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    DSA00588105.pdf

    • Renesas Electronics
    • Preliminary Datasheet RQA0004PXDQS Silicon N-Channel MOS FET Features High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% (f = 520 MHz) Compact package capable of surface mounting
    • Original
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    DSA00588105.pdf preview Download Datasheet

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    R07DS0418EJ0201 RQA0004 RQA0004PX RQA0004PXTL-E

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