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    Rochester Electronics LLC MRFG35003ANT1

    RF MOSFET PHEMT FET 12V PLD-1.5
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    DigiKey MRFG35003ANT1 Bulk 285 24
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    NXP Semiconductors MRFG35003ANT1

    RF MOSFET PHEMT FET 12V PLD-1.5
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    DigiKey MRFG35003ANT1 Reel 1,000
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    Avnet Americas MRFG35003ANT1 Reel 4 Weeks 28
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    Freescale Semiconductor MRFG35003ANT1

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    Bristol Electronics MRFG35003ANT1 8
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    Rochester Electronics MRFG35003ANT1 285 1
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    MRFG35003ANT1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MRFG35003ANT1 Freescale Semiconductor 3.5GHZ 3W 12V GAASPLD1.5 Original PDF

    MRFG35003ANT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRFG35003ANT1

    Abstract: ATC 1084 ic atc 1084 PANASONIC MA 645 911 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 0, 4/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003AN MRFG35003ANT1 MRFG35003ANT1 ATC 1084 ic atc 1084 PANASONIC MA 645 911 A113 A114 A115 AN1955 C101 JESD22

    Marking Z7 Gate Driver

    Abstract: A113 MRFG35003ANT1 MRFG35003NT1 transistor 8772 TC 8644
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1 Marking Z7 Gate Driver A113 MRFG35003ANT1 transistor 8772 TC 8644

    CPE 2-129

    Abstract: N 341 AB PANASONIC MA 645 911 ZO 607 MA A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003AN MRFG35003ANT1 CPE 2-129 N 341 AB PANASONIC MA 645 911 ZO 607 MA A113 A114 A115 AN1955 C101 JESD22

    ATC 1084

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRFG35003ANT1 transistor c 413 ATC 1084 -33
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003AN MRFG35003ANT1 ATC 1084 A113 A114 A115 AN1955 C101 JESD22 MRFG35003ANT1 transistor c 413 ATC 1084 -33

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 replaced by MRFG35003ANT1. MRFG35003NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N MRFG35003NT1 MRFG35003ANT1. MRFG35003NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003AN MRFG35003ANT1

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    BA 7891 NG

    Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
    Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进


    Original     		PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104

    MRF8P9040N

    Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial


    Original     		PDF

    6 pin TRANSISTOR SMD CODE CAA

    Abstract: TEA6721 BF991 spice model
    Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、


    Original     		PDF

    100B101

    Abstract: ma 8630
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 5, 1/2008 MRFG35003NT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003NT1 MRFG35003ANT1. MRFG35003N MRFG35003NT1 MRFG35003N 100B101 ma 8630