Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HUF76105SK8T Search Results

    SF Impression Pixel

    HUF76105SK8T Price and Stock

    Rochester Electronics LLC HUF76105SK8T

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF76105SK8T Bulk 919
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.33
    • 10000 $0.33
    Buy Now

    Fairchild Semiconductor Corporation HUF76105SK8T

    MOSFET Transistor, N-Channel, SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HUF76105SK8T 4,126
    • 1 $0.6309
    • 10 $0.6309
    • 100 $0.6309
    • 1000 $0.2629
    • 10000 $0.2313
    Buy Now
    Rochester Electronics HUF76105SK8T 72,500 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    HUF76105SK8T Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF76105SK8T Fairchild Semiconductor 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Original PDF
    HUF76105SK8T Fairchild Semiconductor 5.5A, 30V, 0.050 Ohm, N-Chaneel, Logic Level UltraFET Power MOSFET Original PDF

    HUF76105SK8T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet December 2001 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original
    PDF HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet January 2003 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original
    PDF HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    35E2

    Abstract: AN9321 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4719.1 Features • Logic Level Gate Drive [ /Title This N-Channel power MOSFET is • 5.5A, 30V HUF76 manufactured using the innovative • Ultra Low On-Resistance, rDS(ON = 0.050Ω


    Original
    PDF HUF76105SK8 HUF76 105SK8 35E2 AN9321 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original
    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    Untitled

    Abstract: No abstract text available
    Text: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER


    Original
    PDF HUF76105SK8

    ta7610

    Abstract: TA761 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS ON = 0.050Ω • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models


    Original
    PDF HUF76105SK8 TA76105. TB334, MS-012AA ta7610 TA761 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    AN7254

    Abstract: AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334
    Text: HUF76105SK8 in t e r r ii Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative U ltraFE T process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan
    PDF HUF76105SK8 AN7254 AN9321 AN9322 HUF76105SK8 HUF76105SK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: interrii HUF76105SK8 D ata S h e e t M ay 1999 5.54, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan
    PDF HUF76105SK8 100ms