Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX602 ZTX603 ISSUE 1 – MARCH 94 FEATURES * 80 Volt VCEO * 1 Amp continuous current * Gain of 2K at IC=1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 5 5 5 5 5 PARAMETER SYMBOL

DARLINGTON 1A 60V npn to92

Abstract: ZTX602 ZTX603 DSA003770
Contextual Info: ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL hFE Static Forward Current Transfer Ratio ZTX602 MIN. MAX. MIN. 2K 5K 2K 0.5K 2K 5K 2K 0.5K 100K 150

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX602 ZTX603 ISSUE 1 - MARCH 94_ FEATURES * 80 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t * G ain o f 2K a t lc=1 A m p * P to t= 1 W a tt ABSOLUTE MAXIMUM RATINGS.

ztx603

Contextual Info: ZTX602 Not Recommended for New Design Please Use ZTX603 ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE Transition Frequency fT

Contextual Info: ZTX602 ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 1 - MARCH 94_ FEATURES * 80 Volt VCE0 * 1 Amp continuous current * Gain of 2K at lc=1 Amp * P,„,= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc

VCS-60V

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSU E 1 - MARCH 94_ FE A T U R E S * 80 Volt V CE0 * 1 Am p continuous current * Gain o f 2 K at lc =1 Am p * P,o f 1W att ABSOLUTE MAXIMUM RATINGS. PARAMETER

bvc49

Abstract: TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ic Max PD Max (V) (A) (W) hFE Min Max fT ICBO Max (Hz) (A) 120M 0.1u 100n 100m 100n 10u tr Max (8) tf Max Toper Max (8) (Oe) 400n 150 150 150 150 150 Package Style NPN Darlington Transistors, (Cont'd)

MPSA42

Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100

Contextual Info: NPN Silicon Planar Medium Power Darlington Transistors ZTX 602 Z TX 603 FEATURES • • • • • 1 .5 W p o w e r d issipation 1A co n tin u o u s co lle cto r cu rre n t 4 A peak co lle cto r cu rre n t G uaranteed hFE specified up to 2 A Fast sw itc h in g

2N6700

Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. NPN 2N 6714 2N 6715 2N 6724 2 N 6725 2N 6716 2N 6717 2N6731 2N 6718 PNP V CBO V e t o 2N 6726 2N 6727 — — 2N 6728 2N 6729 2N 6732 2N 6730 !C !c m P,0, Max. V CE|Sat at V V A A V 40 50 50

BC372P

Abstract: ZTX849 ZTX601A ZTX851 ZTX853 ZTX855 ZTX857 ZTX858 ZTX869 ZTX955
Contextual Info: SUPER E-LINE TABLE 3: HIGH CURRENT SUPER E-LINE TRANSISTORS Pd=1.2 Watts This range of devices is rated at 1.2 Watts and offers extremely low saturation voltages coupled with high continuous and pulsed current capability. Typical application areas to benefit from these products

MPSA42

Abstract: MPSA43 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SLE D • T c17057fl D 0 G 7 D S 1 fibT ■ Z E T B SEMICONDUCTOR DICE ZETEX S E M I C O N D U C T O R S NPN HIGH VOLTAGE V CBO V CEO 300 300 200 200 150 160 140 125 120 100 300 300 200 200 150 140 120 125 120 100 Volts Min. Max. 100 100 100 100 100 100 100

ZTX458

Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO

ZTX 15

Abstract: load dump pulse automotive relay driver circuit using darlington ZTX704-705 5V to 240V relay ic ZTX752 replacement ZTX600 zetex transistors equivalent ztx649 zvn4206 application
Contextual Info: Application Note 5 Issue 2 February 1996 Super E-Line Applications in Automotive Electronics Replacement of Large Packaged Transistors with an Enhanced TO92 Product David Bradbury Car buyers are now demanding greater and greater sophistication in their purchases, which along with extra safety

2n6700

Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

ztx614

Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80

ZTX602

Abstract: ZTX614 ZTX605 BCX38B bcx38c
Contextual Info: Section 2: Bipolar Transistors D a rlin gton T ra n s is to rs E-Line High Perform ance NPN D arlington Transistors Pp = up to 1W Pinout :1-Collector, 2-Base, 3-Emitter V CEO h FE *C V at lc mA a t lB mA min MHz 10 10 1.2 1000 10 150 500 1000 10 10 1.2 1000

ZTX951

Abstract: ztx614
Contextual Info: SUPER E-LINE TABLE 3: HIGH CURRENT SUPER E-LINE TRANSISTORS Pd =1.2 Watts This range of devices is rated at 1.2 W atts and offers extrem ely low saturation voltages coupled w ith high continuous and pulsed current capability. Typical application areas to benefit from these products

Contextual Info: S EM IC O N D U C TO R DICE NPN HIGH VOLTAGE hFE at 'CBO V CBO VcEO Dice type Min. Min. Max. at VCB ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 Volts Min. Max. Volts Volts nA 300 300 200 200 150 160 140 125 120 100 100 200 100 200