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    YTS2907 Search Results

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    YTS2907 Price and Stock

    Toshiba America Electronic Components YTS2907A

    VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components YTS2907A 2,560
    • 1 $0.18
    • 10 $0.18
    • 100 $0.081
    • 1000 $0.054
    • 10000 $0.054
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    YTS2907 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    YTS2907 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    YTS2907A Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    YTS2907 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BC25SB

    Abstract: MRF547 S02907A 425M SF231 LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO >= HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576:r 5 fO ~~~26i07A 20 25 30 ~~h~o~o SCtd MMST2907A MMST2907A NTM2907A NTM2907A NT2907A NT2907A PH2907AR P2N2907A 2N2905AL


    Original
    HSE141 SF231 SF331 MMBT8598 MMBT2907A PH2907A PN2907A 2N2905A 2N2907A 2N576 BC25SB MRF547 S02907A 425M LOW-POWER SILICON PNP KT361K trw rf NTM2907A MRF549 PDF

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


    Original
    050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 PDF

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


    Original
    050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A PDF

    ICA10

    Abstract: YTS2907A 150fps
    Text: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS YTS2907A FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND +Q5 Z5-(X3 COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1— -500mA . High Transition Frequency


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    YTS2907A -500mA fT-200MHz YTS2222A -500mA, -50mA Ta-25 -15mA 500mA, -50mA ICA10 YTS2907A 150fps PDF

    YTS2906A

    Abstract: YTS2221 150PPS
    Text: SILICON PNP EPITAXIAL TYPE YTS2907A Unit in mm FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION, + 0.5 MID1UM-SPEED SW ITCHING A N D A U D IO TO VHF AMPLIFIER 2 .5 - a s APPLICATIONS. + Û 25 i.5 ~ a i5 HO +I tfc5 DC Current Gain Specified : —0.1~ —500mA


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    YTS2907A --500mA --500mA, --50mA 200MHz YTS2221A, YTS2222A. O-236MOD SC-59 YTS2906A YTS2221 150PPS PDF

    transistor marking MK

    Abstract: YTS2222
    Text: TOSHIBA TRANSISTOR YTS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1~ -500mA . High Transition Frequency : @ Ic— 50mA, fx*200MHz(Min.)


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    YTS2907 -500mA 200MHz YTS2222 -500mA, -50mA Ta-258C) -10/iA, -10mA, 10/iA, transistor marking MK YTS2222 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DISCRETE/OPTO 45E D ÌQ'msa • TOSHIBA TRANSISTOR 0017=^7 S « T 0 S 4 - YTS2907A SILICON PNP EPITAXIAL TYPE (PCT PROCESS) FOR HIGH SPEED SWITCHING USE Unit in mm +QS Z 5-Q 3 +<Ï2 S DC TO VHF AMPLIFIER APPLICATIONS AND


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    YTS2907A 500mA 500mA, -50mA YTS2222A 150PFS PDF

    YTS2906

    Abstract: YTS2222 YTS2221
    Text: SILICON PNP EPITAXIAL TYPE YTS2907 Unit in mm FOR GENERAL PURPOSE USE + 0.5 MEDIUM SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATION FEATURES: • High DC Current Gain Specified : -0.1 ^-500mA • High Transition Frequency : fT=200KHz Min. @ Ic=-50mA


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    YTS2907 -500mA 200KHz -50mA -500mA, YTS2221 YTS2222 SC-59 -10pA, YTS2906 YTS2222 PDF

    YTS2222

    Abstract: No abstract text available
    Text: TOSHIBA YTS2907 Transistor Unit in mm Silicon PNP Epitaxial Type For High-Speed Switching Use DC to VHF Amplifier Applications and Complementry Circuitry Features • High DC Current Gain Specified - 0.1 - -500mA • High Transition Frequency - @ lc = -50mA, fT = 200MHz Min.


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    YTS2907 -500mA -50mA, 200MHz -500mA, -50mA YTS2222 PDF

    YTS2222A

    Abstract: No abstract text available
    Text: TOSHIBA YTS2907A Transistor U n it in m m Silicon PNP Epitaxial Type +as Z 5 -a 3 For High-Speed Switching Use +<12 S .1.5-CU5 rtO d ö + I DC to VH F Amplifier Applications and Complementry Circuitry F e a tu re s • High DC Current Gain Specified a - -0.1 - -500mA


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    YTS2907A -500mA -50mA, 200MHz -500mA, -50mA YTS2222A a50PPS YTS2222A PDF

    YTS2222A

    Abstract: transistor marking 1p Z
    Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage


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    500mA YTS2222A 300MHz YTS2907A. 500mA, Ta-25 150mA, YTS2222A transistor marking 1p Z PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125


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    YTS2222 -50QmA 500mA, YTS2907 VCE-10V, Ic-10mA 150mA 500mA Ic-150tnA 150mA, PDF

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009 PDF

    YTS2222

    Abstract: No abstract text available
    Text: TOSHIBA YTS2222 Transistor Unit in mm Silicon NPN Epitaxial Type + Q5 as-a3 For General Purpose Use + Q25 <n Medium-Speed Switching and Audio to w o ö d + 1 VHF Frequency Application Features • D C Current Gain Specified €E- - 0.1 - 500mA • Low Collector-Emitter Saturation Voltage


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    YTS2222 500mA 500mA, YTS2907 YTS2222 PDF

    2n3904 2n3906

    Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
    Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64


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    2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2n3904 2n3906 2SC1815 2SA1015 2SC1815 2SA1015 PDF

    2n 3904 411

    Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
    Text: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13


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    1SV237 1SV239. 1SV257 TA4100F. YTS2222. YTS2222A. YTS2907. YTS2907A. YTS3904. YTS3906. 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA CD O <0 ro cn o —I O cn x > OVERSEA STANDARD « ic PC mA (mW) VCE Ic (V) (mA) SW Time MAX. Cob f j MIN. VcE(sat) MAX. hFE v CE0 Type No. V CE •c V CB td tr tstg tf (MHz) (V) (mA) (pF) (V) (ns) (ns) (ns) (ns) 5 250/200 20 10 4/4.5 5 35 35 175/175 50/60


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    YTS3903 YTS3905 YTS3904 YTS3906 YTS4123 YTS2222 YTS2907 YTS2221A YTS2906A YTS2222A PDF

    TIPI27

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0


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    OT-23MOD 2N3903 YTS3903 2N3904 YTS3904 2N3905 YTS3905 2N3906 YTS3906 2N4123 TIPI27 PDF

    YTS2222A

    Abstract: No abstract text available
    Text: TOSHIBA YTS2222A Transistor U n it in m m Silicon NPN Epitaxial Type For General Purpose Use Medium-Speed Switching and Audio to VHF Frequency Application Features • DC Current Gain Specified - 0.1 - 500mA • Low Coilector-Emitter Saturation Voltage - Vqe sat = 1 -60V (Max.) @ Iq = 500mA, lB = 50mA


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    YTS2222A 500mA 500mA, 300MHz YTS2907A 100pA. 150mA, 100fvs YTS2222A PDF

    YTS2222

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR YTS2222 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE Unit in mm +as Z S -Û 3 MIDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION +Û2 3 ¿S-Q15. HO d <3 FEATURES: +i . DC Current Gain Specified : 0.1— 500mA


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    YTS2222 500mA S-Q15. 500raA, YTS2907 Ta-25 150mA Ic-500mA Ic-150mA 150mA, YTS2222 PDF

    2N3904

    Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150
    Text: ALPHABETICAL INDEX 2N3904 .5 2SJ201 . 97 2N3906 . 9 2SK405 . 100 2N4123 . 13


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    2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2SJ201 2SK405 2N3904 Z-47 2SA1015 2SK1529 SM12 YTFP150 PDF

    YTS2222A

    Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
    Text: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60


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    UN8231A UN9110 UN9111 UN9113 UN9114 003ax SC-59) YTS2222A YTS2221 SC-59 YTS2222A YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DISCRETE/OPTO 4SE D • ^0=17250 O a i T ^ S 1 «TOSM TOSHIBA YTQ9QÍ17 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) YTSZ907 FOR HIGH-SPEED SWITCHING USE DC TO VHF AMPLIFIER APPLICATIONS AND


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    YTSZ907 500mA 200MHz -500mA, -50mA YTS2222 Ta-25Â VCE--10V, PDF