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    100B101JW500XT Price and Stock

    Kyocera AVX Components 100B101JW500XT

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101JW500XT Cut Tape 5,959 1
    • 1 $6.26
    • 10 $4.271
    • 100 $3.2121
    • 1000 $3.2121
    • 10000 $3.2121
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    100B101JW500XT Digi-Reel 5,959 1
    • 1 $6.26
    • 10 $4.271
    • 100 $3.2121
    • 1000 $3.2121
    • 10000 $3.2121
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    100B101JW500XT Reel 5,500 500
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    • 1000 $2.62516
    • 10000 $2.43833
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    Avnet Americas 100B101JW500XT Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100B101JW500XT 1,306
    • 1 $5.78
    • 10 $4.98
    • 100 $3.73
    • 1000 $3.01
    • 10000 $2.95
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    Future Electronics 100B101JW500XT Reel 16 Weeks 500
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    • 1000 $3.67
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    TTI 100B101JW500XT Reel 5,500 500
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    • 1000 $3.66
    • 10000 $3.59
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    Richardson RFPD 100B101JW500XT 500
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    Avnet Asia 100B101JW500XT 18 Weeks 500
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    Kyocera AVX Components 100B101JW500XT1K

    CAP CER 100PF 500V P90 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 100B101JW500XT1K Digi-Reel 1
    • 1 $8.23
    • 10 $5.896
    • 100 $8.23
    • 1000 $8.23
    • 10000 $8.23
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    100B101JW500XT1K Reel 1,000
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    • 1000 $3.75044
    • 10000 $3.57995
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    100B101JW500XT1K Cut Tape 1
    • 1 $8.23
    • 10 $5.896
    • 100 $8.23
    • 1000 $8.23
    • 10000 $8.23
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    Avnet Americas 100B101JW500XT1K Tape w/Leader 16 Weeks 1,000
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    Mouser Electronics 100B101JW500XT1K 469
    • 1 $5.81
    • 10 $4.28
    • 100 $3.22
    • 1000 $2.55
    • 10000 $2.55
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    Richardson RFPD 100B101JW500XT1K 1,000 1,000
    • 1 -
    • 10 -
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    • 1000 $2.87
    • 10000 $2.52
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    Kyocera AVX Components 100B101JW500XTV

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B101JW500XTV)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B101JW500XTV Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100B101JW500XTV
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    Kyocera AVX Components 100B101JW500XTV1K

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B101JW500XTV1K)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100B101JW500XTV1K Tape w/Leader 16 Weeks 1,000
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    Mouser Electronics 100B101JW500XTV1K
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    ATC 100B101JW500XT

    Electronic Component
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    ComSIT USA 100B101JW500XT 673
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    100B101JW500XT Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B101JW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101JW500XT1K American Technical Ceramics Ceramic Capacitor 100PF 500V P90 1111 Original PDF

    100B101JW500XT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5 PDF

    J209

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 0, 5/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H J209 PDF

    25C1740

    Abstract: 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3 V10690
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 1, 6/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 25C1740 465B A114 A115 AN1955 JESD22 MRF7S21170HSR3 V10690 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 3, 9/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H PDF

    100A101JW150XT

    Abstract: transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		MRFG35010A MRFG35010AR1 100A101JW150XT transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101 PDF

    20-60MHz

    Abstract: 100b101jw500xt
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 2, 8/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H 20-60MHz 100b101jw500xt PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		MRFG35010A MRFG35010AR1 PDF

    100A100JW150XT

    Abstract: transistor GT 1081 100A101JW150XT 100B102JW500XT 200B104KW50XT AN1955 MRFG35010AR1 gt 1438 transistor D 1108
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		MRFG35010A MRFG35010AR1 100A100JW150XT transistor GT 1081 100A101JW150XT 100B102JW500XT 200B104KW50XT AN1955 MRFG35010AR1 gt 1438 transistor D 1108 PDF