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    Infineon Technologies AG BTS4175SGAXUMA1

    IC PWR SWITCH N-CHAN 1:1 DSO-8
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    DigiKey BTS4175SGAXUMA1 Cut Tape 19,731 1
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    Mouser Electronics BTS4175SGAXUMA1 7,179
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    Newark BTS4175SGAXUMA1 Bulk 618 1
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    Sullins Connector Solutions PRPC005SGAN-M71RC

    CONN HEADER R/A 5POS 2.54MM
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    DigiKey PRPC005SGAN-M71RC Bag 5,253 1
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    RECOM Power Inc RAC02-05SGA

    AC/DC CONVERTER 5V 2W
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    DigiKey RAC02-05SGA Tube 2,116 1
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    Mouser Electronics RAC02-05SGA 31
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    TME RAC02-05SGA 57 1
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    Ozdisan Elektronik RAC02-05SGA 137
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    RECOM Power Inc RAC03-05SGA

    AC/DC CONVERTER 5V 3W
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    DigiKey RAC03-05SGA Tube 1,822 1
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    Newark RAC03-05SGA Bulk 20
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    TME RAC03-05SGA 187 1
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    Richardson RFPD RAC03-05SGA 20
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    Sager RAC03-05SGA 1
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    TE Connectivity CSE-SGAM-305-SGAM

    CBL ASSY SMA PLUG TO PLUG 12"
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    DigiKey CSE-SGAM-305-SGAM Bag 827 1
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    Avnet Americas CSE-SGAM-305-SGAM Bulk 0 Weeks, 5 Days 250
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    Mouser Electronics CSE-SGAM-305-SGAM 896
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    Interstate Connecting Components CSE-SGAM-305-SGAM
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    Master Electronics CSE-SGAM-305-SGAM 250
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    New Advantage Corporation CSE-SGAM-305-SGAM 200 1
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    Find more 5SGA price and stock on Findchips.com

    5SGA Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5SGA 06D4502 ABB Semiconductors Asymmetric Gate turn-off Thyristor Original PDF
    5SGA06D4502 ABB Semiconductors Asymmetric Gate turn-off Thyristor Original PDF
    5SGA 15F2502 ABB Semiconductors Thyristor, GTO, 2500V Forward Blocking Voltage, 550A On-State Current, 50A Holding Current, 2200A RMS Current Original PDF
    5SGA15F2502 ABB Semiconductors Gate turn-off Thyristor Original PDF
    5SGA 15F25021 ABB Semiconductors Thyristor, GTO, 2500V Forward Blocking Voltage, 550A On-State Current, 50A Holding Current, 2200A RMS Current Original PDF
    5SGA 20H2501 ABB Semiconductors Thyristor, GTO, 2500V Forward Blocking Voltage, 830A On-State Current, 50A Holding Current, 2200A RMS Current Original PDF
    5SGA20H2501 ABB Semiconductors Gate turn-off Thyristor Original PDF
    5SGA 20H4502 ABB Semiconductors Thyristor, GTO, 4500V Forward Blocking Voltage, 710A On-State Current, 50A Holding Current, 2200A RMS Current Original PDF
    5SGA20H4502 ABB Semiconductors Gate turn-off Thyristor Original PDF
    5SGA 25H2501 ABB Semiconductors Thyristor, GTO, 2500V Forward Blocking Voltage, 830A On-State Current, 50A Holding Current, 2200A RMS Current Original PDF
    5SGA25H2501 ABB Semiconductors Gate turn-off Thyristor Original PDF
    5SGA 30J2501 ABB Semiconductors Thyristor, GTO, 2500V Forward Blocking Voltage, 1.3A On-State Current, 100A Holding Current, 2200A RMS Current Original PDF
    5SGA30J2501 ABB Semiconductors Gate turn-off Thyristor Original PDF
    5SGA 30J4502 ABB Semiconductors Thyristor, GTO, 4500V Forward Blocking Voltage, 930A On-State Current, 50A Holding Current, 2200A RMS Current Original PDF
    5SGA30J4502 ABB Semiconductors Asymmetric Gate turn-off Thyristor Original PDF
    5SGA 30J4505 ABB Semiconductors Thyristor, GTO, 4500V Forward Blocking Voltage, 1A On-State Current, 50A Holding Current, 2200A RMS Current Original PDF
    5SGA30J4505 ABB Semiconductors Asymmetric Gate turn-off Thyristor Original PDF
    5SGA 40L4501 ABB Semiconductors Thyristor, GTO, 4500V Forward Blocking Voltage, 1A On-State Current, 100A Holding Current, 2200A RMS Current Original PDF
    5SGA40L4501 ABB Semiconductors Gate turn-off Thyristor Original PDF

    5SGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GTO ABB 5SGA 2046

    Abstract: IG 2200 19
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4505 5SYA1204-04 CH-5600 GTO ABB 5SGA 2046 IG 2200 19

    vt 1202

    Abstract: ABB thyristor 5 IP350K gto 5sga
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 24 2.20 0.60 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4502 CH-5600 vt 1202 ABB thyristor 5 IP350K gto 5sga

    gto 5sga

    Abstract: GTO thyristor ABB ABB thyristor ABB thyristor 5 gto Gate Drive circuit ABB 5SGA ABB 5SGA 20H2501
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 20H2501 mΩ V Doc. No. 5SYA 1205-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 20H2501 CH-5600 gto 5sga GTO thyristor ABB ABB thyristor ABB thyristor 5 gto Gate Drive circuit ABB 5SGA ABB 5SGA 20H2501

    5SGA40L4501

    Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 2.10 0.58 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 CH-5600 5SGA40L4501 ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 2500 ITGQM = 1500 ITSM = 10 VT0 = 1.55 rT = 0.63 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 15F2502 mΩ V Doc. No. 5SYA 1214-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 15F2502 CH-5600

    5SGA30J2501

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 2500 ITGQM = 3000 ITSM = 30 VT0 = 1.50 rT = 0.33 VDClink = 1400 V A kA V mΩ V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA 1213-02 Feb.97 Features • Patented free-floating technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J2501 0E-03 0E-02 0E-01 CH-5600 5SGA30J2501

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 2.10 rT = 0.58 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 40L4501 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 25 VT0 = 1.90 rT = 0.53 VDClink = 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 30J4505 CH-5600

    press pack thyristor 10000 VDRM

    Abstract: LS 7313 S 5SGA40L4501 LS 7313 - S
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 5SYA1208-02 CH-5600 press pack thyristor 10000 VDRM LS 7313 S 5SGA40L4501 LS 7313 - S

    25H2501

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA1206-01 Dec. 04 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 25H2501 5SYA1206-01 CH-5600 25H2501

    GTO thyristor ABB

    Abstract: ABB 5SGA ABB GTO ABB thyristor 5
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 1500 10 1.55 0.63 1400 V A kA V Gate turn-off Thyristor 5SGA 15F2502 mΩ V Doc. No. 5SYA 1214-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 15F2502 CH-5600 GTO thyristor ABB ABB 5SGA ABB GTO ABB thyristor 5

    20H2501

    Abstract: 5sga20h2501
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 20H2501 Doc. No. 5SYA1205-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode


    Original     		PDF 20H2501 5SYA1205-01 CH-5600 20H2501 5sga20h2501

    RCD snubber

    Abstract: ABB GTO gate unit
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 600 3x103 1.9 3.5 2800 V A A V mW V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Doc. No. 5SYA1236-00 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses


    Original     		PDF 06D4502 5SYA1236-00 CH-5600 RCD snubber ABB GTO gate unit

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 5SYA1208-02 CH-5600

    1206-01

    Abstract: 25H25 25H2501 ABB 5SGA ABB thyristor 5 GTO ABB GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA 1206-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 25H2501 CH-5600 1206-01 25H25 25H2501 ABB 5SGA ABB thyristor 5 GTO ABB GTO thyristor ABB

    A125

    Abstract: B125 C125 D125
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 2500 1500 10x103 1.45 0.90 1400 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA1214-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 15F2502 5SYA1214-02 CH-5600 A125 B125 C125 D125

    abb 2040

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = 2500 V = 3000 A = 30 kA = 1.5 V = 0.33 mΩ = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA1213-02 Jan. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J2501 5SYA1213-02 CH-5600 abb 2040

    1419

    Abstract: capacitor abb
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 24x103 2.2 0.6 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 30J4502 Doc. No. 5SYA1202-03 Jan. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4502 5SYA1202-03 CH-5600 1419 capacitor abb

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 2500 ITGQM = 2500 ITSM = 16 VT0 = 1.66 rT = 0.57 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA 1206-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 25H2501 CH-5600

    ABB 5SGA

    Abstract: ABB thyristor 5 GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 25 1.90 0.53 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 30J4505 CH-5600 ABB 5SGA ABB thyristor 5 GTO thyristor ABB

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 2.20 rT = 0.60 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 30J4502 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: 5SGA30L4502 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)4.5k V(RRM) Max. (V)17 I(T) Rated Maximum (A)790± @Temp. (øC) (Test Condition)85# I(TSM) Max. (A)24 @ t(w) (s) (Test Condition)10m I(GT) Max. (A) V(GT) Max.(V) I(H) Max. (A) Holding Current


    Original     		PDF 5SGA30L4502 StyleTO-200var120 Code4-52

    5sga20h4502

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 2000 ITSM = 13 VT0 = 1.80 rT = 0.85 VDClink = 2200 V A kA V Gate turn-off Thyristor 5SGA 20H4502 mΩ V Doc. No. 5SYA 1210-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 20H4502 CH-5600 5sga20h4502

    GTO Snubber Capacitor

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 2500 ITGQM = 2000 ITSM = 16 VT0 = 1.66 rT = 0.57 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 20H2501 mΩ V Doc. No. 5SYA 1205-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 20H2501 CH-5600 GTO Snubber Capacitor