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    Mechatronics Fan Group MR8032E12B-FSR

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    Toshiba America Electronic Components TK32E12N1,S1X

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    32E12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC 1357

    Abstract: No abstract text available
    Text: NONLINEAR MODEL Q1 CCBPKG SCHEMATIC NE68833 CCB LCX LBX Collector LB Base CCE CBEPKG CCEPKG LE LEX Emitter BJT NONLINEAR MODEL Parameters Q1 PARAMETERS 1 Parameters Q1 UNITS Parameter Units time seconds farads IS 3.8e-16 MJC 0.48 capacitance BF 135.7 XCJC


    Original     		PDF NE68833 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 24e-12 NEC 1357

    q2.048

    Abstract: No abstract text available
    Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.8e-16 MJC 0.48 135.7 XCJC 0.56 NF 1 CJS VAF 28 VJS 0.75 IKF 0.6 MJS ISE 3.8e-15 FC 0.75 NE 1.49 TF 9e-12 BR 12.3 XTF 0.36 NR 1.1 VTF 0.65 0.61 VAR 3.5 ITF IKR 0.06


    Original     		PDF UPA809T 8e-16 8e-15 5e-16 796e-12 45e-12 9e-12 32e-12 24-Hour q2.048

    UPA833TF

    Abstract: q2.048
    Text: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12


    Original     		PDF UPA836TF 7e-16 9e-13 4e-12 18e-12 8e-16 8e-15 5e-16 796e-12 549e-12 UPA833TF q2.048

    32E-12

    Abstract: 32e12 35E16
    Text: NONLINEAR MODEL SCHEMATIC NE688M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 capacitance farads BF 135.7 XCJC 0.56 inductance henries


    Original     		PDF NE688M03 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 688M03 32e12 35E16

    S21E

    Abstract: UPA809T UPA809T-T1 NE688 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		PDF UPA809T NE688 UPA809T 24-Hour S21E UPA809T-T1 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE68818 SCHEMATIC CCBPKG CCB LCX LBX LB Collector LC CCE Base CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 0.56 BF 135.7 XCJC NF 1 CJS VAF 28 VJS 0.75 IKF 0.6 MJS ISE 3.8e-15


    Original     		PDF NE68818 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 24e-12

    NE68830-T1-A

    Abstract: 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68819 NE68830 NE68833 131300
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68830-T1-A 2SC5193 2SC5194 2SC5195 NE68818 NE68819 NE68830 NE68833 131300

    NE68819

    Abstract: ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68830
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68833-T1 NE68839-T1 NE68839R-T1 NE68819 ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE68818 NE68830

    BJT BF 331

    Abstract: NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195 NE688
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68800 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 BJT BF 331 NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195

    80500 TRANSISTOR

    Abstract: LB 1639 4435 027P 157600 NE68818 2SC5191 2SC5193 2SC5194 2SC5195
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 34-6393/FAX 80500 TRANSISTOR LB 1639 4435 027P 157600 NE68818 2SC5191 2SC5193 2SC5194 2SC5195

    2SC5437

    Abstract: NE688 NE688M03 S21E 15E14
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • PACKAGE OUTLINE M03


    Original     		PDF NE688M03 NE688M03 2SC5437 NE688 S21E 15E14

    bf185

    Abstract: Lambda Sensor sensor Nox OP181 OP186 OP186GRT
    Text: a FEATURES Low Supply Current: 5.5 ␮A max Single-Supply Operation: 2.2 V to 12 V Wide Bandwidth: 160 kHz Wide Input Voltage Range Rail-to-Rail Output Swing No Phase Reversal Output Short Circuit Current: ؎10 mA 5 ␮A, Rail-to-Rail Output Operational Amplifier


    Original     		PDF OP186 OT-23 OP186 10E-6, 17E-6, 6E-12 1E-14) bf185 Lambda Sensor sensor Nox OP181 OP186GRT

    BR 123

    Abstract: NE68819 03E-12
    Text: NONLINEAR MODEL SCHEMATIC CCBPKG 0.08 pF NE68819 Q1 CCB LBX LCX 0.24 pF LB CCE 0.27 pF Base 0.19 nH 1.12 nH CBEPKG 0.3 pF LE 0.6 nH 0.5 nH Collector CCEPKG 0.3 pF LEX 0.19 nH Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter


    Original     		PDF NE68819 8e-16 8e-15 0e-12 24e-12 27e-12 12e-9 08e-12 3e-12 BR 123 NE68819 03E-12

    LB 1639

    Abstract: C 4804 transistor
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 8839R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 LB 1639 C 4804 transistor

    pt 6964

    Abstract: UPA833TF MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1 UPA836TF
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm Package Outline TS06 (Top View) LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA


    Original     		PDF UPA833TF NE688, NE685) UPA833TF UPA833TF-T1 NE68830 NE68530 UPA836TF 24-Hour pt 6964 MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1

    Untitled

    Abstract: No abstract text available
    Text: NE68830 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter Units IS 3.8e-16 MJC 0.48 time seconds BF 135.7 XCJC 0.56 capacitance


    Original     		PDF NE68830 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 24e-12 27e-12

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES Low Supply Current: 5.5 jiA max Single-Supply Operation: 2.2 V to 12 V W ide Bandwidth: 160 kHz W ide Input V oltage Range Rail-to-Rail O utput Swing No Phase Reversal O utput Short Circuit Current: ± 1 0 mA 5 |xA, Rail-to-Rail Output Operational Amplifier


    OCR Scan     		PDF 0P186 OT-23 OP186 OP186 10E-6, 17E-6, 6E-12 1E-14)

    NEC 1357

    Abstract: 1357 transistor NEC nec transistor 1357 transistor NEC 1357
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


    OCR Scan     		PDF NE688M03 NE688M03 24-Hour NEC 1357 1357 transistor NEC nec transistor 1357 transistor NEC 1357

    MJE 13031

    Abstract: 054S1 cd 4637
    Text: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA


    OCR Scan     		PDF UPA836TF NE685, NE688) UPA836TF UPA836TF-T1 UPA833TF MJE 13031 054S1 cd 4637

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES FEATURES Low Supply Current: 5.5 jiA max Single-Supply Operation: 2.2 V to 12 V W ide Bandwidth: 160 kHz W ide Input V oltage Range Rail-to-Rail O utput Swing No Phase Reversal O utput Short Circuit Current: ± 1 0 mA 5 |xA, Rail-to-Rail Output Operational Amplifier


    OCR Scan     		PDF 0P186 OT-23 1E-14) OP186 200Hz 17E-6,

    UPA833TF

    Abstract: transistor MJE 2955 uP 6308 AD
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: +— Q1 :NF = 1.7 dB TYP at f = 2 GHz, V c e = 1 V, Ic = 3 mA 2.1 ± 0.1 — ► 1.25±0.1-^


    OCR Scan     		PDF UPA833TF NE688, NE685) UPA833TF NE68830 NE68530 UPA833TF-T1 UPA836TF transistor MJE 2955 uP 6308 AD

    MJE 13031

    Abstract: LA 7693
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q 1:NF = 1.5 dB TYP at f = 2 G Hz, V c e = 3 V , lc = 3 m A 2.1 ±0.1 Q 2:NF = 1.7 dB TYP at f = 2 G Hz, V c e = 1 V, Ic = 3 mA


    OCR Scan     		PDF UPA836TF NE685, NE688) PA836TF hie-14 NE68530 NE68830 UPA836TF-T1 UPA833TF MJE 13031 LA 7693

    UPA833TF

    Abstract: Um 3562
    Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA833TF OUTLINE DIMENSIONS Units in mm FEATURES Package O utline TS06 (Top View) LOW NOISE: Q1 :NF = 1.7 dB T Y P at f = 2 G Hz, V c e = 1 V, Ic = 3 mA Q 2:N F = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA


    OCR Scan     		PDF UPA833TF NE688, NE685) NE68830 NE68530 UPA833TF-T1 24-Hour UPA833TF Um 3562

    opto 22 cjc

    Abstract: E6881 L 26400 IC
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic MAX = 100 mA 18 SOT 343 STYLE


    OCR Scan     		PDF NE688 uE68839-T1 NE68839R-T1 24-Hour opto 22 cjc E6881 L 26400 IC