Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 650 16 1.4 1 2800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 07F4501 Doc. No. 5SYA1107-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with high DC link
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07F4501
5SYA1107-03
CH-5600
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Untitled
Abstract: No abstract text available
Text: Key Parameters VRRM = 4500 IFAVM = 650 IFRMS = 1000 IFSM = 16 VF0 = 1.40 rF = 1 VDClink = 2800 V A A kA V mΩ V Fast Recovery Diode 5SDF 07F4501 Doc. No. 5SYA 1107-02 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses
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07F4501
CH-5600
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Abb diode
Abstract: GTO ABB
Text: Key Parameters VRRM = 4500 IFAVM = 650 IFRMS = 1000 IFSM = 16 VF0 = 1.40 rF = 1 VDClink = 2800 V A A kA V mΩ V Fast Recovery Diode 5SDF 07F4501 Doc. No. 5SYA 1107-03 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses
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07F4501
CH-5600
Abb diode
GTO ABB
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Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 650 16 1.4 1 2800 V A kA V Fast Recovery Diode 5SDF 07F4501 mΩ V Doc. No. 5SYA 1107-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters with high DC link
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07F4501
CH-5600
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5SDF01R2501
Abstract: 5SGA 5SGA30J2501 RTK 031
Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes
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01R2501
05D2501
05D2501
15F2502
20H2501
25H2501
30J2501
20H4502
11F2501
03D4501
5SDF01R2501
5SGA
5SGA30J2501
RTK 031
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ABB GTO
Abstract: stud type diodes fjs 500
Text: Fast Recovery Diodes ABB Semiconductors AG I - O ptim ized for fast and soft turn-off. Sm all reverse recovery charge. High d i/d t capability at turn-off. Range optim ally suited for G TO applications. O ptim iertes schnelles und weiches Ausschaltverhalten.
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05D2501
11F2S01
45x100
ABB GTO
stud type diodes
fjs 500
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ABB 5SGA
Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s
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15F2502
15F2502
05D2501
01R2501
20H2501
05D2501
11F2501
25H2501
ABB 5SGA
2sh25
GTO ABB
GTO gate drive unit
2SH2501
TJM 10
5sga 20h2501
ABB GTO
R2501
5SGA 15F2502
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FSV 052
Abstract: No abstract text available
Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.
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05D2505
11F2501
07F4501
13H4501
5SDF14H4505
10H6004
01R2501
01R2502
01R2503
01R2504
FSV 052
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