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    1.5A 150V POWER MOSFET Search Results

    1.5A 150V POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3155-E Renesas Electronics Corporation Nch Single Power Mosfet 150V 15A 130Mohm To-220Fm Visit Renesas Electronics Corporation
    2SK3158-E Renesas Electronics Corporation Nch Single Power Mosfet 150V 30A 45Mohm To-220Ab Visit Renesas Electronics Corporation
    RJK1526DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 150V 50A 42Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    HAT2184WP-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 150V 14A 110Mohm Wpak Visit Renesas Electronics Corporation
    RJK1535DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 150V 40A 52Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation

    1.5A 150V POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDMC2523P P-Channel QFET tm -150V, -3A, 1.5Ω Features General Description ̈ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has


    Original     		PDF FDMC2523P -150V, FDMC2523P

    R015 marking

    Abstract: No abstract text available
    Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has


    Original     		PDF FDMC2523P -150V, R015 marking

    Untitled

    Abstract: No abstract text available
    Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has


    Original     		PDF FDMC2523P -150V,

    FDMC2523P

    Abstract: No abstract text available
    Text: FDMC2523P P-Channel QFET tm -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has


    Original     		PDF FDMC2523P -150V, FDMC2523P

    Untitled

    Abstract: No abstract text available
    Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has


    Original     		PDF FDMC2523P -150V,

    mosfet p-ch enhancement

    Abstract: No abstract text available
    Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has


    Original     		PDF FDMC2523P -150V, mosfet p-ch enhancement

    Untitled

    Abstract: No abstract text available
    Text: FDMC2523P P-Channel QFET -150V, -3A, 1.5Ω Features General Description „ Max rDS on = 1.5Ω at VGS = -10V, ID = -1.5A These P-Ch annel MOSFET enhancement mode power field effect transistors are produced using Fairchild's pr oprietary, planar stripe, DMOS technology. This advanced technology has


    Original     		PDF FDMC2523P -150V,

    1.5A 150V power mosfet

    Abstract: No abstract text available
    Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS3KMA-5A FS3KMA-5A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2


    Original     		PDF O-220FN 1.5A 150V power mosfet

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET ARY FS3KMA-5A FS3KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS3KMA-5A OUTLINE DRAWING


    Original     		PDF

    ultrasonic piezoelectric transducer driver

    Abstract: ultrasound sonar pulser Piezoelectric ultrasound Transducer HV7355 ultrasonic transducer circuit 1 MHz ultrasonic generator 1 Mhz ultrasound transducer circuit driver ultrasound transducer high power driver mems ultrasonic sensors circuit for piezoelectric transducer
    Text: Product Summary Sheet HV7355 Eight-Channel, High Speed, Unipolar, Ultrasound Pulser 1.5A 150V Applications: VDD AVDD VLL ►► Hand held and portable diagnostic medical ultrasound scanners ►► Piezoelectric transducer drivers ►► NDT transmitters ►► Pulse waveform


    Original     		PDF HV7355 56-Lead HV7355 HV7355K6-G HV7355, ultrasonic piezoelectric transducer driver ultrasound sonar pulser Piezoelectric ultrasound Transducer ultrasonic transducer circuit 1 MHz ultrasonic generator 1 Mhz ultrasound transducer circuit driver ultrasound transducer high power driver mems ultrasonic sensors circuit for piezoelectric transducer

    RDX030N60

    Abstract: No abstract text available
    Text: RDX030N60 Transistors 10V Drive Nch MOSFET RDX030N60 zStructure Silicon N-channel MOSFET zDimensions Unit : mm TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.


    Original     		PDF RDX030N60 O-220FM RDX030N60

    Untitled

    Abstract: No abstract text available
    Text: PA96 PA96 PA96 Power Operational Amplifier FEATURES • • • • • HIGH VOLTAGE - 300 VOLTS HIGH OUTPUT CURRENT – 1.5 AMPS 70 WATT DISSIPATION CAPABILITY 175 MHz GAIN BANDWIDTH 250 V/µ-SECOND SLEW RATE APPLICATIONS • • • • 8-PIN TO-3 PACKAGE STYLE CE


    Original     		PDF PA96U PA96U

    IRF9622

    Abstract: IRF9620 IRF9623 IRF9621 TB334
    Text: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF9620, IRF9621, IRF9622, IRF9623 -150V -200V, -200V IRF9622 IRF9620 IRF9623 IRF9621 TB334

    PA96 application circuit

    Abstract: PZT Transducer
    Text: PA96 PA96 PA96 Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS • PZT DRIVE • MAGNETIC DEFLECTION


    Original     		PDF PA96U PA96 application circuit PZT Transducer

    Untitled

    Abstract: No abstract text available
    Text: PA96 PA96 PA96 Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS • PZT DRIVE • MAGNETIC DEFLECTION


    Original     		PDF PA96U

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN HVX-2 Series Power MOSFET 2SK2665 F3S90HVX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 (Unit : mm) 900V 3A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK2665 F3S90HVX2 STO-220

    Untitled

    Abstract: No abstract text available
    Text: PA96 PA96 PA96 Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS • PZT DRIVE • MAGNETIC DEFLECTION


    Original     		PDF PA96U

    Untitled

    Abstract: No abstract text available
    Text: PA96 PA96 P r o d uPA96 c t IInnnnoovvaa t i o n FFr roomm Power Operational Amplifier FEATURES • HIGH VOLTAGE - 300 VOLTS • HIGH OUTPUT CURRENT – 1.5 AMPS • 70 WATT DISSIPATION CAPABILITY • 175 MHz GAIN BANDWIDTH • 250 V/µ-SECOND SLEW RATE APPLICATIONS


    Original     		PDF PA96U

    PA96

    Abstract: No abstract text available
    Text: ���������������������������� ���� � � � � � � � � � � � � � � � ��������������������������������������������������������������


    Original     		PDF 290kHz PA96U PA96

    PA96 application circuit

    Abstract: PA96 PA08 PA08A 800 watt audio mosfet amplifier
    Text: ���������������������������� ���� � � � � � � � � � � � � � � � ��������������������������������������������������������������


    Original     		PDF PA96U PA96 application circuit PA96 PA08 PA08A 800 watt audio mosfet amplifier

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    Untitled

    Abstract: No abstract text available
    Text: 2SK1085-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier


    Original     		PDF 2SK1085-MR O-220F15 SC-67

    Untitled

    Abstract: No abstract text available
    Text: ���������������������������� ���� � � � � � � � � � � � � � � � ��������������������������������������������������������������


    Original     		PDF PA96U

    IS-2100ARH

    Abstract: IS2100ARH IS9-2100ARH-Q IS9-2100ARH8 high frequency half bridge IS921 5962F9953602VXC
    Text: IS-2100ARH TM Data Sheet September 2001 Radiation Hardened High Frequency Half Bridge Driver File Number 9037 Features • Electrically Screened to DSCC SMD # 5962-99536 The Radiation Hardened IS-2100ARH is a high frequency, 150V Half Bridge N-Channel MOSFET Driver IC, which is a


    Original     		PDF IS-2100ARH IS-2100ARH IS2100ARH IS9-2100ARH-Q IS9-2100ARH8 high frequency half bridge IS921 5962F9953602VXC