"Parity Checker"
Abstract: F100K SY100S360 SY100S360DC SY100S360FC D0G22 ha13
Text: * DUAL PARITY CHECKER/GENERATOR SYNERGY S E M IC O N D U C T O R FEATURES SY100S360 DESCRIPTION • Max. propagation delay of 2200ps I e e min. of -70mA ■ ■ ESD protection of 2000V ■ Industry standard 100K ECL levels ■ Extended supply voltage option:
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SY100S360
2200ps
of-70mA
F100K
SY100S360
T0013ai
000223b
"Parity Checker"
F100K
SY100S360DC
SY100S360FC
D0G22
ha13
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Untitled
Abstract: No abstract text available
Text: Vertical Throught-Mount Plugs 0.64 mm 0.025 in. Description Vertical Through-Mount Plug 80 CONTACTS DIMA DIM B (4) O PLATED THRU HOLES 00000400 dooooooooooo O O O O O O O O O O O O O O O O O O O O ooooo o o o o o o c o o o o o o o o o o o o o o 5 QOOOOOOOOOOOO
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TA-932
BUS-12-105
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM540400 Series 4M X 40<bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each
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HYM540400
40-bit
HY5116400
22/iF
HYM540400M/LM/TM/LTM
HYM540400MG/LMG/TMG/LTMG
HYM540400M/MG
HYM54Ã
400TM/TMG
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2SJ376
Abstract: W-30 19-MOSFET fhvx
Text: 6 0 V ^ U -X /19-MOSFET 60V SERIES POWER MOSFET . P -3 ^ *J k O U T L IN E D IM E N S IO N S 2SJ376 F 3 0 F 6 P -60V-30A I R A TIN G S Absolute Maximum R atings « a 12 Symbol Item il Conditions IS R atings fi *. fö U n it S to ra g e Tem p e ra tu re
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/19-mosfet
2SJ376
f30f6p)
-60v-30a
FTO-220
-24Vv
2SJ376
W-30
19-MOSFET
fhvx
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o l o g y O D APT6040BN APT5540BN APT6045BN APT5545BN O s POWER MOS IV' 600V 550V 600V 550V 18.0A 18.0A 17.0A 17.0A 0.40Q 0.40Í2 0.45ÍÍ 0.45Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M0SFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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APT6040BN
APT5540BN
APT6045BN
APT5545BN
5540BN
6040BN
5545BN
6045BN
O-247AD
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L7C164PC20
Abstract: No abstract text available
Text: L 7 C 1 6 4 /1 6 6 16K x 4 Static RAM DESCRIPTION FEATURES □ 16K x 4 Static RAM with Common I/O □ □ □ □ Auto-Powerdown Design Advanced CMOS Technology High Speed — to 12 ns maximum Low Power Operation Active: 325 mW typical at 25 ns Standby: 400 yiW typical
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L7C164/166
L7C164
L7C166
MIL-STD-883,
CY7C164/166
22/24-pin
24-pin
22/28-pin
L7C164PC20
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ZD 103
Abstract: burndy sms ZD 103 ma CZ 142 tme 126 dc block CZ-130 ZD 22 508-B36-4850 32Kx64 32kxS
Text: ^EDI, EDI8F6432C 32Kx64 SRAM Module EICCTROWC MStGN&NC. 32Kx64 Static RAM High SpeedCMOS Cache Memory Module Features 256KB Secondary Cache Module • For use with Intel Pentium Based Systems • Individual Byte Write Capability • Operates with External CPU Speeds
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EDI8F6432C
32KxS4
256KB
66MHz
CELP2X80CS3Z48
32Kx64
EDI8F6432C
edi8f6432c15mdc
edi8f6432c20mdc
ZD 103
burndy sms
ZD 103 ma
CZ 142
tme 126
dc block CZ-130
ZD 22
508-B36-4850
32kxS
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