ROSIN FLUX TYPE ROL0
Abstract: FLUX TYPE ROL0 CTL5227-074-019 01-Mar-10 5103308-1
Text: 501-325 Qualification Test Report 01Mar10 Rev A All Paragraphs Revised AMP-LATCH* and IDC Header Connectors, .100 X .100 Inch Grid 1. INTRODUCTION 1.1. Purpose Testing was performed on AMP-LATCH* and IDC Header Connectors to determine their conformance to the requirements of Product Specification 108-40018, Revision E.
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01Mar10
14Sep95
03Nov95,
28Jan10
23Feb10.
CTL5227-074-019
EA20100084Tminutes
ROSIN FLUX TYPE ROL0
FLUX TYPE ROL0
01-Mar-10
5103308-1
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EIA-364-29
Abstract: EIA-364-20 EIA-364-21 EIA-364-31 EIA-364-32 01-Mar-10
Text: Product Specification 108-40018 01Mar10 Rev E AMP-LATCH* and IDC Header Connectors, .100 X .100 Inch Grid 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for AMP-LATCH* universal and low profile, and IDC standard and low profile .100 X .100 inch grid headers, right angle and vertical
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01Mar10
03Nov95,
23Feb10.
EIA-364-29
EIA-364-20
EIA-364-21
EIA-364-31
EIA-364-32
01-Mar-10
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thermistor ntc
Abstract: E78996 bridge UPS circuit diagram pcb 50mt060whta 50MT060WHTAPB
Text: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)
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50MT060WHTAPbF
E78996
2002/95/EC
11-Mar-11
thermistor ntc
E78996 bridge
UPS circuit diagram pcb
50mt060whta
50MT060WHTAPB
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Untitled
Abstract: No abstract text available
Text: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)
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50MT060WHTAPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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full bridge driver 600v
Abstract: 20MT120UFP ultrafast igbt S610A
Text: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
E78996
2002/95/EC
18-Jul-08
full bridge driver 600v
20MT120UFP
ultrafast igbt
S610A
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SQ4401DY-T1-GE3
Abstract: No abstract text available
Text: SQ4401DY Vishay Siliconix Automotive P-Channel 40 V D-S 150 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 40 RDS(on) (Ω) at VGS = - 10 V 0.014 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = - 4.5 V
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SQ4401DY
2002/95/EC
AEC-Q101
SQ4401DY-T1-GE3
18-Jul-08
SQ4401DY-T1-GE3
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40MT120UHAPBF
Abstract: ultrafast igbt 40MT120UHAP
Text: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA
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40MT120UHAPbF,
40MT120UHTAPbF
E78996
2002/95/EC
18-Jul-08
40MT120UHAPBF
ultrafast igbt
40MT120UHAP
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SQ4850EY-T1-GE3
Abstract: C40r SQ4850EY-T1_GE3
Text: SQ4850EY Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.022 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = 4.5 V 0.031
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SQ4850EY
2002/95/EC
AEC-Q101
SQ4850EY-T1-GE3
18-Jul-08
SQ4850EY-T1-GE3
C40r
SQ4850EY-T1_GE3
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65890
Abstract: No abstract text available
Text: SPICE Device Model Si5906DU Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si5906DU
18-Jul-08
65890
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AN609
Abstract: IRF540S SiHF540S
Text: IRF540S_RC, SiHF540S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF540S
SiHF540S
AN609,
01-Mar-10
AN609
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SQD50P06-15L-GE3
Abstract: SQD50P06-15L
Text: SQD50P06-15L Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 60 RDS(on) (Ω) at VGS = - 10 V 0.015 RDS(on) (Ω) at VGS = - 4.5 V 0.020 ID (A) • TrenchFET Power MOSFET
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SQD50P06-15L
O-252
2002/95/EC
AEC-Q101
SQD50P06-15L-GE3
18-Jul-08
SQD50P06-15L-GE3
SQD50P06-15L
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S100476
Abstract: No abstract text available
Text: SPICE Device Model SiR846DP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR846DP
18-Jul-08
S100476
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiA425EDJ Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiA425EDJ
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: V ishay I ntertechn o l o g y, I nc . I INNOVAT AND TEC O L OGY CMB 0207 N HN MELF RESISTOR O 19 62-2012 Resistors - Special Carbon Film Technology High Pulse Load MELF Resistor Key Benefits • Approved to the safety requirements of IEC 60065, 14.1.a* = VDE 0860, 14.1.a ,
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01-Mar-10
VMN-PT9197-1203
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CVCO45CL-0900-0940
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 900 MHz 4.5 VDC 5.0 5.25 VDC +3.0 dBm Lower Frequency: Upper Frequency: 940 Tuning Voltage: 0.5 Supply Voltage: 4.75 Output Power: -3.0 Supply Current: MHz 17 nd mA Harmonic Suppression 2 Harmonic :
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10kHz
100kHz
CVCO45CL-0900-0940
01-Mar-10
CVCO45CL-0900-0940
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igbt with 339 ic
Abstract: No abstract text available
Text: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA
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40MT120UHAPbF,
40MT120UHTAPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
igbt with 339 ic
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Untitled
Abstract: No abstract text available
Text: 50MT060ULSTAPbF Vishay High Power Products "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses
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50MT060ULSTAPbF
E78996
2002/95/EC
11-Mar-11
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40MT120UHAPBF
Abstract: No abstract text available
Text: 40MT120UHAPbF, 40MT120UHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Ultrafast NPT IGBT , 80 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • Square RBSOA
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40MT120UHAPbF,
40MT120UHTAPbF
E78996
2002/95/EC
11-Mar-11
40MT120UHAPBF
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Si4712
Abstract: Si4712DY
Text: SPICE Device Model Si4712DY Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Si4712DY
18-Jul-08
Si4712
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4026 datasheet
Abstract: AN609 IRF530 SiHF530 IRF530R
Text: IRF530_RC, SiHF530_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRF530
SiHF530
AN609,
01-Mar-10
4026 datasheet
AN609
IRF530R
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SQJ456EP-T1-GE3
Abstract: SQJ456EP
Text: SQJ456EP Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) at VGS = 10 V 0.028 RDS(on) (Ω) at VGS = 6 V 0.033 ID (A) 9.1 Configuration Single D PowerPAK SO-8L Single m 5m 6.1 • Halogen-free According to IEC 61249-2-21
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SQJ456EP
2002/95/EC
AEC-Q101
SQJ456EP-T1-GE3
18-Jul-08
SQJ456EP-T1-GE3
SQJ456EP
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Untitled
Abstract: No abstract text available
Text: 20MT120UFP Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 40 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse
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20MT120UFP
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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rmkht0805
Abstract: sfernice
Text: RMKHT CNHT Vishay Sfernice High Temperature (215 °C) Wirebondable Chip Resistors and Resistor Networks FEATURES • Operating temperature range: - 55 °C; + 215 °C • Storage temperature: - 55 °C; + 230 °C • Wirebondable (aluminum pads) • Large selection of sizes available
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18-Jul-08
rmkht0805
sfernice
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vishay 0207
Abstract: DIN iec 286-3 part 1 IEC 61760-1 IEC 60062 4K7 1 melf vishay melf CMB 0207
Text: CMB 0207 Vishay Beyschlag High Pulse Load MELF Resistors FEATURES REG.-Nr. B583 CMB 0207 specialty MELF resistors with advanced pulse load capability are the perfect choice for the protection of circuitry with signal and mains input lines from surge pulses.
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AEC-Q200
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vishay 0207
DIN iec 286-3 part 1
IEC 61760-1
IEC 60062
4K7 1 melf
vishay melf
CMB 0207
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