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    1.5E1 Price and Stock

    Kyocera AVX Components SR215E104MAATR2

    CAP CER RADIAL
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    DigiKey SR215E104MAATR2 Cut Tape 6,000 1
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    TE Connectivity CPF0201B2K15E1

    CPF 0201 2K15 0.1% 25PPM 1K RL
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    DigiKey CPF0201B2K15E1 Reel 3,000 1,000
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    Master Electronics CPF0201B2K15E1
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    Diodes Incorporated AP7363-15E-13

    IC REG LINEAR 1.5V 1.5A SOT223
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    DigiKey AP7363-15E-13 Cut Tape 2,490 1
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    AP7363-15E-13 Digi-Reel 2,490 1
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    Avnet Americas AP7363-15E-13 Reel 8 Weeks 2,500
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    Avnet Silica AP7363-15E-13 2,500 10 Weeks 2,500
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    New Advantage Corporation AP7363-15E-13 2,500 1
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    Same Sky PTN15-E11NB20

    TRIMMER 1M OHM 0.2W PC PIN TOP
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    DigiKey PTN15-E11NB20 Bag 1,972 1
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    Same Sky PTN15-E11SB20

    TRIMMER 1M OHM 0.2W PC PIN TOP
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    DigiKey PTN15-E11SB20 Bag 1,000 1
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    1.5E1 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    15E1C15.5 Littelfuse Electrical, Specialty Fuses, Circuit Protection, FUSE M/V E-RATED 15E 15.5KV Original PDF
    15E-1C-15.5 Littelfuse E Rated Medium Voltage Fuses Original PDF
    15E-1C-15.5 Littelfuse Medium Voltage Fuses - 2400 - 25,500 VAC, Current Limiting Original PDF
    15E1C15.5S Littelfuse Electrical, Specialty Fuses, Circuit Protection, FUSE M/V E-RATED 15E 15.5KV SEAL Original PDF
    15E1C25.8 Littelfuse Electrical, Specialty Fuses, Circuit Protection, FUSE M/V E-RATED 15E 25.8KV Original PDF
    15E-1C-25.8 Littelfuse E Rated Medium Voltage Fuses Original PDF
    15E-1C-25.8 Littelfuse Medium Voltage Fuses - 2400 - 25,500 VAC, Current Limiting Original PDF
    15E1C2.75 Littelfuse Electrical, Specialty Fuses, Circuit Protection, FUSE M/V E-RATED 15E 2.75KV Original PDF
    15E-1C-2.75 Littelfuse E Rated Medium Voltage Fuses Original PDF
    15E-1C-2.75 Littelfuse Medium Voltage Fuses - 2400 - 25,500 VAC, Current Limiting Original PDF
    15E1C38.0 Littelfuse Electrical, Specialty Fuses, Circuit Protection, FUSE M/V E-RATED 15E 38.0KV Original PDF
    15E-1C-38.0 Littelfuse E Rated Medium Voltage Fuses Original PDF
    15E-1C-38.0 Littelfuse Medium Voltage Fuses - 2400 - 25,500 VAC, Current Limiting Original PDF
    15E1C5.5 Littelfuse Electrical, Specialty Fuses, Circuit Protection, FUSE M/V E-RATED 15E 5.5KV Original PDF
    15E-1C-5.5 Littelfuse E Rated Medium Voltage Fuses Original PDF
    15E-1C-5.5 Littelfuse Medium Voltage Fuses - 2400 - 25,500 VAC, Current Limiting Original PDF
    15E1C8.25 Littelfuse Electrical, Specialty Fuses, Circuit Protection, FUSE M/V E-RATED 15E 8.25KV Original PDF
    15E-1C-8.25 Littelfuse E Rated Medium Voltage Fuses Original PDF
    15E-1C-8.25 Littelfuse Medium Voltage Fuses - 2400 - 25,500 VAC, Current Limiting Original PDF
    15E1CL15.5 Littelfuse Electrical, Specialty Fuses, Circuit Protection, FUSE M/V E-RATED 15E 15.5KV BOLT Original PDF

    1.5E1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5E100-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 1.5 Load Current Max. (A)1 P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A


    Original     		5E100-230 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1.5E100 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 1.5 Load Current Max. (A)1 P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A


    Original     		5E100 PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1


    Original     		NE68808 8e-16 8e-15 5e-16 8e-12 55e-12 11e-12 5e-14 29e-12 PDF

    NEC 1357

    Abstract: No abstract text available
    Text: NONLINEAR MODEL Q1 CCBPKG SCHEMATIC NE68833 CCB LCX LBX Collector LB Base CCE CBEPKG CCEPKG LE LEX Emitter BJT NONLINEAR MODEL Parameters Q1 PARAMETERS 1 Parameters Q1 UNITS Parameter Units time seconds farads IS 3.8e-16 MJC 0.48 capacitance BF 135.7 XCJC


    Original     		NE68833 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 24e-12 NEC 1357 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge


    Original     		FDB070AN06A0 FDP070AN06A0 O-220AB O-263AB PDF

    TPD2E007

    Abstract: TPD2E007YFMRG4
    Text: TPD2E007 www.ti.com SLVS796E – SEPTEMBER 2008 – REVISED AUGUST 2010 2-CHANNEL ESD-PROTECTION ARRAY FOR AC-COUPLED/NEGATIVE-RAIL DATA INTERFACES Check for Samples: TPD2E007 FEATURES 1 • 2 • • • • • YFMG4 PACKAGE BOTTOM VIEW ESD Protection Exceeds IEC61000-4-2


    Original     		TPD2E007 SLVS796E IEC61000-4-2 15-kV 15-pF 50-nA TPD2E007 TPD2E007YFMRG4 PDF

    UPA833TF

    Abstract: q2.048
    Text: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12


    Original     		UPA836TF 7e-16 9e-13 4e-12 18e-12 8e-16 8e-15 5e-16 796e-12 549e-12 UPA833TF q2.048 PDF

    32E-12

    Abstract: 32e12 35E16
    Text: NONLINEAR MODEL SCHEMATIC NE688M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 capacitance farads BF 135.7 XCJC 0.56 inductance henries


    Original     		NE688M03 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 688M03 32e12 35E16 PDF

    TSH70

    Abstract: TSH71 TSH72 TSH73 TSH74 TSH75
    Text: TSH70,71,72,73,74,75 WIDE BAND, LOW POWER OPERATIONAL AMPLIFIER WITH STANDBY FUNCTION • 3V, 5V, ±5V SPECIFICATIONS PIN CONNECTIONS top view ■ 3dB-BANDWIDTH : 90MHz ■ GAIN-BANDWIDTH PRODUCT : 70MHz ■ SLEW-RATE : 100V/µs ■ OUTPUT CURRENT : up to 55mA


    Original     		TSH70 90MHz 70MHz OT23-5, TSH70 OT23-5/SO8 TSH71 TSH72 TSH71 TSH72 TSH73 TSH74 TSH75 PDF

    AN9321

    Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
    Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76113DK8 AN9321 AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334 PDF

    OPA445E

    Abstract: 5252E 05E3
    Text: * OPA445E OPERATIONAL AMPLIFIER "MACROMODEL" SUBCIRCUIT * CREATED USING PARTS RELEASE 4.03 ON 10/04/90 AT 14:31 * * REV.B 3/21/92 BCB: adding input bias current correction * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;


    Original     		OPA445E BUE-12 305E3 OPA445 795E-3 0E-12 5E-12 5252E 05E3 PDF

    ITF86182SK8T

    Abstract: MS-012AA TB370
    Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V


    Original     		ITF86182SK8T MS-012AA) ITF86182SK8T MS-012AA TB370 PDF

    AN9321

    Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
    Text: HUFA76413D3, HUFA76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE HUFA76413D3S HUFA76413D3


    Original     		HUFA76413D3, HUFA76413D3S O-251AA O-252AA HUFA76413D3 AN9321 HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334 PDF

    AN9321

    Abstract: HUFA75831SK8 HUFA75831SK8T MS-012AA TB370
    Text: HUFA75831SK8 Data Sheet November 2000 File Number 4967 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		HUFA75831SK8 MS-012AA HUFA75831Slopment. AN9321 HUFA75831SK8 HUFA75831SK8T MS-012AA TB370 PDF

    rs808

    Abstract: HUF76112SK8T AN7254 AN7260 AN9321 AN9322 HUF76112SK8 MS-012AA TB334
    Text: HUF76112SK8 Data Sheet December 2001 7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET The HUF76112SK8 is an Application-Specific MOSFET optimized for switching when used as the upper switch in synchronous buck applications. The low gate charge and low


    Original     		HUF76112SK8 HUF76112SK8 725pF rs808 HUF76112SK8T AN7254 AN7260 AN9321 AN9322 MS-012AA TB334 PDF

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original     		HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334 PDF

    AN9321

    Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
    Text: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features


    Original     		ISL9N312ASK8T ISL9N312ASK8 MS-012AA AN9321 AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS PDF

    FDP047AN

    Abstract: FDH047AN08A0 FDI047AN08A0 FDP047AN08A0 FDH047AN08 FDH047AN FDP047
    Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs


    Original     		FDP047AN08A0 FDI047AN08A0 FDH047AN08A0 144oC, FDH047AN08A0 FDP047AN FDH047AN08 FDH047AN FDP047 PDF

    fds8878

    Abstract: No abstract text available
    Text: FDS8878 N-Channel PowerTrench MOSFET tm 30V, 10.2A, 14mΩ Features General Description „ rDS on = 14mΩ, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


    Original     		FDS8878 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ Features General Description r DS ON = 4.2mΩ, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM


    Original     		FDS8870 PDF

    76145P

    Abstract: No abstract text available
    Text: HUF76145P3, HUF76145S3S Data Sheet 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Title UF7 45P UF76 5S3 bt A, V, 045 m, an, gic vel raF wer OSTs utho eyrds ter- These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    Original     		HUF76145P3, HUF76145S3S 76145P PDF

    f14n05

    Abstract: No abstract text available
    Text: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet Title FD1 05, D14 5S P14 5 bt A, V, 00 m, anwer OSTs) utho eyrds ter- July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original     		RFD14N05, RFD14N05SM, RFP14N05 175oC TB334 f14n05 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced


    Original     		HUF76113T3ST PDF

    Untitled

    Abstract: No abstract text available
    Text: HUF75831SK8 Data Sheet August 2000 File Number 4796.2 3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS ON = 0.095Ω, VGS = 10V 5 1 2 3 4 • Simulation Models - Temperature Compensated PSPICE® and SABER


    Original     		HUF75831SK8 MS-012AA HUF75831SK8 MS-012AA 75831SK8 HUF75831SK8T. PDF