Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005N
MRFG35005NT1
MRFG35005ANT1.
MRFG35005NT1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRFG35005MT1
MRFG35005NT1.
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13009 TRANSISTOR equivalent
Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to
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MRFG35030R5/D
MRFG35030R5
13009 TRANSISTOR equivalent
D 13009 K
transistor M 9718
4221 motorola transistor
transistor E 13009
MRFG35030
transistor d 13009
MRFG35030R5
transistor 9718
transistor E 13009 equivalent
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marking 0619
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005MT1
MRFG35005MT1
marking 0619
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8772 P
Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
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MRFG35003MT1/D
MRFG35003MT1
8772 P
motorola 10116
transistor 17556
A113
MRFG35003MT1
motorola 6809
PLD15
transistor 115 h 8772 p
17556 transistor
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RF FET TRANSISTOR 3 GHZ
Abstract: A113 MRFG35003NT1
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35003N
MRFG35003NT1
RF FET TRANSISTOR 3 GHZ
A113
MRFG35003NT1
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Marking Z7 Gate Driver
Abstract: MRFG35005MT1 A113 MRFG35005NT1
Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRFG35005MT1
MRFG35005NT1.
Marking Z7 Gate Driver
MRFG35005MT1
A113
MRFG35005NT1
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A113
Abstract: MRFG35005MT1 MRFG35005NT1
Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005MT1
MRFG35005NT1
MRFG35005NT1
A113
MRFG35005MT1
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ATC 1184
Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
Text: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005MT1/D
MRFG35005MT1
ATC 1184
A113
MRFG35005MT1
C 4804 transistor
"class AB Linear"
z9 ma 814
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ma 8630
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 2, 6/2005 Gallium Arsenide PHEMT MRFG35003NT1 MRFG35003MT1 RF Power Field Effect Transistors Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class
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MRFG35003MT1
MRFG35003NT1
MRFG35003MT1
ma 8630
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A113
Abstract: MRFG35005ANT1 MRFG35005NT1 MM 5058
Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35005N
MRFG35005NT1
A113
MRFG35005ANT1
MRFG35005NT1
MM 5058
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Marking Z7 Gate Driver
Abstract: A113 MRFG35003ANT1 MRFG35003NT1 transistor 8772 TC 8644
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35003N
MRFG35003NT1
MRFG35003ANT1.
MRFG35003NT1
Marking Z7 Gate Driver
A113
MRFG35003ANT1
transistor 8772
TC 8644
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ATC 1184
Abstract: A113 MRFG35005MT1 tc 106-10
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
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MRFG35005MT1/D
MRFG35005MT1
ATC 1184
A113
MRFG35005MT1
tc 106-10
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 3, 1/2006 Replaced by MRFG35003NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRFG35003MT1
MRFG35003NT1.
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transistor d 13009
Abstract: 13009 TRANSISTOR equivalent 136.21 200B393KP50X CDR33BX104AKWS MRFG35030 MRFG35030R5 RO4350
Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in
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MRFG35030R5
transistor d 13009
13009 TRANSISTOR equivalent
136.21
200B393KP50X
CDR33BX104AKWS
MRFG35030
MRFG35030R5
RO4350
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13009 TRANSISTOR equivalent
Abstract: transistor d 13009
Text: MOTOROLA Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in
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MRFG35030R5/D
MRFG35030R5
MRFG35030R5
MRFG35030R5/D
13009 TRANSISTOR equivalent
transistor d 13009
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35003N
MRFG35003NT1
MRFG35003ANT1.
MRFG35003NT1
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13009 TRANSISTOR equivalent
Abstract: MRFG35030 transistor d 13009 MRFG35030R5
Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in
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MRFG35030R5
13009 TRANSISTOR equivalent
MRFG35030
transistor d 13009
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Marking Z7 Gate Driver
Abstract: A113 MRFG35003MT1 MRFG35003NT1
Text: Freescale Semiconductor Technical Data Document Number: MRFG35003MT1 Rev. 3, 1/2006 Replaced by MRFG35003NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
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MRFG35003MT1
MRFG35003NT1.
Marking Z7 Gate Driver
A113
MRFG35003MT1
MRFG35003NT1
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MC13892
Abstract: FET GAAS marking a transistor z4 30 transistor d 13009 H 9832 C696 MARKING Z7 RF TRANSISTOR 2.5 GHZ s parameter mc13892 schematic MRFG35030
Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in
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MRFG35030R5
MC13892
MC13892
FET GAAS marking a
transistor z4 30
transistor d 13009
H 9832
C696
MARKING Z7
RF TRANSISTOR 2.5 GHZ s parameter
mc13892 schematic
MRFG35030
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6821 Freescale
Abstract: transistor 17556 7682 ADC
Text: Freescale Semiconductor Technical Data MRFG35003MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
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MRFG35003MT1
MRFG35003MT1
6821 Freescale
transistor 17556
7682 ADC
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TRIMMER capacitor 160 pF
Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Text: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e
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b3t72SM
100A101JP50
1N4007
BC337
BD135
TPV5055B
TRIMMER capacitor 160 pF
transistor BC337
TRIMMER capacitor 10-40 pf
22 pf trimmer capacitor
1n4007 mttf
linear amplifier 470-860
Zener diode 9.1
470-860 mhz Power amplifier 5 w
capacitor c3b
TPV5055B
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diode LT 1n4007
Abstract: transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 100A101JP50 3 pin TRIMMER capacitor 1n4007 mttf
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5055B The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r o u tp u t stages in Band IV & V TV tra n s m itte r a m plifiers. Interna! m a tch
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5055B
BC337
BD135
1N4007
100A101JP50
diode LT 1n4007
transistor BC337
bc337 transistor
Zener diode 9.1
22 pf trimmer
100A1R3BP50
22 pf trimmer capacitor
3 pin TRIMMER capacitor
1n4007 mttf
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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