ZTX654 Search Results

ZTX654

Abstract: ZTX655 DSA003771
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain % VCE(sat) - (Volts) 100 IC/IB=10

MPSA42

Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100

ZTX654

Contextual Info: ZTX654 Not Recommended for New Design Please Use ZTX655 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain %

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 - J U L Y 94 FEATURES * A 150 Volt V CE0 * 1 A m p continuous current * Low saturation voltage * Ptot= 1 W att hA J / m be E-Line T 09 2 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 / ISSUE 2 - J U L Y 94 FEATURES * 150 V o lt V CEQ * 1 A m p c o n tin u o u s c u rre n t * L o w s a tu ra tio n v o lta g e * Ptot= 1 W a tt E -Line T 0 9 2 Com patible ABSOLUTE MAXIMUM RATINGS.

Contextual Info: ZTX654 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)125è V(BR)CBO (V)125 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: S EM IC O N D U C TO R DICE NPN HIGH VOLTAGE hFE at 'CBO V CBO VcEO Dice type Min. Min. Max. at VCB ZTX657 MPSA42 ZTX656 MPSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 Volts Min. Max. Volts Volts nA 300 300 200 200 150 160 140 125 120 100 100 200 100 200

Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc

Contextual Info: TS PLESSEY SENI C O N D / D I SC R E T E 7220533 PLESSEY F Ë Ï 7E50533 000SD7M 7 95D 0 5 0 7 4 SEMICOND/ D IS CRE TE Super E-line transistors TABLE 4 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps

MPSA42

Abstract: MPSA43 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SLE D • T c17057fl D 0 G 7 D S 1 fibT ■ Z E T B SEMICONDUCTOR DICE ZETEX S E M I C O N D U C T O R S NPN HIGH VOLTAGE V CBO V CEO 300 300 200 200 150 160 140 125 120 100 300 300 200 200 150 140 120 125 120 100 Volts Min. Max. 100 100 100 100 100 100 100

ZTX458

Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO

BF493

Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.

2TX650

Abstract: zetex transistors TO92 BF493 ZTX458 ZTX558 ZTX758 BF392 BF393 MPSA92 ZTX658
Contextual Info: SbE » • ^70570 DGDb^M2 GTfl H Z E T B T -'Z /l-O l TABLE 13 : NPIU/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability.

ZT Ferranti

Abstract: BF4935P SE-169 TX-550 X752 X449
Contextual Info: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current

TIP290

Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
Contextual Info: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001

ztx1056a

Contextual Info: Section 2: Bipolar Transistors _ High Voltage T ransistors I 0 0 to BO O V o its E-Line NPIM High V o ltage {Vceo up to 400V T ra n s is to rs Pinout Details: 1-Collector, 2-Base, 3-Emitter V CBO V CEO hFE lc Type VcE sat)

ZTX558

Abstract: PSA42
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors show n in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Max Type V CBO V CEO M ax V CEIsat 'c V V mA 400 400

Se136

Abstract: Se133 SE135 ZTX654 se134
Contextual Info: NPN Silicon Planar Medium Power High Voltage Transistors ZTX 654 ZTX655 FEATURES • • • • • • 1.5 W power dissipation at Tamb = 2 5 ° C * 1A continuous lc Guaranteed hFE specified up to 1A Voltages up to 15 0 V Low saturation voltages Complementary types

ZTX689

Abstract: ztx795a
Contextual Info: SUPER E-LINE TABLE 1: SUPER E-LINE TRANSISTORS Pd = 1 Watt This range of transistors is rated at 1 W a tt and the low saturation voltage and high pulsed current rating m ake th em ideal fo r application areas including audio circuits, autom otive circuits and telecom s