HY5116100B
Abstract: 10k52 1AD41-00-MAY95 1AD41
Text: -HYUNDAI 5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H 5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116100B
Y5116100B
5116100B
1AD41-00-MAY95
HY5116100BJ
HY5116100BSLJ
HY5116100BT
HY5116100BSLT
10k52
1AD41-00-MAY95
1AD41
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Untitled
Abstract: No abstract text available
Text: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA 5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,
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TC5116100BSJ-60/70
5116100BS
51161OOBSJ
300mil)
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HY5116100B
Abstract: 1AD41-00-MAY95 HY5116100
Text: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 5116100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide
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HY5116100B
16Mx1
HY5116100Bis
TheHY5116100B
4b750Ã
300435b
1AD41-00-MAY9S
HY5116100BJ
1AD41-00-MAY95
HY5116100
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
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512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
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Untitled
Abstract: No abstract text available
Text: ADE-203-371 Z 5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory Preliminary Rev. 0.0 Mar. 23, 1994 HITACHI The Hitachi 5116100B is a CMOS dynamic RAM organized 16,777,216-w ord x 1-bit. It employs the most advanced CMOS technology for
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ADE-203-371
216-word
HM5116100B
216-w
HM5116100BS-6
HM5116100BS-7
HM5116100BS-8
HM5116100BTS-7
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Untitled
Abstract: No abstract text available
Text: 5116100B «HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 16M b it d y n a m ic R A M org a n iz e d 16 ,777 ,216 x 1-bit c o n fig u ra tio n w ith F a s t P age m o d e C M O S D R A M s. F a s t P a g e m o d e o ffe rs high
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Untitled
Abstract: No abstract text available
Text: 5116100B Series 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI ADE-203-371A Z Rev. 1.0 Nov. 10, 1995 Description The Hitachi 5116100B is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced CMOS technology for high performance and low power. The 5116100B offers Fast Page
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HM5116100B
216-word
ADE-203-371A
mW/385
mW/358
16-bit
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