Untitled
Abstract: No abstract text available
Text: New Product SiS452DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00325 at VGS = 10 V 35 0.0048 at VGS = 4.5 V 35 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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PDF
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SiS452DN
2002/95/EC
SiS452DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiS452DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00325 at VGS = 10 V 35 0.0048 at VGS = 4.5 V 35 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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SiS452DN
2002/95/EC
SiS452DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiS452DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00325 at VGS = 10 V 35 0.0048 at VGS = 4.5 V 35 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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SiS452DN
2002/95/EC
SiS452DN-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiS452DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00325 at VGS = 10 V 35 0.0048 at VGS = 4.5 V 35 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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SiS452DN
2002/95/EC
SiS452DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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65820
Abstract: No abstract text available
Text: SPICE Device Model SiS452DN Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiS452DN
18-Jul-08
65820
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V1660
Abstract: SiS452DN S10-0215-Rev
Text: New Product SiS452DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00325 at VGS = 10 V 35 0.0048 at VGS = 4.5 V 35 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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SiS452DN
2002/95/EC
SiS452DN-T1-GE3
18-Jul-08
V1660
S10-0215-Rev
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AN609
Abstract: 65747
Text: SiS452DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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PDF
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SiS452DN
AN609,
29-Jan-10
AN609
65747
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Untitled
Abstract: No abstract text available
Text: New Product SiS452DN Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00325 at VGS = 10 V 35 0.0048 at VGS = 4.5 V 35 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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PDF
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SiS452DN
2002/95/EC
SiS452DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiS452DN www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiS452DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Electrical Specifications Subject to Change LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater
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PDF
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LTC3350
14-Bit
38-Lead
LTC4425
12-Pin
12-Lead
3350p
com/LTC3350
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Sanyo supercapacitors
Abstract: maxwell balancing
Text: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors
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Original
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PDF
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LTC3350
14-Bit
38-Lead
LTC4425
12-Pin
12-Lead
com/LTC3350
3350f
Sanyo supercapacitors
maxwell balancing
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating
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Original
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PDF
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VMN-PT0105-1007
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Untitled
Abstract: No abstract text available
Text: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors
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Original
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PDF
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LTC3350
14-Bit
38-Lead
LTC4425
12-Pin
12-Lead
com/LTC3350
3350fa
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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PDF
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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