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    YTS2222 Search Results

    YTS2222 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    YTS2222 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    YTS2222A Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    YTS2222 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    BF189

    Abstract: NT2222 BSY21 TP3300 BF234 bf310 JE9101A 2sc2787l PE254 PE254C
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO , 5 10 15 20 25 30 35 40 45 50 55 60 70 75 80 85 90 fr (V) (Hz) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 3U 30 30 30 30 30 30 30 30 30 ~~~;~P ~eelnoex BC413P BC413C BC413CP GES2221


    Original     		PDF TMPT2222 PN3643 TP2219 TP2222 TP3300 TP3302 TP3643 TP5369 2N3643 2N4437 BF189 NT2222 BSY21 BF234 bf310 JE9101A 2sc2787l PE254 PE254C

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    Untitled

    Abstract: No abstract text available
    Text: TOS H IB A DISCRETE/OPTO 45E TDTTESD D GGIT'HO TOSHIBA TRANSISTOR 2 «TOS4 YTS2222 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Z.cí - 3 FOR GENERAL PURPOSE USE Unit in mm MIDIUM-SPEED SWITCHING AND AUDIO TO +ÛS 2 .5 -a s VHF FREQUENCY APPLICATION + < 125


    OCR Scan     		PDF YTS2222 -50QmA 500mA, YTS2907 VCE-10V, Ic-10mA 150mA 500mA Ic-150tnA 150mA,

    YTS2222

    Abstract: No abstract text available
    Text: TOSHIBA YTS2222 Transistor Unit in mm Silicon NPN Epitaxial Type + Q5 as-a3 For General Purpose Use + Q25 <n Medium-Speed Switching and Audio to w o ö d + 1 VHF Frequency Application Features • D C Current Gain Specified €E- - 0.1 - 500mA • Low Collector-Emitter Saturation Voltage


    OCR Scan     		PDF YTS2222 500mA 500mA, YTS2907 YTS2222

    YTS2222A

    Abstract: No abstract text available
    Text: TOSHIBA YTS2222A Transistor U n it in m m Silicon NPN Epitaxial Type For General Purpose Use Medium-Speed Switching and Audio to VHF Frequency Application Features • DC Current Gain Specified - 0.1 - 500mA • Low Coilector-Emitter Saturation Voltage - Vqe sat = 1 -60V (Max.) @ Iq = 500mA, lB = 50mA


    OCR Scan     		PDF YTS2222A 500mA 500mA, 300MHz YTS2907A 100pA. 150mA, 100fvs YTS2222A

    YTS2222

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR YTS2222 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE Unit in mm +as Z S -Û 3 MIDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION +Û2 3 ¿S-Q15. HO d <3 FEATURES: +i . DC Current Gain Specified : 0.1— 500mA


    OCR Scan     		PDF YTS2222 500mA S-Q15. 500raA, YTS2907 Ta-25 150mA Ic-500mA Ic-150mA 150mA, YTS2222

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DISCRETE/O PTO TO S H IB A TR A N S IS TO R 45E D • 1 O -]72S0 0G17T12 b «T O S 4 YTS2222A SILICON NPN EPITAXIAL T Y P E (PCT PROCESS) -~J~ 7 Í | _ l S FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO +0.5 2.5-Û3 VHF FREQUENCY APPLICATION


    OCR Scan     		PDF 0G17T12 YTS2222A 500mA 500raA, 300MHz YTS2907A. lE-20mA Ic-100Â

    YTS2222A

    Abstract: YTS2222 YTS2221
    Text: SILICON NPN EPITAXIAL TYPE YTS2222A FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION. MIDIUM-SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATIONS. • • • • DC Current Gain Specified : 0.1~500mA Low Collector-Emitter Saturation Voltage : V cE sat = 1.0V(Max.) @Iq = 500mA, Ig = 50mA


    OCR Scan     		PDF YTS2222A 500mA 500mA, YTS2221A 250MHz 300MHz YTS2906A, YTS2907A. YTS2222A YTS2222 YTS2221

    YTS2221

    Abstract: YTS2222
    Text: YTS2222 SILICON NPN EPITAXIAL TYPE Unit in mm FOR GENERAL PURPOSE USE + 0.5 MIDIUM-SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATION FEATURES: • DC Current Gain Specified : O.l^SOOmA • Low Collector-Emitter Saturation Voltage : VCE sat =1.6V(Max.)


    OCR Scan     		PDF YTS2222 500mA, YTS2906 YTS2907 SC-59 150mA 150mA 500mA YTS2221 YTS2222

    YTS2222A

    Abstract: transistor marking 1p Z
    Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage


    OCR Scan     		PDF 500mA YTS2222A 300MHz YTS2907A. 500mA, Ta-25 150mA, YTS2222A transistor marking 1p Z

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    ICA10

    Abstract: YTS2907A 150fps
    Text: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS YTS2907A FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND +Q5 Z5-(X3 COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1— -500mA . High Transition Frequency


    OCR Scan     		PDF YTS2907A -500mA fT-200MHz YTS2222A -500mA, -50mA Ta-25 -15mA 500mA, -50mA ICA10 YTS2907A 150fps

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009

    YTS2906A

    Abstract: YTS2221 150PPS
    Text: SILICON PNP EPITAXIAL TYPE YTS2907A Unit in mm FOR GENERAL PURPOSE USE AMPLIFIER APPLICATION, + 0.5 MID1UM-SPEED SW ITCHING A N D A U D IO TO VHF AMPLIFIER 2 .5 - a s APPLICATIONS. + Û 25 i.5 ~ a i5 HO +I tfc5 DC Current Gain Specified : —0.1~ —500mA


    OCR Scan     		PDF YTS2907A --500mA --500mA, --50mA 200MHz YTS2221A, YTS2222A. O-236MOD SC-59 YTS2906A YTS2221 150PPS

    transistor marking MK

    Abstract: YTS2222
    Text: TOSHIBA TRANSISTOR YTS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1~ -500mA . High Transition Frequency : @ Ic— 50mA, fx*200MHz(Min.)


    OCR Scan     		PDF YTS2907 -500mA 200MHz YTS2222 -500mA, -50mA Ta-258C) -10/iA, -10mA, 10/iA, transistor marking MK YTS2222

    2n3904 2n3906

    Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
    Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64


    OCR Scan     		PDF 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2n3904 2n3906 2SC1815 2SA1015 2SC1815 2SA1015

    2n 3904 411

    Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
    Text: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13


    OCR Scan     		PDF 1SV237 1SV239. 1SV257 TA4100F. YTS2222. YTS2222A. YTS2907. YTS2907A. YTS3904. YTS3906. 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DISCRETE/OPTO 45E D ÌQ'msa • TOSHIBA TRANSISTOR 0017=^7 S « T 0 S 4 - YTS2907A SILICON PNP EPITAXIAL TYPE (PCT PROCESS) FOR HIGH SPEED SWITCHING USE Unit in mm +QS Z 5-Q 3 +<Ï2 S DC TO VHF AMPLIFIER APPLICATIONS AND


    OCR Scan     		PDF YTS2907A 500mA 500mA, -50mA YTS2222A 150PFS

    YTS2906

    Abstract: YTS2222 YTS2221
    Text: SILICON PNP EPITAXIAL TYPE YTS2907 Unit in mm FOR GENERAL PURPOSE USE + 0.5 MEDIUM SPEED SWITCHING AND AUDIO TO VHF AMPLIFIER APPLICATION FEATURES: • High DC Current Gain Specified : -0.1 ^-500mA • High Transition Frequency : fT=200KHz Min. @ Ic=-50mA


    OCR Scan     		PDF YTS2907 -500mA 200KHz -50mA -500mA, YTS2221 YTS2222 SC-59 -10pA, YTS2906 YTS2222

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA CD O <0 ro cn o —I O cn x > OVERSEA STANDARD « ic PC mA (mW) VCE Ic (V) (mA) SW Time MAX. Cob f j MIN. VcE(sat) MAX. hFE v CE0 Type No. V CE •c V CB td tr tstg tf (MHz) (V) (mA) (pF) (V) (ns) (ns) (ns) (ns) 5 250/200 20 10 4/4.5 5 35 35 175/175 50/60


    OCR Scan     		PDF YTS3903 YTS3905 YTS3904 YTS3906 YTS4123 YTS2222 YTS2907 YTS2221A YTS2906A YTS2222A

    YTS2222

    Abstract: No abstract text available
    Text: TOSHIBA YTS2907 Transistor Unit in mm Silicon PNP Epitaxial Type For High-Speed Switching Use DC to VHF Amplifier Applications and Complementry Circuitry Features • High DC Current Gain Specified - 0.1 - -500mA • High Transition Frequency - @ lc = -50mA, fT = 200MHz Min.


    OCR Scan     		PDF YTS2907 -500mA -50mA, 200MHz -500mA, -50mA YTS2222

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


    OCR Scan     		PDF 2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846

    TIPI27

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0


    OCR Scan     		PDF OT-23MOD 2N3903 YTS3903 2N3904 YTS3904 2N3905 YTS3905 2N3906 YTS3906 2N4123 TIPI27