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    TVS DIODE 16VWM 39VC 2XDFN
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    onsemi SZESD5B5.0ST5G

    TVS DIODE 5VWM SOD523
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    onsemi SZESD7241N2T5G

    TVS DIODE 24VWM 48VC 2X2DFN
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    DigiKey SZESD7241N2T5G Cut Tape 37,876 1
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    onsemi SZESD5Z12T5G

    TVS DIODE 12VWM 25VC SOD523
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    DigiKey SZESD5Z12T5G Cut Tape 8,000 1
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    JST Manufacturing SM08B-ZESS-TB

    CONN HEADER SMD R/A 8POS 1.5MM
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    DigiKey SM08B-ZESS-TB Reel 8,000 1,000
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    Z ES Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZESC-2-11 Mini-Circuits POWER SPLITTER/COMBINER Original PDF
    ZESC-2-11 Mini-Circuits Power Splitter/Combiner Original PDF
    ZESC-2-11-S Mini-Circuits PWR SPLTR CMBD/SMA/BKT RoHS5 Original PDF
    ZEST-N-GPRS (EU) Siretta LOW COST GPRS MODEM - EU ONLY Original PDF
    ZEST-N-GPRS STARTER KIT Siretta ZEST MODEM + ANTENNA, PC CABLE A Original PDF
    ZEST-N-UMTS STARTER KIT Siretta Networking Solutions - Gateways, Routers - ROUTER NO CELL Original PDF
    ZEST PSU MULTI ADAPTOR Siretta MULTI-REGION POWER ADAPTER FOR Z Original PDF

    Z ES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1G NAND flash

    Abstract: F59L1G81A F59L
    Text: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit


    Original     		F59L1G81A 200us 1G NAND flash F59L1G81A F59L PDF

    "3528-21" footprint

    Abstract: LSR220 LSR33 LSR15 "3528-12" footprint footprint 6032-15 eia 3216-18 footprint
    Text: LSR nemco Low Profile Surface Mount Tantalum Capacitors Low Profile - Low ESR Low Profile 1.2 mm to 2.0 mm FEATURES z z z z z z Lead-free, RoHS compliant z z z z z z z z Capacitance range: 1.0 µf to 220 µf Low Profile Heights. Excellent for PCMCIA applications.


    Original     		QC300801/US0001, Compliant40) "3528-21" footprint LSR220 LSR33 LSR15 "3528-12" footprint footprint 6032-15 eia 3216-18 footprint PDF

    NAND Flash

    Abstract: F59L1G81A
    Text: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes


    Original     		F59L1G81A 200us it/528 NAND Flash F59L1G81A PDF

    F59L1G81A

    Abstract: No abstract text available
    Text: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes


    Original     		F59L1G81A 200us F59L1G81A PDF

    Untitled

    Abstract: No abstract text available
    Text: LSR Low ESR Surface Mount Tantalum Capacitors nemco Low ESR FEATURES z Lead-free, RoHS compliant z z z z z z z z z z z z z Very Low Equivalent Series Resistance ESR , Ideal for Power Supplies High ripple and surge current capability Meets or exceeds EIA 535 BAAC and IECQ standards (QC300801/US0001, IS - 28)


    Original     		QC300801/US0001, Gl240) PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52S32162A Revision History : Revision 1.0 Oct. 31, 2006 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Oct. 2006 Revision : 1.0 1/30 ESMT M52S32162A SDRAM 1M x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z


    Original     		M52S32162A 16Bit PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT F49L320UA/F49L320BA 2F Flash 32 Mbit (4M x 8/2M x 16) 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z z z Single supply voltage 2.7V-3.6V Fast access time - Random access time: 70/90 ns - Page access times: 30ns z 4,194,304x8 / 2,097,152x16 switchable by BYTE pin


    Original     		F49L320UA/F49L320BA 304x8 152x16 32Kte PDF

    eia 3216-18 footprint

    Abstract: "3528-21" footprint 3528 footprint 7361 LSR220 LSR33 3528-12 footprint footprint 6032-15
    Text: LSR nemco Low Profile Surface Mount Tantalum Capacitors Low ESR Low Profile Surface Mount Tantalum Capacitors Low Profile 1.2 mm to 2.0 mm FEATURES z z z z z z z z z z z z z Low Profile Heights. Excellent for PCMCIA applications. Very Low Equivalent Series Resistance ESR , Ideal for Power Supplies


    Original     		QC300801/US0001, Com40) eia 3216-18 footprint "3528-21" footprint 3528 footprint 7361 LSR220 LSR33 3528-12 footprint footprint 6032-15 PDF

    0.65mm pitch BGA

    Abstract: M52S16161A M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A
    Text: ESMT M52S16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3


    Original     		M52S16161A 16Bit M52S16161A 0.65mm pitch BGA M52S16161A-10TG M52S16161A-8BG M52S16161A-8TG EsmtM52S16161A PDF

    Mobile SDRAM

    Abstract: M52D32162A
    Text: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3


    Original     		M52D32162A 16Bit M52D32162A Mobile SDRAM PDF

    M52S32162A

    Abstract: No abstract text available
    Text: ESMT M52S32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3


    Original     		M52S32162A 16Bit M52S32162A PDF

    Mobile SDRAM

    Abstract: BGA-60 M52D16161A-10TG2J
    Text: ESMT M52D16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )


    Original     		M52D16161A 16Bit M52D16161A Mobile SDRAM BGA-60 M52D16161A-10TG2J PDF

    Mobile SDRAM

    Abstract: No abstract text available
    Text: ESMT M52S16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )


    Original     		M52S16161A 16Bit M52S16161A Mobile SDRAM PDF

    M52D32162A

    Abstract: No abstract text available
    Text: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 2 & 3


    Original     		M52D32162A 16Bit M52D32162A PDF

    M52S32162A

    Abstract: MAKING A10 BGA
    Text: ESMT M52S32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 2.5V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3


    Original     		M52S32162A 16Bit M52S32162A MAKING A10 BGA PDF

    CKE 2009

    Abstract: No abstract text available
    Text: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS


    Original     		M52D32162A 16Bit M52D32162A CKE 2009 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52L32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52L32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.


    Original     		M52L32321A 32Bit M52L32321A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.


    Original     		M52D16161A 16Bit PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52S32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52S32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.


    Original     		M52S32321A 32Bit M52S32321A PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D32321A Revision History : Revision 1.0 Nov. 02, 2006 -Original Elite Semiconductor Memory Technology Inc. Publication Date : Nov. 2006 Revision : 1.0 1/29 ESMT M52D32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z


    Original     		M52D32321A 32Bit M52D32321A PDF

    M52D16161A

    Abstract: No abstract text available
    Text: ESMT M52D16161A Operation Temperature Condition -40°C~85°C Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs


    Original     		M52D16161A 16Bit M52rate M52D16161A PDF

    MAKING A10 BGA

    Abstract: M52D32162A
    Text: ESMT M52D32162A Mobile SDRAM 1M x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32162A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 16 bits, fabricated with high performance CMOS


    Original     		M52D32162A 16Bit M52D32162A MAKING A10 BGA PDF

    Untitled

    Abstract: No abstract text available
    Text: ESMT M52D32321A Mobile SDRAM 512K x 32Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.


    Original     		M52D32321A 32Bit PDF

    M52D32321A

    Abstract: No abstract text available
    Text: ESMT M52D32321A Mobile SDRAM 512K x 32Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.


    Original     		M52D32321A 32Bit M52D32321A PDF