Untitled
Abstract: No abstract text available
Text: WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 125, 140, 150, 200, 250, 300ns Page Write Cycle Time 10ms Max. JEDEC Approved Packages Data Polling for End of Write Detection Hardware and Software Data Protection
|
Original
|
WME128K8-XXX
128Kx8
300ns
MIL-STD-883
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900* Weight FEATURES Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical Access Times of 70ns (SRAM) and 120ns (FLASH)
|
Original
|
WSF128K16-XXX
128Kx16
WSF128K16-H1X
WSF128K16-XG1UX1
120ns
66-pin,
ICCx32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 125 and 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
|
Original
|
WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
120ns
125ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
|
Original
|
WSF512K16-XXX
512KX16
120ns
ICCx16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES Access Times of 125 and 150ns Automatic Page Write Operation MIL-STD-883 Compliant Devices Available Page Write Cycle Time: 10ms Max Packaging: Data Polling for End of Write Detection
|
Original
|
WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
120ns
125ns
MIL-PRF-38534
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES Access Times of 35ns (SRAM) and 90ns (FLASH) 100,000 Erase/Program Cycles Minimum Access Times of 70ns (SRAM) and 120ns (FLASH) Sector Architecture
|
Original
|
WSF512K16-XXX
512KX16
120ns
ICCx16
MIL-STD-883
MIL-PRF-38534
|
PDF
|
WME128K8-XXX
Abstract: No abstract text available
Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 120, 140, 150, 200, 250, 300ns Automatic Page Write Operation JEDEC Approved Packages • Internal Control Timer • 32 pin, Hermetic Ceramic, 0.600" DIP
|
Original
|
WME128K8-XXX
128Kx8
300ns
MIL-STD-883
120ns
06HYX
01HXX
250ns
02HXX
WME128K8-XXX
|
PDF
|
SD10
Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Text: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins
|
Original
|
WSF512K16-XXX
512KX16
120ns
120ns
01HXX
02HXX
SD10
SD12
SD13
SD14
SD15
WSF512K16-XXX
WSF512K16-XG2X
|
PDF
|
SD10
Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Text: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)
|
Original
|
WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX1
WSF128K16-XG1TX
66-pin,
SD10
SD13
SD14
SD15
WSF128K16-XXX
scs 2003
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WMS128K8-XXX HI-RELIABILITY PRODUCT 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 pending FEATURES • Access Times 70, 85, 100, 120ns ■ Commercial, Industrial and Military Temperature Range ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 32 lead Ceramic SOJ (Package 101)
|
Original
|
WMS128K8-XXX
128Kx8
120ns
MIL-STD-883
01HUX*
02HUX*
03HUX*
04HUX*
01HTX*
02HTX*
|
PDF
|
Untitled
Abstract: No abstract text available
Text: a WMF512K8-XXX5 WHITE /MICROELECTRONICS 512Kx8 MONOLITHIC FLASH, SM D 5962-96692 FEATURES • A ccess Tim es of 70, 90, 120, 150ns ■ Organized as 512Kx8 ■ Packaging • 32 pin, Herm etic Ceramic, 0.600" DIP Package 300 • 3 2 lead, Herm etic Ceram ic, 0.400" S O J (Package 101)
|
OCR Scan
|
WMF512K8-XXX5
512Kx8
150ns
512Kx8
64KByte
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WE32K32-XXX M/HITE /M ICROELECTRONICS 32Kx32 EEPROM MODULE, S M D 5962-94614 FEATURES • A c c e s s T im e s o f 9 0 ,1 2 0 ,1 50ns ■ C o m m ercial, Ind ustrial and M ilita ry Tem perature Ranges ■ M IL-STD -883 Com pliant D e vice s A va ila b le ■ A u to m atic Page W rite Operation
|
OCR Scan
|
WE32K32-XXX
32Kx32
66-pin,
28Kx8
64Kx16
128Kx8
150ns
120ns
01HXX
02HXX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WHITE /M IC R O E L E C T R O N IC S W M S 2 5 6 K 1 6 -X X X 256Kx16 MONOLITHIC SRAM FEATURES • A ccess Times 17, 20, 25, 35ns Data I/O Compatible w ith 3.3V devices ■ MIL-STD-883 Compliant Devices Available 2V Minim um Data Retention for battery back up operation
|
OCR Scan
|
256Kx16
MIL-STD-883
256Kx16
WMS256K16-XXX
AO-17
256Kx
01HXX*
02HXX*
03HXX*
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HHITE /M ICRO ELECTRONICS W MF128K8-XXX5 128Kx8 MONOLITHIC FLASH, SMD 5962-96690 FEATURES • Access Tim es of 60, 70, 9 0 ,1 2 0 ,150ns ■ Organized as 128Kx8 ■ Packaging ■ Commercial, Industrial and M ilita ry Tem perature Ranges • 32 lead, Hermetic Ceramic, 0.400" S O J Package 101
|
OCR Scan
|
MF128K8-XXX5
128Kx8
150ns
128Kx8
16KByte
04HXX
05HXX
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: C2 WE32K32-XXX M/HITE /M IC R O E L E C T R O N IC S 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES EEPROM MODULES • Access Times of 9 0 ,1 2 0 ,150ns ■ Autom atic Page W rite Operation ■ MIL-STD-883 Compliant Devices Available ■ Page W rite Cycle Time: 10ms Max
|
OCR Scan
|
WE32K32-XXX
32Kx32
150ns
MIL-STD-883
66-pin,
400-------------------ORGANIZATION,
64Kx16
128Kx8
120ns
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T7 512Kx32 SRAM MODULE P R E L IM IN A R Y * FEATURES • ■ WS512K32-XXX M/HITE /M IC R O E LE C TR O N IC S ■ O r g a n i z e d a s 5 1 2 K x 3 2 , U s e r C o n f i g u r a b l e as 1 0 2 4 K x 1 6 o r 2M x8 ■ C o m m e rc ia l, In d u s tria l an d M ilit a r y T e m p e ra tu re R anges
|
OCR Scan
|
WS512K32-XXX
512Kx32
120nS
100nS
01HXX*
02HXX*
03HXX*
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T T WS512K8-XCX WHITE /M IC R O E L E C T R O N IC S 512Kx8 SRAM MODULE FEATURES FIG. 1 • Access Tim es 55 to 120nS ■ S tandard M ic ro c irc u it D raw ing, 5962-92078 PIN CONFIGURATION TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 ^ ■ MIL-STD-883 C o m p liant Devices A v a ila b le
|
OCR Scan
|
WS512K8-XCX
512Kx8
120nS
MIL-STD-883
-550C
120nS
100nS
01HXX
02HXX
03HXX
|
PDF
|
7A4L
Abstract: WS256K8
Text: T T WS256K8-XCX I/WHITE /MICROELECTRONICS 256Kx8 SRAM MODULE FEATURES FIG. 1 • Access T im e s 55 to 120nS PIN CONFIGURATION TOP VIEW ^ 32 n vcc 31 J A 15 30 j A 17 29 J W E 28 1 A 13 27 ;] as 26 J A9 25 H A11 24 □ OE S ta n d a rd M ic ro c irc u it D ra w in g , 5962-93157
|
OCR Scan
|
WS256K8-XCX
256Kx8
120nS
IL-STD-883
120nS
100nS
01HXX
02HXX
03HXX
04HXX
7A4L
WS256K8
|
PDF
|
SF512K16
Abstract: No abstract text available
Text: WHITE / M I C R O E L E C T R O N I C S W SF512K16-XXX 512Kx16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES FLASH MEMORY FEATURES • A ccess Tim es o f 35ns SRAM and 90ns (FLASH] ■ 10,000 E rase/Program Cycles ■ A ccess Tim es o f 70ns (SRAM) and 120ns (FLASH)
|
OCR Scan
|
SF512K16-XXX
512Kx16
120ns
68-lead,
120ns
01HXX
02HXX
01HMX
SF512K16
|
PDF
|
Untitled
Abstract: No abstract text available
Text: I/M-IITE /M IC R O ELEC T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 P IN C O N F IG U R A T IO N T O P V IE W L 1 A16 r 2 A15 [7 3 32 A12 4 29 A7C 5 A6 [T 6 A5 E 7
|
OCR Scan
|
WE512K8,
WE256K8,
WE128K8-XCX
512Kx8
WE512K8-XCX,
150nS,
200nS,
250nS,
300nS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TT W S512K8-XCX 1/1/HITE / M I C R O E L E C T R O N I C S 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES FIG. 1 PIN CONFIGURATION TOP VIEW A18 C 1 A 1 6C 2 ^ 32 31 30 □ A17 A I2 C 4 A7C 5 29 □ WË A6 C 6 27 □ A8 A5 C 7 26 □ A9 3 A ccess Tim es 55, 70, 8 5 , 1 0 0 , 120ns
|
OCR Scan
|
S512K8-XCX
512Kx8
120ns
MIL-STD-883
01HXX
02HXX
03HXX
04HXX
05HXX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ça WHITE /MICROELECTRONICS WF4M32-XXX5 4MX32 5V FLASH MODULE, SMD 5962-97531 pending PRELIMINARY* FEATURES • Access Times of 1 0 0 ,1 2 0 ,150ns ■ User configurable as 8Mx16 or 16Mx8 in HIP and G4T packages. ■ Packaging: • 66-pin, PGA Type, 1.385 inch square, Hermetic Ceramic
|
OCR Scan
|
WF4M32-XXX5
4MX32
150ns
8Mx16
16Mx8
66-pin,
01HXX*
64KByte
120ns
02HXX*
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ça W S512K32-XXX WHITE /MICROELECTRONICS 512Kx32 SRAM MODULE, SMD 5962-94611 P R E L IM IN A R Y * FEATURES • A cce ss Times of 70, 8 5 ,1 0 0 ,120ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ TTL Compatible Inputs and Outputs
|
OCR Scan
|
S512K32-XXX
512Kx32
120ns
66-pin,
01HZX
100ns
02HZX
03HZX
04HZX
|
PDF
|
Untitled
Abstract: No abstract text available
Text: WF2M16-XXX5 •lì HI-REÜA8IUTY PBÛÔUCï 2M x 16 FLASH MODULE, S M D 5962-97610 pending P R ELIM IN A R Y * FEA TU R ES D ata P o llin g and T o g g le B it fe a tu re fo r d e te c tio n of prog ram ■ A c c ess T im e s of 90, 120, 150ns ■ or era se cycle com p letio n .
|
OCR Scan
|
WF2M16-XXX5
150ns
64KByte
120ns
02HXX*
03HXX*
|
PDF
|
