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Kyocera AVX Components 100B101JP500XT CAP CER 100PF 500V P90 1111
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DigiKey	100B101JP500XT	Reel	500		500	1 - 10 - 100 - 1000 $4.24973 10000 $4.44226	Buy Now
	100B101JP500XT	Cut Tape	463		1	1 $9.22 10 $6.44 100 $4.9582 1000 $4.9582 10000 $4.9582	Buy Now
	100B101JP500XT	Digi-Reel			1	1 $9.22 10 $6.44 100 $4.9582 1000 $4.9582 10000 $4.9582	Buy Now
Avnet Americas	100B101JP500XT	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B101JP500XT					1 $7.43 10 $5.75 100 $4.61 1000 $3.85 10000 $3.85	Get Quote
Richardson RFPD	100B101JP500XT				500	1 - 10 - 100 - 1000 $3.29 10000 $2.9	Buy Now
Avnet Asia	100B101JP500XT			18 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components 100B101JP500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B101JP500XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B101JP500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B101JP500XTV					1 - 10 - 100 - 1000 $4.13 10000 $4.13	Get Quote
Kyocera AVX Components 100B101JP500XC100 Silicon RF Capacitors / Thin Film MLC A/B/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B101JP500XC100					1 $6.55 10 $5.68 100 $4.36 1000 $3.7 10000 $3.63	Get Quote
Richardson RFPD	100B101JP500XC100		173		100	1 - 10 - 100 $3.52 1000 $3.21 10000 $2.83	Buy Now
Kyocera AVX Components 100B101JP500XT1K Silicon RF Capacitors / Thin Film MLC A/B/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B101JP500XT1K					1 - 10 - 100 - 1000 $3.13 10000 $3.13	Get Quote
Richardson RFPD	100B101JP500XT1K				1,000	1 - 10 - 100 - 1000 $3.29 10000 $2.9	Buy Now
Kyocera AVX Components 100B101JP500XTV1K Silicon RF Capacitors / Thin Film MLC A/B/R
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Mouser Electronics	100B101JP500XTV1K					1 - 10 - 100 - 1000 $3.13 10000 $3.13	Get Quote

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100B101JP500X Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B101JP500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111		Original	PDF

100B101JP500X Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF6P9220H MRF6P9220HR3	PDF
tantulum capacitor Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance	Original	MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRFG35005MT1 MRFG35005NT1.	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	MRFG35010MT1 MRFG35010NT1 MRFG35010MT1	PDF
13009 TRANSISTOR equivalent Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to	Original	MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent	PDF
marking 0619 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35005MT1 MRFG35005MT1 marking 0619	PDF
8772 P Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies	Original	MRFG35003MT1/D MRFG35003MT1 8772 P motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor	PDF
RF FET TRANSISTOR 3 GHZ Abstract: A113 MRFG35003NT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1	PDF
6 017 03 61 Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07	PDF
Marking Z7 Gate Driver Abstract: MRFG35005MT1 A113 MRFG35005NT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRFG35005MT1 MRFG35005NT1. Marking Z7 Gate Driver MRFG35005MT1 A113 MRFG35005NT1	PDF
A113 Abstract: MRFG35005MT1 MRFG35005NT1 Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35005MT1 MRFG35005NT1 MRFG35005NT1 A113 MRFG35005MT1	PDF
ATC 1184 Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814 Text: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814	PDF
Untitled Abstract: No abstract text available Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE	Original		PDF

transistor std 13007 Abstract: ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class	Original	MRFG35010N MRFG35010NT1 transistor std 13007 ATC 601 IPC transistor E 13007 FET 4016 MRFG35010 A113 MRFG35010NT1 j 13007 TRANSISTOR 1309-2	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet	Original	MRFG35003MT1 MRFG35003MT1 RDMRFG35003MT1BWA	PDF
MRFG35010ANT1 Abstract: IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1 MRFG35010ANT1 IRL 724 N A113 AN1955 arco 466 14584 atc 17-33 transistor d 4515 EQUIVALENT	PDF
transistor std 13007 Abstract: 0944 Text: Freescale Semiconductor Technical Data Document Number: MRFG35010N Rev. 6, 2/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class	Original	MRFG35010N MRFG35010NT1 MRFG35010N transistor std 13007 0944	PDF
transistor on 4959 Abstract: GT5040 Text: Document Number: MRFG35002N6 Rev. 0, 2/2006 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35002N6 MRFG35002N6T1 MRFG35002N6 transistor on 4959 GT5040	PDF
ma 8630 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 2, 6/2005 Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 RF Power Field Effect Transistors Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	MRFG35003MT1 MRFG35003NT1 MRFG35003MT1 ma 8630	PDF
100A100JP150X Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class	Original	MRFG35010MT1 MRFG35010NT1 MRFG35010MT1 100A100JP150X	PDF
HVV1214-140 Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain	Original	HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB	Original	MRFG35010AN MRFG35010ANT1	PDF

100B101JP500X Search Results

100B101JP500X Price and Stock

Kyocera AVX Components 100B101JP500XT

Kyocera AVX Components 100B101JP500XTV

Kyocera AVX Components 100B101JP500XC100

Kyocera AVX Components 100B101JP500XT1K

Kyocera AVX Components 100B101JP500XTV1K

100B101JP500X Datasheets (1)

100B101JP500X Datasheets Context Search

Untitled

tantulum capacitor

Untitled

Untitled

Untitled

13009 TRANSISTOR equivalent

marking 0619

8772 P

RF FET TRANSISTOR 3 GHZ

6 017 03 61

Marking Z7 Gate Driver

A113

ATC 1184

Untitled

transistor std 13007

Untitled

MRFG35010ANT1

transistor std 13007

transistor on 4959

ma 8630

100A100JP150X

HVV1214-140

Untitled

Untitled