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    Z48A Search Results

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    Z48A Price and Stock

    Rochester Electronics LLC 1SZ48A

    DIODE ZENER 6.4V 0.25W
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    DigiKey 1SZ48A Bulk 3,477 21
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    Flip Electronics MC9S08DZ48ACLC

    IC MCU 8BIT 48KB FLASH 32LQFP
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    DigiKey MC9S08DZ48ACLC Tray 1,250 70
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    NXP Semiconductors MC9S08DZ48ACLF

    IC MCU 8BIT 48KB FLASH 48LQFP
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    DigiKey MC9S08DZ48ACLF Tray 1,250
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    Avnet Americas MC9S08DZ48ACLF Tray 13 Weeks 1,250
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    Mouser Electronics MC9S08DZ48ACLF
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    Newark MC9S08DZ48ACLF Bulk 1,250
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    Avnet Silica MC9S08DZ48ACLF 15 Weeks 250
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    EBV Elektronik MC9S08DZ48ACLF 750 15 Weeks 250
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    NXP Semiconductors MC9S08DZ48ACLC

    IC MCU 8BIT 48KB FLASH 32LQFP
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    DigiKey MC9S08DZ48ACLC Tray 1,250
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    Avnet Americas MC9S08DZ48ACLC Tray 0 Weeks, 2 Days 92
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    MC9S08DZ48ACLC Tray 4 Weeks 42
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    MC9S08DZ48ACLC Tray 13 Weeks 1,250
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    Mouser Electronics MC9S08DZ48ACLC
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    Avnet Silica MC9S08DZ48ACLC 15 Weeks 250
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    Flip Electronics MC9S08DZ48ACLC 1,250
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    NXP Semiconductors MC9S08DZ48AMLH

    IC MCU 8BIT 48KB FLASH 64LQFP
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    DigiKey MC9S08DZ48AMLH Tray 800
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    Avnet Americas MC9S08DZ48AMLH Tray 4 Weeks 35
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    MC9S08DZ48AMLH Tray 13 Weeks 800
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    Mouser Electronics MC9S08DZ48AMLH
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    Newark MC9S08DZ48AMLH Bulk 800
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    Avnet Silica MC9S08DZ48AMLH 15 Weeks 160
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    EBV Elektronik MC9S08DZ48AMLH 15 Weeks 160
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    Find more Z48A price and stock on Findchips.com

    Z48A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip


    Original     		PDF CY7C1061G/CY7C1061GE 16-Mbit ns/15 90-mA 20-mA

    23383-C

    Abstract: No abstract text available
    Text: N16L163WC2C NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com Advance Information 16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K x 16 bit Overview Features The N16L163WC2C is an integrated memory


    Original     		PDF N16L163WC2C 1024K N16L163WC2C 23383-C 23383-C

    CY62157EV30LL-45BVXI

    Abstract: TSOP 48 thermal resistance
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 I/O15) CY62157EV30LL-45BVXI TSOP 48 thermal resistance

    Untitled

    Abstract: No abstract text available
    Text: THIS SPEC IS OBSOLETE Spec No: 38-05391 Spec Title: CY62158DV30 MoBL, 8-Mbit 1024K x 8 MoBL Static RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62158DV30 MoBL 8-Mbit (1024K x 8) MoBL® Static RAM This is ideal for providing More Battery Life (MoBL®) in


    Original     		PDF CY62158DV30 1024K CY62158DV30 CY62158DV

    CY62167DV30L-55ZI

    Abstract: CY62167DV30
    Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed


    Original     		PDF CY62167DV30 16-Mbit I/O15) CY62167DV30 48-lead BV48A BV48B CY62167DV30L-55ZI

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip


    Original     		PDF CY7C1061G/CY7C1061GE 16-Mbit ns/15 90-mA 20-mA

    CY62157CV25

    Abstract: CY62157CV30 CY62157CV33 CY62157DV30 cy62157dv30l-55zxi
    Text: CY62157DV30 MoBL 8-Mbit 512K x 16 MoBL Static RAM Features portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or


    Original     		PDF CY62157DV30 I/O15) CY62157CV25, CY62157CV30, CY62157C. CY62157DV CY62157DV30 CY62157CV25 CY62157CV30 CY62157CV33 cy62157dv30l-55zxi

    Untitled

    Abstract: No abstract text available
    Text: CY62177ESL MoBL 32-Mbit 2 M x 16/4 M × 8 Static RAM 32-Mbit (2 M × 16/4 M × 8) Static RAM Features Functional Description • Thin small outline package-I (TSOP-I) configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ High-speed up to 55 ns


    Original     		PDF CY62177ESL 32-Mbit

    Untitled

    Abstract: No abstract text available
    Text: CY62177EV30 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM) ■ Very high speed ❐ 55 ns


    Original     		PDF CY62177EV30 32-Mbit

    48TSOPI

    Abstract: No abstract text available
    Text: CY62167E MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • Configurable as 1 M × 16 or as 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Wide voltage range: 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 1.5 µA


    Original     		PDF CY62167E 16-Mbit 48-pin I/O15) 48TSOPI

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original     		PDF CY62167EV30 16-Mbit 48-ball 48-pin

    IO14

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original     		PDF CY62167EV30 16-Mbit 48-ball 48-pin IO14

    CY62167DV30L-55ZI

    Abstract: CY62167DV30
    Text: CY62167DV30 MoBL 16-Mb 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed


    Original     		PDF CY62167DV30 16-Mb I/O15) CY62167DV30 CY62167DV30L-55ZI

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original     		PDF CY62167EV30 16-Mbit 48-rize

    Untitled

    Abstract: No abstract text available
    Text: CY62177EV18 MoBL 32-Mbit 2 M x 16 / 4 M × 8 Static RAM 32-Mbit (2 M × 16 / 4 M × 8) Static RAM Features Functional Description • Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M x 8 static RAM (SRAM) ■ Very high speed ❐ 70 ns


    Original     		PDF CY62177EV18 32-Mbit

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 CY62157DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62167EV30 MoBL 16-Mbit 1 M x 16 / 2 M × 8 Static RAM 16-Mbit (1 M × 16 / 2 M × 8) Static RAM Features • TSOP I package configurable as 1 M × 16 or 2 M × 8 SRAM ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C


    Original     		PDF CY62167EV30 16-Mbit 48-ball 48thorize

    Untitled

    Abstract: No abstract text available
    Text: CY62157EV30 MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features Functional Description • Thin small outline package (TSOP) I package configurable as 512 K × 16 or 1 M × 8 static RAM (SRAM) ■ High speed: 45 ns ■ Temperature ranges


    Original     		PDF CY62157EV30 CY62157DV30

    ECG5646

    Abstract: triac ecg ECG diac DIAC triac and diac
    Text: TRIACS cont'd IT RMS Max Forward Current (Amps) vrrm DC or Peak Volts 12 A 16 A IS A 25 A 50 ECG5681 100 ECG5682 200 ECG56004 ECG56015 ECG56019 ECG5683 ECG5675 ECG56006 ECG56016 ECG56020 ECG5685 ECG5677 ECG56008 ECG56017 ECG5673 400 600 ECG5667A 800 ECG5668A


    OCR Scan     		PDF O-220 ECG5646 1-133IT triac ecg ECG diac DIAC triac and diac

    triac b 978

    Abstract: ECG5679 ECG56024 ECG56022 ECG56026 ECG56030 ECG5689 ECG5693 main 0s ECG5688
    Text: TRIACS cont'd •T RMS Max Forward Current (Amps) vrrm DC or Peak Volts | 45 A 40 A 200 ECG5693 ECG56022 400 ECG5695 ECG56024 600 ECG5697 ECG56026 ECG5688 ECG5679 ECG5689 ECG56030 ECG5690 ECG56031 800 ECG56033 ECG56028 1000 100 Quads I,II,III 50 80 150 Quad


    OCR Scan     		PDF ECG5693 ECG56022 ECG5688 ECG5695 ECG56024 ECG5689 ECG56030 ECG5697 ECG56026 ECG5679 triac b 978 ECG56024 ECG56022 ECG56030 ECG5693 main 0s ECG5688

    ECG56006

    Abstract: ECG5646 5218 8 PIN 225 triac ECG56020 Z-59 ECG5679 diac 3 Pin TO220 Package triac ecg56 ECG5671
    Text: P H I L I P S E C G INC S l4E ]> bbSB'iSô 0007222 323 M E C G TRIACS cont'd IT RMS M ax Forward Current (Amps) vrrm DC or Peak Volts 12 A 15 A 16 A 25 A 50 ECG5681 100 ECG5682 200 ECG5673 ECG56004 ECG56015 ECG56019 ECG5683 400 ECG5675 ECG56006 ECG56016


    OCR Scan     		PDF ECG5681 ECG5682 ECG5673 ECG56004 ECG56015 ECG56019 ECG5683 ECG5675 ECG56006 ECG56016 ECG56006 ECG5646 5218 8 PIN 225 triac ECG56020 Z-59 ECG5679 diac 3 Pin TO220 Package triac ecg56 ECG5671

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


    OCR Scan     		PDF 23StQS T0-220 O-220 BUZ10S2 Z72AL Z73AL O-218 transistor buz 36 A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A

    ECG5638

    Abstract: ecg5679 5218 8 PIN ecg5620 ECG5607 ECG5656 ECG5626 ECG5629 ECG5642 ECG5624
    Text: PHILIPS E C G INC 54E J> bbSBSBfl 0QG7221 4*17 « E C G TRIACS Vr rm DC or Peak Volts >T RMS M ax Forward Current Amps 2.8j A 0.8 A 100 10 A 8A 4A ECG5601 ECG5612 ECG5622 ECG5631 ECG5640 ECG5650 ECG5602 ECG5613 ECG5623 ECG5632 50 200 ECG5655 ECG5641 ECG5603


    OCR Scan     		PDF DDG72S1 ECG5601 ECG5612 ECG5622 ECG5631 ECG5640 ECG5650 ECG5602 ECG5613 ECG5623 ECG5638 ecg5679 5218 8 PIN ecg5620 ECG5607 ECG5656 ECG5626 ECG5629 ECG5642 ECG5624

    ECG5645

    Abstract: ECG5651 TRIAC ECG5603 ECG5638 ECG5656 ECG5606 triac ecg5629 ECG5629 ECG5652 Z593
    Text: PHILIPS E C G INC 54E J> bbSBSBfl 0QG7221 4*17 « E C G TRIACS Vr rm DC or Peak Volts >T RMS M ax Forward Current Amps 2.8j A 0.8 A 100 10 A 8A 4A ECG5601 ECG5612 ECG5622 ECG5631 ECG5640 ECG5650 ECG5602 ECG5613 ECG5623 ECG5632 50 200 ECG5655 ECG5641 ECG5603


    OCR Scan     		PDF 0QG7221 ECG5601 ECG5612 ECG5622 ECG5631 ECG5613 ECG5623 ECG5632 ECG5614 ECG5624 ECG5645 ECG5651 TRIAC ECG5603 ECG5638 ECG5656 ECG5606 triac ecg5629 ECG5629 ECG5652 Z593