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    HY5116100B

    Abstract: 10k52 1AD41-00-MAY95 1AD41
    Text: -HYUNDAI Y5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H Y5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B Y5116100B 5116100B 1AD41-00-MAY95 HY5116100BJ HY5116100BSLJ HY5116100BT HY5116100BSLT 10k52 1AD41-00-MAY95 1AD41

    5118164

    Abstract: Hyundai 5118164 hy5116164csljc
    Text: ’ « Y U H P W I * > H Y 5118164C,H Y5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		PDF 1Mx16, 16-bit A0-A11) DQ0-DQ15) 5118164 Hyundai 5118164 hy5116164csljc

    HY5116100B

    Abstract: No abstract text available
    Text: Y5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The Y5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. Y5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM564200 X-Series 2M X 64-bit CMOS ORAM MODULE D E S C R IP T IO N The HYM564200 is a 2M x 64-bit Fast page m ode CMOS DRAM m odule consisting o f eight Y5116160 in 42/42 pin SOJ, tw o 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board.


    OCR Scan     		PDF HYM564200 64-bit HY5116160 16-bit HYM564200XG/SLXG A0-A11 RAS0-RA53) DQ0-DQ63)

    rau2

    Abstract: 1A011
    Text: Y5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The Y5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The Y5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116160 16-bit 16-bit. Y5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC rau2 1A011

    hy5116100

    Abstract: No abstract text available
    Text: »HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1 -bit CMOS DRAM DESCRIPTION The H Y 5 1 1 6 1 0 0 A isth e new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The Y5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51161OOA HY5116100A HY51161 C1801 4b750Ã 1AD19-10-MAYÃ HY5116100AJ HY51161OOASLJ hy5116100

    ABO-20 L

    Abstract: 1mx1 DRAM
    Text: H Y 5 1 1 6 1 0 0 • H Y U N D A I S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The Y5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. Ttie Y5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116100 1AD01-10-MAY94 0005AB7 HY5116100JC HY5116100LJC HY5116100TC ABO-20 L 1mx1 DRAM

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 8 1 6 0 B ,H Y 5 1 1 6 1 6 0 B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF 1Mx16, 16-bit 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: H YU N D A I HY51V16100A Series 16M X 1-blt CMOS ORAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16100A Vl6100Ato 1AD21-00-MAY94 HY51V16100AJ HY51V161OOASLJ HY51V16100AT HY51V161OOASLT

    HY5118160B

    Abstract: No abstract text available
    Text: . « y u n p i n " * HY5118160B.Y5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1 ,0 4 8,57 6 x 16-bit configuration with Fast P age mode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5118160B HY5116160B 1Mx16, 16-bit

    Untitled

    Abstract: No abstract text available
    Text: Y5116100B «HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 16M b it d y n a m ic R A M org a n iz e d 16 ,777 ,216 x 1-bit c o n fig u ra tio n w ith F a s t P age m o d e C M O S D R A M s. F a s t P a g e m o d e o ffe rs high


    OCR Scan     		PDF

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s 16Mx1-btt C M O S D R A M DESCRIPTION "The Y5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The Y5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF 16Mx1-btt HY5116100 1AD01-10-MAY94 HY5116100JC HY5116100UC HY5116100TC HY5116100LTC

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI Y51161OOA Series 16M X 1-bit CMOS DRAM DESCRIPTION The Y5116100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The Y5116100A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51161OOA HY5116100A Y51161 24/2S 1AD19-10-MAY95 HY5116100AJ HY5116100ASLJ HY5116100AT

    Hy5118164B

    Abstract: hy51181648 HY5118164C HY5118164
    Text: •HYUNDAI H Y 5 1 1 8 1 6 4 B .H Y 5 1 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process


    OCR Scan     		PDF HY5118164B HY5116164B 1Mx16, 16-bit A0-A11) DQ0-DQ15) 1Mx16 hy51181648 HY5118164C HY5118164