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Unitrode Corporation U2TA506 750 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
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U2TA506 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
U2TA506		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
U2TA506		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF
U2TA506		Unitrode	International Semiconductor Data Book 1981		Scan	PDF

U2TA506 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bvc49 Abstract: TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001 Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ic Max PD Max (V) (A) (W) hFE Min Max fT ICBO Max (Hz) (A) 120M 0.1u 100n 100m 100n 10u tr Max (8) tf Max Toper Max (8) (Oe) 400n 150 150 150 150 150 Package Style NPN Darlington Transistors, (Cont'd)	Original	2S01111 2S01198A 2S0946A MPS6725 2SC3985 2S01661M 2S01521 92PU45A 2N6725 bvc49 TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001	PDF
U2TA510 Abstract: Unitrode Semiconductor U2TA506 Text: MICROSEMI CORP/ ÜIATERTOÜIN SDE D c13M7cï b 3 0D1E507 POWER DARLINGTONS- IUNIT U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 1.5V max. @ lc = 3A • Economic Plastic Molded Construction	OCR Scan	13M7cï 0D1E507 U2TA506 U2TA508 U2TA510 U2TA51C 10MHz 300/is; U2TA506, U2TA510 Unitrode Semiconductor	PDF
U2TA506 Abstract: U2TA508 U2TA510 U2TA Text: POWER DARLINGTONS 3 Amp, 100V, Planar NPN, Plastic U2TA506 U2TA508 U2TA510 D E S C R IP T IO N Unitrode N P N D arlingto ns co n sist of a two transistor circuit on a sin g le m ono lithic planar chip, in clu d in g integral bias resistance and protective diode. It is	OCR Scan	U2TA506 U2TA508 U2TA510 10MHz U2TA506, U2TA510 U2TA	PDF
U2TA508 Abstract: 1A 100V DIODE R-1 U2TA510 Text: POWER DARLINGTONS U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES DESCRIPTION • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 15V max. @ lc = 3A • Economic Plastic Molded Construction Unitrode NPN Dariingtons consist of a	OCR Scan	U2TA506 U2TA508 U2TA510 10MHz U2TA506, U2TA510, 1A 100V DIODE R-1 U2TA510	PDF
UFN540 Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450 Text: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State	OCR Scan	U2TA506 U2TA508 U2TA510 861-6S40 UFN540 UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450	PDF
triacs bt 804 600v Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor	OCR Scan	Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF