Untitled
Abstract: No abstract text available
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 420 8.5 1.7 0.62 1500 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 05D2505 Doc. No. 5SYA1114-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters
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05D2505
5SYA1114-03
CH-5600
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GTO ABB
Abstract: 05d2505
Text: Key Parameters VRRM = 2500 IFAVM = 420 IFRMS = 670 IFSM = 8.5 VF0 = 1.70 rF = 0.62 VDClink = 1500 V A A kA V Fast Recovery Diode 5SDF 05D2505 mΩ V Doc. No. 5SYA 1114-03 July 98 •Patented free-floating silicon technology •Low on-state and switching losses
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05D2505
CH-5600
GTO ABB
05d2505
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RCD snubber
Abstract: 05d2505
Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 2500 420 8.5 1.7 0.62 1500 V A kA V Fast Recovery Diode 5SDF 05D2505 mΩ V Doc. No. 5SYA 1114-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO converters
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Original
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PDF
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05D2505
CH-5600
RCD snubber
05d2505
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FSV 052
Abstract: No abstract text available
Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.
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OCR Scan
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PDF
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05D2505
11F2501
07F4501
13H4501
5SDF14H4505
10H6004
01R2501
01R2502
01R2503
01R2504
FSV 052
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