ICA1008A
Abstract: dc 8069 watkinsjohn
Text: ICA1008A The Communications Edge GaAs MMIC Amplifier Product Features • 2.0 to 10.0 GHz Bandwidth • 12.5 dB Gain • +/- 0.75 dB Gain Flatness • 1.6:1 VSWR’s • 40 dB Reverse Isolation • 28 dBm OIP3 • On Chip Bias Options • 16 dBm P1dB • Single 5 Volt Supply
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ICA1008A
ICA1008A
1-800-WJ1-4401
dc 8069
watkinsjohn
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ICA1004
Abstract: No abstract text available
Text: ICA1004 0.75 to 3.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR CELLULAR AND PCS APPLICATIONS ◆ SINGLE POWER SUPPLY +5 V ◆ ON-CHIP BIAS NETWORK ◆ EXCELLENT FLATNESS OVER TEMP. ◆ 100% ON-WAFER RF-TESTED ICA1004 Chip Outline Guaranteed Specifications* Minimum
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ICA1004
ICA1004
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: ICA1002A The Communications Edge GaAs MMIC Amplifier Product Features • 9.0 to 11.0 GHz Bandwidth • 14 dB Gain • +/- 0.5 dB Gain Flatness • 1.5:1 VSWR’s • 45 dB Reverse Isolation • 28 dBm OIP3 • On Chip Bias Options • 16 dBm P1dB • Single 5 Volt Supply
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ICA1002A
ICA1002A
1-800-WJ1-4401
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lm 4580
Abstract: 4499 driver 4588
Text: ICA1008 2.0 to 10.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY: +5V ◆ BROADBAND PERFORMANCE ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ SELECTABLE BIAS OPTIONS ICA1008 Chip Outline
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ICA1008
ICA1008
1-800-WJ1-4401
lm 4580
4499 driver
4588
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ICA1001A
Abstract: No abstract text available
Text: ICA1001A The Communications Edge GaAs MMIC Amplifier Product Features • 4.5 to 6.5 GHz Bandwidth • 17 dB Gain • 1.5:1 VSWR’s • 45 dB Reverse Isolation • 29 dBm OIP3 • On Chip Bias Options • 19 dBm P1dB • Single 5 Volt Supply • 100% On-wafer RF tested
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ICA1001A
ICA1001A
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: ICA1004A The Communications Edge GaAs MMIC Amplifier Product Features • 0.75 to 3.0 GHz Bandwidth • 16 dB Gain • +/- 0.5 dB Gain Flatness • 1.5:1 VSWR’s • 38 dB Reverse Isolation • 28 dBm OIP3 • Excellent Gain Flatness over • • •
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ICA1004A
ICA1004A
500pf
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: ICA1002 9.0 to 11.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER AMP, DRIVER, AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY +5 V ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ MULTIPLE ON-CHIP BIAS OPTIONS ICA1002 Chip Outline Guaranteed Specifications*
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ICA1002
ICA1002
1-800-WJ1-4401
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lm 3254
Abstract: No abstract text available
Text: ICA1009 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY: +5V ◆ BROADBAND PERFORMANCE ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ SELECTABLE BIAS OPTIONS ICA1009 Chip Outline
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ICA1009
ICA1009
1-800-WJ1-4401
lm 3254
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Untitled
Abstract: No abstract text available
Text: ICA1007 2.0 to 8.0 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY: +11 V ◆ BROADBAND PERFORMANCE ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ TWO ON-CHIP BIAS OPTIONS ICA1007 Chip Outline
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ICA1007
ICA1007
1-800-WJ1-4401
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Untitled
Abstract: No abstract text available
Text: ICA1007A The Communications Edge GaAs MMIC Amplifier Product Features • 2.0 to 8.0 GHz Bandwidth • 12 dB Gain • +/- 0.75 dB Gain Flatness • 1.6:1 VSWR’s • 32 dB Reverse Isolation • 31 dBm OIP3 • On Chip Bias Options • 21 dBm P1dB • Single 11 Volt Supply
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ICA1007A
ICA1007A
1-800-WJ1-4401
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10459
Abstract: No abstract text available
Text: ICA1001 4.5 to 6.5 GHz GaAs MMIC AMPLIFIER ◆ IDEAL FOR BUFFER AMP AND GAIN BLOCK APPLICATIONS ◆ SINGLE POWER SUPPLY +5 V ◆ ON-CHIP BIAS NETWORK ◆ 100% ON-WAFER RF-TESTED ◆ MULTIPLE ON-CHIP BIAS OPTIONS ICA1001 Chip Outline Guaranteed Specifications*
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ICA1001
ICA1001
on-waf26
1-800-WJ1-4401
10459
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Untitled
Abstract: No abstract text available
Text: ICA1004 0.75 to 3.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ IDEAL FOR CELLULAR AND PCS APPLICATIONS SINGLE POWER SUPPLY +5 V ON-CHIP BIAS NETWORK EXCELLENT FLATNESS OVER TEMP 100% ON-WAFER RF-TESTED ICA1004 Chip Outline Guaranteed Specifications* Characteristics
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OCR Scan
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ICA1004
ICA1004
J1-4401
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Untitled
Abstract: No abstract text available
Text: uud ICA1001 4.5 to 6.5 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER AMP AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY +5 V ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED MULTIPLE ON-CHIP BIAS OPTIONS ICA1001 Chip Outline Guaranteed Specifications”
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ICA1001
ICA1001
J1-4401
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Untitled
Abstract: No abstract text available
Text: 2.0 to 8.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +11 V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED TWO ON-CHIP BIAS OPTIONS ICA1007 Chip Outline Guaranteed Specifications*
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ICA1007
J1-4401
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Untitled
Abstract: No abstract text available
Text: ICA1009 m 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ m I•' j□# h I 1 I IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS
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ICA1009
ICA1009
J1-4401
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17417
Abstract: 15268 amplifier 1 2 ghz
Text: uud ICA1007 2.0 to 8.0 GHz GaAs MMIC AMPLIFIER ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +11 V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED TWO ON-CHIP BIAS OPTIONS ♦ ♦ ♦ ♦ ♦ ICA1007 Chip Outline
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ICA1007
ICA1007
1-800-WJ1-4401
17417
15268
amplifier 1 2 ghz
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2 ic 4440 amplifier input output
Abstract: power amplifier IC 4440
Text: ICA1002 9.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER AMP, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY +5 V ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED MULTIPLE ON-CHIP BIAS OPTIONS ICA1002 Chip Outline Guaranteed Specifications*
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ICA1002
ICA1002
J1-4401
2 ic 4440 amplifier input output
power amplifier IC 4440
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ICA1003
Abstract: lm 6561
Text: uuJ ICA1003 10.0 to 12.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ HIGH GAIN IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS ICA1003 Chip Outline Guaranteed Specifications*
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ICA1003
ICA1003
1-800-WJ1
lm 6561
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AMPLIFIER 1800w
Abstract: U 6204 lm 4580 4499 driver WJ-ICA1008
Text: uuJ ICA1008 2.0 to 10.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS ICA1008 Chip Outline
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ICA1008
ICA1008
AMPLIFIER 1800w
U 6204
lm 4580
4499 driver
WJ-ICA1008
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lm 3254
Abstract: ICA1009 11293
Text: u u lÌ ICA1009 2.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY: +5V BROADBAND PERFORMANCE ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED SELECTABLE BIAS OPTIONS IC A 1009 Chip Outline
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ICA1009
J1-4401
lm 3254
ICA1009
11293
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Untitled
Abstract: No abstract text available
Text: ICA1001 4.5 to 6.5 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER AMP AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY +5 V ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED MULTIPLE ON-CHIP BIAS OPTIONS m m m m ICA1001 Chip Outline Guaranteed Specifications*
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ICA1001
ICA1001
J1-4401
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82X48
Abstract: No abstract text available
Text: ICA1002 UjJ 9.0 to 11.0 GHz GaAs MMIC AMPLIFIER ♦ ♦ ♦ ♦ ♦ IDEAL FOR BUFFER AMP, DRIVER, AND GAIN BLOCK APPLICATIONS SINGLE POWER SUPPLY +5 V ON-CHIP BIAS NETWORK 100% ON-WAFER RF-TESTED MULTIPLE ON-CHIP BIAS OPTIONS ICA1002 Chip Outline fT W W l
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ICA1002
ICA1002
1-800-WJ1
82X48
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SFM610
Abstract: No abstract text available
Text: SIEMENS ILD610 Dual Phototransistor Optocoupler FEATURES Dimensions in inches mm • Dual Version o f SFM610 Series • High Current Transfer Ratios ILD810-1,40-90% ILD610-2,63-125% ILD 610-3,100-200% ILD 610-4,160-320% • IsolationT eat Voltage, 5300VRM8
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SFM610
ILD610
ILD810-1
ILD610-2
5300VRM8
Ica10
E52744
ILD610
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bcb25
Abstract: BCB30 2X40 Scans-048 bcb34 Electron Device Mfg Corp
Text: X-RAY TUBES, PORTABLE X-RAY UNITS j l Electron Device Mfg Corp X-RAY T U B E S F O R I N S P E C T I O N O F MATERIALS ON IN D U ST R IA L SCALE Type Focal S pot D im ensions, mm R ated V oltage, kV M axim um A node C u rre n t, mA 0,2BnK7-100 0.8 to 1.2
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2BnK7-100
3BFIK8-100
ni-60
bcb25
BCB30
2X40
Scans-048
bcb34
Electron Device Mfg Corp
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