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    DSAE0023189.pdf by Toshiba

    • 2009 7 FET MOSFET FET MOSFET IGBT () 1 2009/7 SCJ0004O () TO-92 (SC-43) VCEO (V) Max IC (A) Max VCE(sat) (V) Max hFE 12.7 MIN 4.7 M
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