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    YTS3904 Search Results

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    Toshiba America Electronic Components YTS3904

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    YTS3904 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    YTS3904 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    YTS3904 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    tl2222a

    Abstract: 2N5381 A5T3904 2sc2720 GG20N 2n3688 mmt3904 sot23 80ng MM3904 BF252
    Text: RF LOW•POWER SILICON NPN Item Number Part Number V BR CEO 5 10 UPI2222B PN3947 PN3947 PN3947 BSX32 2N6375 BSR17R 5MBT3904 SOR3904 (A) P2N2222A ~t~~~2A 15 20 25 30 S03904 TL2222A TMPT3904 BSS67 BSS67R TP5381 A5T3904 EN3904 EN3_904 MMBT3904 MMT3904 MM3904 MM3904


    Original     		PDF UPI2222B PN3947 BSX32 2N6375 BSR17R 5MBT3904 SOR3904 P2N2222A tl2222a 2N5381 A5T3904 2sc2720 GG20N 2n3688 mmt3904 sot23 80ng MM3904 BF252

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    transistor E 13009

    Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
    Text: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009

    Untitled

    Abstract: No abstract text available
    Text: TO S H I B A HSE D DISCRETE/OPTO • T Q T 7 E 5 D DDlflODD T « T O S M TOSHIBA TRANSISTOR - YTS3904 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Carrent : IcEV“50nA(Max.), IgEV^SOnAiMax.)


    OCR Scan     		PDF YTS3904 SC-59 f-10Hz-15 300ne ln1N916

    YTS3904

    Abstract: IC-10PA
    Text: YTS3904 SILICON NPN EPITAXIAL TYPE FOR GENERAL PURPOSE USE S WI TCH ING AND A MP LIF IER APPLICATIONS. FEATURES: • L o w Leakage Current : l £ g y = 5 0 n A M a x . , I g g y = 5 0 n A ( M a x . ) @ V C E =30V, V b e =3V • Excellent DC Current Gain Line a r i t y


    OCR Scan     		PDF YTS3904 YXS3906 100MHz 1N916. 20/is YTS3904 IC-10PA

    TIPI27

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO! ' ÌQ d | ^7250 0GlbLH3 5 | ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0


    OCR Scan     		PDF OT-23MOD 2N3903 YTS3903 2N3904 YTS3904 2N3905 YTS3905 2N3906 YTS3906 2N4123 TIPI27

    YTS3904

    Abstract: YTS3906
    Text: TOSHIBA TRANSISTOR YTS3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER Unit in mm APPLICATIONS. FEATURES : . Low Leakage Current : !cEV*50nA(Max.), lBEV*50aA(Max.) <3 V c e -30V, V BE-3V . Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS3904 YTS3906 SC-59 Ta-25 VCE-20V, IC-10mA f-100MHz 20per* YTS3904 YTS3906

    YTS3904

    Abstract: No abstract text available
    Text: TO SHIBA YTS3904 Transistor Unit in mm Silicon NPN Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - Iqev = 50nA Max. , Ibev = 50nA (Max.) - @ VCE = 30V, VBE = 3V • Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS3904 YTS3906 300ns 1C19V YTS3904

    TRANSISTOR Marking XB PNP

    Abstract: YTS3906
    Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS3906 -50mA, YTS3904 300ne TRANSISTOR Marking XB PNP YTS3906

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA DISCRETE/OPTO 45E D • TGTTESD 001ÔD02 3 «TOSM TOSHIBA V m Q f l f i SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 'T FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES:


    OCR Scan     		PDF ICEV--50nA e--30V, -50mA, YTS3904 300ns

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA YTS39Q6 Transistor Unit in mm Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -50nA Max. , Ibev = 50nA (Max.) - @ VCE = -30V, VBE = -3V • Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS39Q6 -50nA -50mA, YTS3904

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    2n 3904 411

    Abstract: 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N
    Text: TOSHIBA Appendix i SV 1 8 6 . 9 1S V 229. 11 1SV237 . 13


    OCR Scan     		PDF 1SV237 1SV239. 1SV257 TA4100F. YTS2222. YTS2222A. YTS2907. YTS2907A. YTS3904. YTS3906. 2n 3904 411 2SB 407 2SK176 Toshiba 2SC3281 K 1113 2sk toshiba TA4100F TOSHIBA 2N

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA CD O <0 ro cn o —I O cn x > OVERSEA STANDARD « ic PC mA (mW) VCE Ic (V) (mA) SW Time MAX. Cob f j MIN. VcE(sat) MAX. hFE v CE0 Type No. V CE •c V CB td tr tstg tf (MHz) (V) (mA) (pF) (V) (ns) (ns) (ns) (ns) 5 250/200 20 10 4/4.5 5 35 35 175/175 50/60


    OCR Scan     		PDF YTS3903 YTS3905 YTS3904 YTS3906 YTS4123 YTS2222 YTS2907 YTS2221A YTS2906A YTS2222A

    TRANSISTOR MARKING YB 1L

    Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
    Text: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738


    OCR Scan     		PDF 2SC4841 OT89/SC62) TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846

    2N3904

    Abstract: Z-47 2SA1015 2SK1529 SM12 YTFP150
    Text: ALPHABETICAL INDEX 2N3904 .5 2SJ201 . 97 2N3906 . 9 2SK405 . 100 2N4123 . 13


    OCR Scan     		PDF 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2SJ201 2SK405 2N3904 Z-47 2SA1015 2SK1529 SM12 YTFP150

    YTS2222A

    Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
    Text: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60


    OCR Scan     		PDF UN8231A UN9110 UN9111 UN9113 UN9114 003ax SC-59) YTS2222A YTS2221 SC-59 YTS2222A YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907

    YTS3906

    Abstract: YTS3904
    Text: SILICON PNP EPITAXIAL TYPE YTS3906 FOR GENERAL PURPOSE USE S W I TCH ING A N D A M PL IFI ER APPLICATIONS. FEATURES: • Low L e a k a g e Current : I C E V = - 5 0 n A M a x . , lBEV=50nA(Max.) @ V C E =-30V, V b e =3V • Excellent DC Current Gain Line a r i t y


    OCR Scan     		PDF YTS3906 -50mA, YTS3904 -10mA 100MHz -106V YTS3906 YTS3904