ST-22
Abstract: No abstract text available
Text: 107-68596 Packaging Specification 08Feb10 Rev F Card Bus 1. PURPOSE 目的 Define the packaging specifiction and packaging method of Card Bus. 订定 Card Bus 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 Product Part No. Description
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08Feb10
ST-22
QR-ME-030B
ST-22
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Mini RJ21 connector
Abstract: rj21 cable connector RJ45 modular jack 6 RJ21 connector RJ21
Text: 107-68512 Packaging Specification 08Feb10 Rev W CABLE ASSY,MINI-RJ21 1. PURPOSE 目的 Define the packaging specifiction and packaging method of CABLE ASSY,MINI-RJ21. 订定 CABLE ASSY,MINI-RJ21 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围
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08Feb10
MINI-RJ21
MINI-RJ21.
MINI-RJ21
QR-ME-030B
794718125536812553177253417137231837947-X
6837947-X
1812553-X
Mini RJ21 connector
rj21 cable connector
RJ45 modular jack 6
RJ21 connector
RJ21
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WKP 3n3 M
Abstract: IEC 384-14 II 0051V Icel 183 CP
Text: WKP Vishay Draloric Ceramic AC Capacitors Class X1, 760 VAC/Class Y1, 500 VAC D Max. S Max. DESIGN Disc capacitors with epoxy coating 3 Max. RATED VOLTAGE UR X1 : 760 VAC, 50 Hz (IEC 60384-14.2) (Y1): 500 VAC, 50 Hz (IEC 60384-14.2) L = 30- 3 or L = 10 ±1
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UL1414,
11-Mar-11
WKP 3n3 M
IEC 384-14 II
0051V
Icel
183 CP
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183 CP
Abstract: No abstract text available
Text: WKP Vishay Draloric Ceramic AC Capacitors Class X1, 760 VAC/Class Y1, 500 VAC D Max. S Max. DESIGN Disc capacitors with epoxy coating 3 Max. RATED VOLTAGE UR X1 : 760 VAC, 50 Hz (IEC 60384-14.2) (Y1): 500 VAC, 50 Hz (IEC 60384-14.2) L = 30- 3 or L = 10 ±1
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UL1414,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
183 CP
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65728
Abstract: No abstract text available
Text: SQM75P03-07 Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET - 30 RDS(on) (Ω) at VGS = - 10 V 0.007 ID (A) - 75 Configuration
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SQM75P03-07
O-263
2002/95/EC
AEC-Q101
SQM75P03-07-GE3
18-Jul-08
65728
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IEC60065
Abstract: F339M X2
Text: F339M X2 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type l l w FEATURES w h • 7.5 mm to 52.5 mm lead pitch • Available loose in box taped on ammopack or reel • Compliant to RoHS directive 2002/95/EC h h' F' lt Ød
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F339M
2002/95/EC
18-Jul-08
IEC60065
F339M X2
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Untitled
Abstract: No abstract text available
Text: TS63 Vishay Sfernice Multi-Turn Surface Mount 1/4" Square Cermet Trimmers, Fully Sealed FEATURES • 0.25 W at 70 °C • Industrial grade • Multi-turn operation • A low contact resistance variation down to 2 % Rn • Low end contact resistance (1 typical)
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2002/95/EC
TS63X
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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WKP 3n3 M
Abstract: WKP vishay IEC 384-14 II 40 100 21 WKP102 DE-1-11002-A1 101 Ceramic Disc Capacitors 3n3 M Y1 capacitor VKP WKP152CPKR
Text: WKP Vishay Draloric Ceramic AC Capacitors Class X1, 760 VAC/Class Y1, 500 VAC D Max. S Max. DESIGN Disc capacitors with epoxy coating 3 Max. RATED VOLTAGE UR X1 : 760 VAC, 50 Hz (IEC 60384-14.2) (Y1): 500 VAC, 50 Hz (IEC 60384-14.2) L = 30- 3 or L = 10 ±1
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UL1414,
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
WKP 3n3 M
WKP vishay
IEC 384-14 II 40 100 21
WKP102
DE-1-11002-A1
101 Ceramic Disc Capacitors
3n3 M
Y1 capacitor VKP
WKP152CPKR
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40114
Abstract: No abstract text available
Text: TR8 Vishay Sprague Solid Tantalum Chip Capacitors MICROTAN Low ESR, Leadframeless Molded FEATURES • 0603 and 0805 footprint • Lead Pb -free face-down terminations • 8 mm tape and reel packaging available per EIA-481-1 and reeling per IEC 286-3 7" [178 mm] standard
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EIA-481-1
2002/95/EC
18-Jul-08
40114
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Untitled
Abstract: No abstract text available
Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC762CD
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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SiC762CD
11-Mar-11
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dfn4 p-channel mosfet
Abstract: No abstract text available
Text: SiP32431 Vishay Siliconix 1.0 A Slew Rate Controlled Load Switch with Reverse Blocking in SC70-6, and TDFN4 1.2 mm x 1.6 mm DESCRIPTION FEATURES The SiP32431 is a slew rate controlled high side switch with reverse blocking capability. The switch is of a low ON
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SiP32431
SC70-6,
11-Mar-11
dfn4 p-channel mosfet
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Untitled
Abstract: No abstract text available
Text: TS63 Vishay Sfernice Multi-Turn Surface Mount 1/4" Square Cermet Trimmers, Fully Sealed FEATURES • 0.25 W at 70 °C • Industrial grade • Multi-turn operation • A low contact resistance variation down to 2 % Rn • Low end contact resistance (1 typical)
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2002/95/EC
TS63X
18-Jul-08
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SiA433EDJ
Abstract: No abstract text available
Text: SPICE Device Model SiA433EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA433EDJ
18-Jul-08
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4810 mosfet
Abstract: No abstract text available
Text: SPICE Device Model SiJ458DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiJ458DP
18-Jul-08
4810 mosfet
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Si2319ES
Abstract: SQ2319ES-T1-GE3 SQ2319ES P-Channel TrenchFET Power MOSFET SOT-23 sd marking 8H S10 SOT23 MARKING 8h marking SQ2319
Text: New Product SQ2319ES Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQ2319ES
2002/95/EC
AEC-Q101
O-236
OT-23)
Si2319ES
OT-23
SQ2319ES-T1-GE3
18-Jul-08
SQ2319ES-T1-GE3
SQ2319ES
P-Channel TrenchFET Power MOSFET SOT-23
sd marking 8H
S10 SOT23 MARKING
8h marking
SQ2319
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TS63
Abstract: TS63X TS63Y TS63Z
Text: TS63 Vishay Sfernice Multi-Turn Surface Mount 1/4" Square Cermet Trimmers, Fully Sealed FEATURES • 0.25 W at 70 °C • Industrial grade • Multi-turn operation • A low contact resistance variation down to 2 % Rn • Low end contact resistance (1 typical)
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2002/95/EC
TS63X
11-Mar-11
TS63
TS63X
TS63Y
TS63Z
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65820
Abstract: No abstract text available
Text: SPICE Device Model SiS452DN Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiS452DN
18-Jul-08
65820
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S10031
Abstract: SiR802DP
Text: SPICE Device Model SiR802DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR802DP
18-Jul-08
S10031
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SiHFU014
Abstract: IRFR014 S10 diode IRFU014 SiHFR014 SiHFR014-E3
Text: IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DPAK (TO-252) Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014)
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IRFR014,
IRFU014,
SiHFR014
SiHFU014
O-252)
2002/95/EC
IRFR014
S10 diode
IRFU014
SiHFR014-E3
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR862DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR862DP
18-Jul-08
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SQM120N04
Abstract: SQM120N04-1M7L-GE3
Text: SQM120N04-1M7L Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) (Ω) at VGS = 10 V 0.0017 RDS(on) (Ω) at VGS = 4.5 V 0.0020 ID (A) • TrenchFET Power MOSFET
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SQM120N04-1M7L
AEC-Q101
O-263
2002/95/EC
SQM120N04-1M7L-GE3
18-Jul-08
SQM120N04
SQM120N04-1M7L-GE3
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Untitled
Abstract: No abstract text available
Text: SiC762CD Vishay Siliconix Integrated DrMOS Power Stage • FEATURES • Integrated Gen III MOSFETs and DrMOS compliant gate driver IC • Enables Vcore switching at 1 MHz • Easily achieve > 90 % efficiency in multi-phase, low output voltage solutions • Low ringing on the VSWH pin reduces EMI
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Original
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PDF
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SiC762CD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VISHAY MARKING LFXXX
Abstract: No abstract text available
Text: SiP4282 Vishay Siliconix 1.2 A Slew Rate Controlled Load Switch in PPAK SC75-6, and TDFN4 1.2 mm x 1.6 mm DESCRIPTION FEATURES The SiP4282 series is a slew rate controlled high side switch. The switch is of a low ON resistance P-Channel MOSFET that supports continuous current up to 1.2 A.
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SiP4282
SC75-6,
11-Mar-11
VISHAY MARKING LFXXX
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