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    10H6004 Search Results

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    10H6004 Price and Stock

    ABB Low Voltage Products and Systems 5SDF 10H6004

    Diode: hockey-puck rectifying; 6kV; 1.1kA; Ø94,5/62,8mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 5SDF 10H6004 1
    • 1 $982.09
    • 10 $829.42
    • 100 $829.42
    • 1000 $829.42
    • 10000 $829.42
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    10H6004 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGCT thyristor ABB

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 Doc. No. 5SYA 1226-03 Aug. 2000 • Direct fiber optic control • Fast response ∆tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 10H6004 CH-5600 IGCT thyristor ABB

    Untitled

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters


    Original     		PDF 10H6004 5SYA1109-03 CH-5600

    IGCT abb

    Abstract: ka 70 05
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Sep. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 10H6004 5SYA1226-03 10H6004 CH-5600 IGCT abb ka 70 05

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 5500 ITGQM = 900 ITSM = 8 VT0 = 1.5 rT = 1.64 VDClink = 3300 V A kA V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 PRELIMINARY Doc. No. 5SYA 1226-02 Feb. 99 • • • • • • • • Features Direct fiber optic control


    Original     		PDF 10H6004 CH-5600

    ABB Semiconductors

    Abstract: RCD snubber
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V mΩ Ω V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters


    Original     		PDF 10H6004 5SYA1109-02 CH-5600 ABB Semiconductors RCD snubber

    Abb diode 6000 A

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 6000 IFAVM = 1100 IFRMS = 1700 IFSM = 18 VF0 = 1.50 rF = 0.6 VDClink = 3800 V A A kA V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA 1109-02 Feb. 99 •Patented free-floating silicon technology •Low on-state and switching losses


    Original     		PDF 10H6004 CH-5600 Abb diode 6000 A

    RCD snubber

    Abstract: No abstract text available
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 6000 1100 18 1.5 0.6 3800 V A kA V Fast Recovery Diode 5SDF 10H6004 mΩ V Doc. No. 5SYA 1109-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in high-voltage GTO converters


    Original     		PDF 10H6004 CH-5600 RCD snubber

    abb gto characteristic

    Abstract: No abstract text available
    Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters


    Original     		PDF 10H6004 5SYA1109-02 CH-5600 abb gto characteristic

    IGCT thyristor ABB

    Abstract: igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Jan. 02 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 10H6004 5SYA1226-03 co1226-03 CH-5600 IGCT thyristor ABB igct abb IGCT gct thyristor WAGO IGCT thyristor HFBR-2528 IGCT thyristor current max high power igct abb

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDClink = = = = = = 5500 900 7.5 1.65 2 3300 V A kA V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 10H6004 mΩ Ω V Doc. No. 5SYA1226-03 Nov. 01 • Direct fiber optic control • Fast response tdon < 3 µs, tdoff < 6 µs


    Original     		PDF 10H6004 5SYA1226-03 10H6004 CH-5600

    diode sy 170

    Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
    Text: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno­ logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.


    OCR Scan     		PDF

    FSV 052

    Abstract: No abstract text available
    Text: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus­ schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.


    OCR Scan     		PDF 05D2505 11F2501 07F4501 13H4501 5SDF14H4505 10H6004 01R2501 01R2502 01R2503 01R2504 FSV 052