Untitled
Abstract: No abstract text available
Text: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)
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M52D16161A
16Bit
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M52D16161A-10BG
Abstract: M52D16161A M52D16161A-10TG
Text: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)
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M52D16161A
16Bit
M52D16161A
M52D16161A-10BG
M52D16161A-10TG
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M52D16161A
Abstract: M52D16161A-10BG M52D16161A-10TG cke 2009 amp
Text: ESMT M52D16161A Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.
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M52D16161A
16Bit
M52D16161A
M52D16161A-10BG
M52D16161A-10TG
cke 2009 amp
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M52D16161A
Abstract: No abstract text available
Text: ESMT M52D16161A Operation Temperature Condition -40°C~85°C Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs
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M52D16161A
16Bit
M52rate
M52D16161A
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Mobile SDRAM
Abstract: BGA-60 M52D16161A-10TG2J
Text: ESMT M52D16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 )
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M52D16161A
16Bit
M52D16161A
Mobile SDRAM
BGA-60
M52D16161A-10TG2J
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Untitled
Abstract: No abstract text available
Text: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION The M52D16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology.
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M52D16161A
16Bit
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Untitled
Abstract: No abstract text available
Text: M52D16161A 2J Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM GENERAL DESCRIPTION FEATURES 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (2 & 3 ) Burst Length (1, 2, 4, 8 & full page)
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M52D16161A
16Bit
M52D16161A
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M52D16161A
Abstract: No abstract text available
Text: ESMT M52D16161A Operation Temperature Condition -40°C~85°C Mobile SDRAM 512K x 16Bit x 2Banks Mobile Synchronous DRAM FEATURES z z z z z z z z z z z GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs
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M52D16161A
16Bit
M52D16rate
M52D16161A
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M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now
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256Kb
40/44L-TSOPII
M11B416256A-25JP
M11B416256A-35TG
M11L416256SA-35JP
M11L416256SA-35TG
40L-SOJ
44-40L-TSOPII
128Mb
M13S2561616A-5TG
90-FBGA
M12L64164A-7T
M13S2561616A -5T
M11B416256A-25JP
diode 6BG
90FBGA
M12L128168A-6TG
M12L16161A
TSOPII
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