1	PDF
Z921 Abstract: transistor MARKING NC KRC MOSFET 930 06 ng Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple	Original	AGR09130E Hz--960 AGR09130EU AGR09130EF Z921 transistor MARKING NC KRC MOSFET 930 06 ng	PDF
100A100JW150XT Abstract: transistor GT 1081 100A101JW150XT 100B102JW500XT 200B104KW50XT AN1955 MRFG35010AR1 gt 1438 transistor D 1108 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for	Original	MRFG35010A MRFG35010AR1 100A100JW150XT transistor GT 1081 100A101JW150XT 100B102JW500XT 200B104KW50XT AN1955 MRFG35010AR1 gt 1438 transistor D 1108	PDF
Untitled Abstract: No abstract text available Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.	Original	CLF1G0035S-50 CLF1G0035S-50	PDF

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Kyocera AVX Components 100B101JW500XT1K

Kyocera AVX Components 100B101JWN500XC100

Kyocera AVX Components 100B101JW500XTV

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Kyocera AVX Components 100B101JWN500XT

100B101JW Datasheets (2)

100B101JW Datasheets Context Search

100B101JW

J294

transistor GT 1081

J209

transistor MARKING NC KRC

25C1740

Untitled

bc857b nxp

AGR09130E

100A101JW150XT

Untitled

RM73B2B

20-60MHz

WZ150

Untitled

Z921

100A100JW150XT

Untitled