f14n05
Abstract: No abstract text available
Text: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet Title FD1 05, D14 5S P14 5 bt A, V, 00 m, anwer OSTs) utho eyrds ter- July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFD14N05,
RFD14N05SM,
RFP14N05
175oC
TB334
f14n05
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f14n05l
Abstract: f14n05 14n05l 14N05 AN9321 RFD14N05L RFD14N05LSM RFD14N05LSM9A RFP14N05L TB334
Text: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives
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RFD14N05L,
RFD14N05LSM,
RFP14N05L
f14n05l
f14n05
14n05l
14N05
AN9321
RFD14N05L
RFD14N05LSM
RFD14N05LSM9A
RFP14N05L
TB334
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f14n05
Abstract: AN9321 AN9322 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 TB334 mosfet 4413
Text: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09770. Ordering Information PACKAGE 2268.5 Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFD14N05,
RFD14N05SM,
RFP14N05
TA09770.
f14n05
AN9321
AN9322
RFD14N05
RFD14N05SM
RFD14N05SM9A
RFP14N05
TB334
mosfet 4413
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f14n05
Abstract: RFD14N05 RFP14N05 AN9321 AN9322 RFD14N05SM RFD14N05SM9A TB334
Text: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives
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RFD14N05,
RFD14N05SM,
RFP14N05
TA09770.
f14n05
RFD14N05
RFP14N05
AN9321
AN9322
RFD14N05SM
RFD14N05SM9A
TB334
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f14n05
Abstract: AN7254 AN7260 AN9321 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 JEDEC TO-251AA
Text: RFD14N05, RFD14N05SM, RFP14N05 S E M I C O N D U C T O R 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-220AB • 14A, 50V SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model
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RFD14N05,
RFD14N05SM,
RFP14N05
O-220AB
175oC
O-251AA
RFP14N05
1e-30
f14n05
AN7254
AN7260
AN9321
RFD14N05
RFD14N05SM
RFD14N05SM9A
JEDEC TO-251AA
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f14n05l
Abstract: No abstract text available
Text: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives
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RFD14N05L,
RFD14N05LSM,
RFP14N05L
f14n05l
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f14n05
Abstract: RFD14N05SM AN7254 AN9321 AN9322 RFD14N05 RFD14N05SM9A TB334
Text: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding
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RFD14N05,
RFD14N05SM
TA09770.
f14n05
RFD14N05SM
AN7254
AN9321
AN9322
RFD14N05
RFD14N05SM9A
TB334
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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Untitled
Abstract: No abstract text available
Text: RFD14N05SM9A September 2013 Data Sheet Features N-Channel Power MOSFET 50V, 14A, 100 mΩ • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives
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RFD14N05SM9A
TA09770.
RFD14N05SM9A
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Untitled
Abstract: No abstract text available
Text: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding
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Original
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PDF
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RFD14N05,
RFD14N05SM
TA09770.
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f14n05
Abstract: No abstract text available
Text: RFD14N05, RFD14N05SM, RFP14N05 interrii — 1 D a ta S h e e t J u ly 1 9 9 9 , • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives
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RFD14N05,
RFD14N05SM,
RFP14N05
TA09770.
RFP14N05
AN7260,
f14n05
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Untitled
Abstract: No abstract text available
Text: RFD14N05, RFD14N05SM, RFP14N05 Semiconductor Data Sheet July 1999 14A, 50 V, 0.100 Ohm, N-Channel Power MOSFETs File Number 2268.5 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFD14N05,
RFD14N05SM,
RFP14N05
TA09770.
1e-30
73e-4
12e-6)
53e-5)
05e-3
35e-5)
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