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    Part ECAD Model Manufacturer Description Download Buy
    7MPV6186S15M Renesas Electronics Corporation 256KB ASYNC CACHE MODULE Visit Renesas Electronics Corporation
    7MP6122SA33M Renesas Electronics Corporation 256KB CACHE MODULE Visit Renesas Electronics Corporation
    7MPV6202S66M Renesas Electronics Corporation 256KB BURST TRI. MOD. Visit Renesas Electronics Corporation
    7MPV6202SA66M Renesas Electronics Corporation 256KB BURST TRI. MOD. Visit Renesas Electronics Corporation
    7MPV6122SA33M Renesas Electronics Corporation 256KB CACHE MODULE Visit Renesas Electronics Corporation
    R1LV5256ESP-5SI#B0 Renesas Electronics Corporation 256Kb Advanced LPSRAM (32k word x 8bit), SOP(28), /Tube Visit Renesas Electronics Corporation
    SF Impression Pixel

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    Kyocera AVX Components FE52GC8L0256KB

    FILM CAPACITORS 1100V 25UF 10% E
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    DigiKey FE52GC8L0256KB Bulk 1
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    Mouser Electronics FE52GC8L0256KB
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    Micron Technology Inc M58LR256KB70ZC5E

    IC FLASH 256MBIT PAR 79VFBGA
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    Micron Technology Inc M58LR256KB70ZQ5Z

    IC FLASH 256MBIT PAR 88TFBGA
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    Micron Technology Inc M58LR256KB70ZQ5E

    IC FLASH 256MBIT PAR 88TFBGA
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    Micron Technology Inc M58LR256KB70ZC5Z

    IC FLASH 256MBIT PAR 79VFBGA
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    256KB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10-15V

    Abstract: X5563 X5563S8 X5563S8I
    Text: Preliminary Information X5563 CPU Supervisor with 256Kbit SPI EEPROM FEATURES DESCRIPTION • Selectable watchdog time — 0.15s, 0.4s, 0.8s off • Low VCC detection and reset assertion —Four standard reset threshold voltages —Re-program low VCC reset threshold voltage


    Original     		PDF X5563 256Kbit 256Kbits 10MHz 10-15V X5563 X5563S8 X5563S8I

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32K x 8  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation  Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules


    Original     		PDF FM28V020 256Kbit FM28V020 FM28V020-TG, FM28V020-TG A9482296TG 32Kx8

    Untitled

    Abstract: No abstract text available
    Text: TMS470M Transportation Microcontroller Family The TMS470M microcontroller family enables developers to easily create safety-related applications for the transportation industry. TMS470M microcontrollers use the widely adopted ARM Cortex -M3 CPU running at 80MHz. The family offers Flash memory options ranging from 256KB to 640KB


    Original     		PDF TMS470M 80MHz. 256KB 640KB 128KB 10-bit

    WLCSP49

    Abstract: No abstract text available
    Text: STM32F401xB STM32F401xC ARM Cortex-M4 32b MCU+FPU, 105 DMIPS, 256KB Flash/64KB RAM, 10 TIMs, 1 ADC, 11 comm. interfaces Datasheet - production data Features • Core: ARM 32-bit Cortex -M4 CPU with FPU, Adaptive real-time accelerator ART Accelerator™ allowing 0-wait state execution


    Original     		PDF STM32F401xB STM32F401xC 256KB Flash/64KB 32-bit 4-to-26 DocID024738 WLCSP49

    M27V201

    Abstract: PDIP32 PLCC32 TSOP32
    Text: M27V201 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION: – Active Current 15mA at 5MHz 32 32 – Standby Current 20µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V


    Original     		PDF M27V201 256Kb 120ns FDIP32W PDIP32 M27V201 PDIP32 PLCC32 TSOP32

    M29W400B

    Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS


    Original     		PDF M29W400T M29W400B 512Kb 256Kb M29W400T M29W400B M29W400BT M29W400BB FBGA48 M29W400 M29W400BB

    FM24C256

    Abstract: FM24W256 FM24C256-G
    Text: FM24C256 256Kb FRAM Serial Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24C256 256Kb 256Kbit FM24C256 256-kilobit FM24W256. FM24W256 FM24C256-G

    JESD97

    Abstract: M29F400 M29F400B M29F400BB M29F400BT
    Text: M29F400BT M29F400BB 4 Mbit 512Kb x8 or 256Kb x16, Boot Block single supply Flash memory Feature summary • Single 5 V ± 10% supply voltage for program, erase and read operations ■ Access time: 45 ns ■ Programming time – 8 µs per Byte/Word typical


    Original     		PDF M29F400BT M29F400BB 512Kb 256Kb JESD97 M29F400 M29F400B M29F400BB M29F400BT

    RIC0639

    Abstract: FM25256B FM25256B-G FM25W256 FM25V02 -G
    Text: FM25256B 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25256B 256Kb FM25256B 256-kilobit FM25256B, FM25256B-G B70003G RIC0639 FM25V02 RIC0639 FM25256B-G FM25W256 FM25V02 -G

    M28R400C

    Abstract: M28R400CB M28R400CT
    Text: M28R400CT M28R400CB Known Good Die 4 Mbit 256Kb x16, Boot Block 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Delivery Form – VDD = 1.65V to 2.2V Core Power Supply – VDDQ= 1.65V to 2.2V for Input/Output – VPP = 12V for fast Program (optional)


    Original     		PDF M28R400CT M28R400CB 256Kb 100ns M28R400C M28R400CB M28R400CT

    RG5V02

    Abstract: fm25v02
    Text: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR RG5V02 fm25v02

    GS70328

    Abstract: GS70328SJ-10 GS70328SJ-10I GS70328SJ-12 GS70328SJ-15 GS70328SJ-7 GS70328SJ-7I GS70328SJ-8 GS70328SJ-8I
    Text: GS70328SJ/TS 32K x 8 256Kb Asynchronous SRAM SOJ, TSOP Commercial Temp Industrial Temp 7, 8, 10, 12, 15 ns 3.3 V VDD Corner VDD and VSS Features • Fast access time: 7, 8, 10, 12, 15 ns • 75/65/50/50/50 mA at max cycle rate • Single 3.3 V ± 0.3 V power supply


    Original     		PDF GS70328SJ/TS 256Kb 28-pin GS70328 GS70328SJ-10 GS70328SJ-10I GS70328SJ-12 GS70328SJ-15 GS70328SJ-7 GS70328SJ-7I GS70328SJ-8 GS70328SJ-8I

    FM1808

    Abstract: 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S
    Text: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		PDF FM1808 256Kb FM1808 256-kilobit MS-011 1kx8 FM1808-120-P FM1808-120-S FM1808-70-P FM1808-70-S

    M36DR432AD

    Abstract: M36DR432BD
    Text: M36DR432AD M36DR432BD 32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product FEATURES SUMMARY • Multiple Memory Product Figure 1. Package – 1 bank of 32 Mbit (2Mb x16) Flash Memory – 1 bank of 4 Mbit (256Kb x16) SRAM


    Original     		PDF M36DR432AD M36DR432BD 256Kb 100ns, 120ns 0020h LFBGA66 M36DR432AD: 00A0h M36DR432AD M36DR432BD

    FM1808

    Abstract: 7058 FM1808-70-P FM1808-70-S MS-011 MS-013
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM1808 256Kb 256Kbit FM1808 256-kilobit MS-011 7058 FM1808-70-P FM1808-70-S MS-011 MS-013

    88F6192

    Abstract: ARMv5TE Sheeva Marvell marvell* soc spdif spi ARMv5 Marvel Marvell SOC 88F6000 Marvell qdeo
    Text: Marvell 88F6192 SoC with Sheeva Technology Kirkwood Series PRODUCT OVERVIEW The Marvell 88F6192 SoC with Sheeva embedded CPU technology, is a high-performance integrated controller for value class applications. It integrates the Marvell Sheeva CPU core which is fully ARMv5TE-compliant with a 256KB L2 Cache. The


    Original     		PDF 88F6192 256KB 88F6192-003 ARMv5TE Sheeva Marvell marvell* soc spdif spi ARMv5 Marvel Marvell SOC 88F6000 Marvell qdeo

    88F6282

    Abstract: Marvell HDMI marvell ARMv5TE marvell* soc home security system block diagram PCIE NAND Marvell 88F6282 marvell switch marvell ethernet switch prestera
    Text: 300 series Marvell 88F6282 SoC PRODUCT OVERVIEW The Marvell 88F6282 SoC is a high-performance integrated controller. It integrates the Marvell developed CPU core which is fully ARMv5TE-compliant with a 256KB L2 Cache. The 88F6282 builds upon Marvell’s innovative Feroceon®


    Original     		PDF 88F6282 256KB Armada300 88F6282-01 Marvell HDMI marvell ARMv5TE marvell* soc home security system block diagram PCIE NAND Marvell 88F6282 marvell switch marvell ethernet switch prestera

    PCMCIA pinout sram

    Abstract: SRA01-04 PCMCIA SRAM Memory Card SRA01-SRA04
    Text: White Electronic Designs SRA01-SRA04 PCMCIA SRAM Memory Card — SRA Series SRAM MEMORY CARD 256KB THROUGH 8MB FEATURES GENERAL DESCRIPTION High Performance SRAM memory Card The WEDC SRAM Series SRA memory cards offer a high performance nonvolatile storage solution for code


    Original     		PDF SRA01-SRA04 256KB 150ns x8/x16 Powe50ns SRA11-14 PCMCIA pinout sram SRA01-04 PCMCIA SRAM Memory Card SRA01-SRA04

    GS70328

    Abstract: GS70328SJ-10 GS70328SJ-10I GS70328SJ-12 GS70328SJ-15 GS70328SJ-7 GS70328SJ-7I GS70328SJ-8 GS70328SJ-8I 70328
    Text: GS70328SJ/TS 32K x 8 256Kb Asynchronous SRAM SOJ, TSOP Commercial Temp Industrial Temp 7, 8, 10, 12, 15 ns 3.3 V VDD Corner VDD and VSS Features • Fast access time: 7, 8, 10, 12, 15 ns • 75/65/50/50/50 mA at max cycle rate • Single 3.3 V ± 0.3 V power supply


    Original     		PDF GS70328SJ/TS 256Kb 28-pin GS70328 GS70328SJ-10 GS70328SJ-10I GS70328SJ-12 GS70328SJ-15 GS70328SJ-7 GS70328SJ-7I GS70328SJ-8 GS70328SJ-8I 70328

    Untitled

    Abstract: No abstract text available
    Text: FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


    Original     		PDF FM1808 256Kb 32Kx8 28-pin MS-011

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM25L256 256Kb FRAM Serial 3V Memory – Extended Temp. Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25L256 256Kb FM25L256 FM25L256B

    Untitled

    Abstract: No abstract text available
    Text: HB56D25609A/B-85A/10A/12A 262,144-Word x 9-Bit High Density Dynamic RAM Module Pin No. • DESCRIPTION The HB56A25609 is a 256K x 9 dynamic RAM module, mounted two 1-Mbit DRAM HM514256A sealed in SOJ package and 256Kbit DRAM (HM51256) sealed in PLCC package. An outline of the


    OCR Scan     		PDF HB56D25609A/B-85A/10A/12A 144-Word HB56A25609 HM514256A) 256Kbit HM51256) 30-pin HB56A25609A) HB56A25609B)

    Untitled

    Abstract: No abstract text available
    Text: 256KB/1MB/4MB IDT79R4000 SECONDARY CACHE MODULE BLOCK FAMILY PRELIMINARY IDT7MP6074 IDT7MP6084 IDT7MP6094 FEATURES: DESCRIPTION: • High-speed B iC E M O S /C E M O S ™ secondary cache module block constructed to support the IDT79R4000 CPU • Available as a pin compatible family to build 256 kilobyte


    OCR Scan     		PDF 256KB/1MB/4MB IDT79R4000 IDT7MP6074 IDT7MP6084 IDT7MP6094 50MHz 75MHz IDT79R4000 IDT7MP6074/84/94

    M27W201

    Abstract: AN620 M27C2001 PLCC32 TSOP32 Application Note EPROM Programming
    Text: . . SGS-THOMSON k7 # . M27W201 RfilDÊlMSJlilLIlÊ'inEORODtgS 2 Mbit 256Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 70ns at Vcc = 3.0V to 3.6V - 80ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA


    OCR Scan     		PDF M27W201 256Kb 24sec. M27W201 TSOP32 AN620 M27C2001 PLCC32 Application Note EPROM Programming