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    Z12A Search Results

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    CMZ12A Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, M-FLAT Visit Toshiba Electronic Devices & Storage Corporation
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    Vishay Semiconductors TLZ12A-GS08

    DIODE ZENER 12V 500MW SOD80
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    DigiKey TLZ12A-GS08 Cut Tape 18,479 1
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    Diodes Incorporated DDZ12ASF-7

    DIODE ZENER 11.42V 500MW SOD323F
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    DigiKey DDZ12ASF-7 Digi-Reel 7,906 1
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    DDZ12ASF-7 Reel 6,000 3,000
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    Avnet Americas DDZ12ASF-7 Reel 3,000 8 Weeks 3,000
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    Mouser Electronics DDZ12ASF-7 8,481
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    Newark DDZ12ASF-7 Cut Tape 1,730 5
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    TME DDZ12ASF-7 1
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    Suzhou Good-Ark Electronics Co Ltd 3.0SMBZ12A

    DIODE ZENER 12V 550MW DO214AA
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    DigiKey 3.0SMBZ12A Cut Tape 5,970 1
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    Vishay Semiconductors PLZ12A-G3-H

    DIODE ZENER 12V 500MW DO219AC
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    DigiKey PLZ12A-G3-H Digi-Reel 50 1
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    PLZ12A-G3-H Reel 4,500
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    Panasonic Electronic Components EX-Z12A

    SENSOR THROUGH-BEAM 200MM NPN
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    DigiKey EX-Z12A Box 1 1
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    Mouser Electronics EX-Z12A
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    Onlinecomponents.com EX-Z12A
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    Master Electronics EX-Z12A
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    Z12A Datasheets (1)

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    Z12A Shenzhen Yongerjia Electronic Zener Diode Original PDF

    Z12A Datasheets Context Search

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    MJ10

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • • • • 10433 B U Z12A L N channel Enhancement mode Logic Level Avalanche-rated Type v DS Z12AL 50 V h 42 A ^DS on 0.035 Q Package 1> Ordering Code TO-220 AB C67078-S1332-A3 Maximum Ratings Parameter Symbol Continuous drain current, Tc - 44 *C


    OCR Scan     		BUZ12AL O-220 C67078-S1332-A3 MJ10 PDF

    Z14b

    Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		MRF374/D MRF374 Z14b Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B PDF

    z18a

    Abstract: Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A
    Text: WILLAS DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6)


    Original     		GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 300K/W z18a Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A PDF

    Z18B

    Abstract: z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B
    Text: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.


    Original     		GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 500mW 300K/W Z18B z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B PDF

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF374/D MRF374 28rola, PDF

    z14b

    Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF374/D MRF374 z14b RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A PDF

    z18a

    Abstract: No abstract text available
    Text: SZA*A Series GLASS PASSIVATED JUNCTION Zener voltage regulator diodes 1.0 Watt Steady State Feature * 1W SMA * Zener voltage regulator diodes * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * We declare that the material of product


    Original     		DO-214AC MIL-STD-202, z18a PDF

    RO3010

    Abstract: C14A z14b
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		MRF374/D MRF374 MRF374/D RO3010 C14A z14b PDF

    zener gdzj marking

    Abstract: zener gdzj
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives


    Original     		GDZJ56 500mW 2011/65/EU DO-34 MIL-STD-750, DO-34 2014-REV zener gdzj marking zener gdzj PDF

    IR TK 2836

    Abstract: zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2
    Text: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER DO-35 Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		GDZJ56 DO-35 500mW MIL-STD-202G, DO-35 500mW 300K/W IR TK 2836 zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2 PDF

    z6c8

    Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
    Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)


    Original     		GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 2012-REV RB500V-40 z6c8 Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b PDF

    marking 6a2 smd

    Abstract: zener Z11B
    Text: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C


    Original     		500mW 94Leakage marking 6a2 smd zener Z11B PDF

    RO3010

    Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		MRF374 31JUL04 31JAN05 RO3010 Z14B C14A thermistor r5t 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b PDF

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original     		DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901 PDF

    Vj3640Y

    Abstract: transistor L1A
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device


    Original     		MRF374/D MRF374 Vj3640Y transistor L1A PDF

    Z22a

    Abstract: D74HA3.7A-C SZA51A
    Text: SZA*A Series GLASS PASSIVATED JUNCTION Zener voltage regulator diodes 1.0 Watt Steady State Feature * 1W SMA * Zener voltage regulator diodes * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * We declare that the material of product


    Original     		DO-214AC MIL-STD-202, Z22a D74HA3.7A-C SZA51A PDF

    Z18B

    Abstract: z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2
    Text: WILLAS DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		GDZJ56 DO-35 500mW MIL-STD-202, DO-35 Z18B z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2 PDF

    zener diode z15c

    Abstract: diode z6A2 Z18B Z5B6 z6c8
    Text: GDZJ2.0~GDZJ56 PB FREE PRODUCT AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes


    Original     		GDZJ56 DO-35 500mW MIL-STD-202, DO-35 MAXIM00mW 300K/W zener diode z15c diode z6A2 Z18B Z5B6 z6c8 PDF

    C13B

    Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this


    Original     		MRF374/D MRF374 C13B z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    Z22A

    Abstract: Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b
    Text: DAT SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives


    Original     		GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 Z22A Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b PDF

    IR TK 2836

    Abstract: z9b1 tk 2836 Z18A Z18B Z10C z15c Z30C Z33B z15b
    Text: GDZJ - SERIES 500mW EPITAXIAL ZENER DIODE FEATURES DO-34 • Planar die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability


    Original     		500mW DO-34 2002/95/EC MIL-STD-202G, 500mW 300K/W IR TK 2836 z9b1 tk 2836 Z18A Z18B Z10C z15c Z30C Z33B z15b PDF

    z18a

    Abstract: Z22C Z15C Z22A Z30C Z27D Z10C z6c8 z15a Z15B
    Text: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.


    Original     		GLZJ56 MINI-MELF/LL-34 500mW 2002/95/EC MIL-STD-750, z18a Z22C Z15C Z22A Z30C Z27D Z10C z6c8 z15a Z15B PDF

    Z14b

    Abstract: Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B
    Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.


    Original     		MRF374/D MRF374 Z14b Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B PDF